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42 条记录 (耗时 0.026 秒)

    NEAR-FIELD INTERACTION CONTROL ELEMENT
    11.
    发明申请
    NEAR-FIELD INTERACTION CONTROL ELEMENT 有权
    近场互动控制元件

    公开(公告)号：US20080107371A1

    公开(公告)日：2008-05-08

    申请号：US11690989

    申请日：2007-03-26

    申请人： Kenji Todori ,  Miho Maruyama ,  Reiko Yoshimura ,  Fumihiko Aiga ,  Tsukasa Tada ,  Ko Yamada

    发明人： Kenji Todori ,  Miho Maruyama ,  Reiko Yoshimura ,  Fumihiko Aiga ,  Tsukasa Tada ,  Ko Yamada

    IPC分类号： G02F1/035

    CPC分类号： G02F1/0118 ,  B82Y20/00 ,  G02F1/0333 ,  G02F2202/36 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/901

    摘要： A near-field interaction control element includes a near-field optical waveguide containing particles formed of a metal, a metal anion or a metal cation with a diameter of 0.5 nm or more and 3 nm or less and a dielectric constant of −2.5 or more and −1.5 or less, an electron injector/discharger injecting or discharging an electron into or from the particles contained in the near-field optical waveguide to vary a dielectric constant of the near-field optical waveguide, a near-field light introducing part introducing near-field light into the near-field optical waveguide, and a near-field light emitting part emitting the near-field light having guided through the near-field optical waveguide.

    摘要翻译： 近场相互作用控制元件包括包含由金属，金属阴离子或金属阳离子形成的颗粒的近场光波导，其直径为0.5nm以上且3nm以下，介电常数为-2.5以上 和-1.5或更小的电子注入器/放电器，将电子注入或放出包含在近场光波导中的粒子，以改变近场光波导的介电常数;近场光引入部分引入 近场光入射到近场光波导中的近场光，以及发射已经引导通过近场光波导的近场光的近场发光部。

    Refractive index variable element
    12.
    发明申请
    Refractive index variable element 有权
    折射率可变元件

    公开(公告)号：US20060279833A1

    公开(公告)日：2006-12-14

    申请号：US11441092

    申请日：2006-05-26

    申请人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    发明人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    IPC分类号： G02F1/00

    CPC分类号： G02F1/0018 ,  B82Y10/00 ,  B82Y20/00 ,  G02F2001/01791 ,  G02F2202/13 ,  Y10S977/774 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/932

    摘要： A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

    摘要翻译： 折射率可变元件具有包括固体基质和分散在固体基质中的一种或多种类型的量子点并且具有离散的占据和未占据的电子能级的结构。 量子点执行在用光照射时产生一对正电荷和负电荷的功能，捕获正电荷的功能以及捕获负电荷的功能。 执行捕获负电荷的功能的量子点从由带负电的正电荷和带正电的原子的组合组成的组中选择，其中带正电的原子的最外面的电子壳完全充满电子，使得附加 当接收电子时，电子占据上部不同的壳轨道，金属螯合络合物，茂金属及其衍生物。

    Refractive index changing apparatus and method
    13.
    发明申请
    Refractive index changing apparatus and method 有权
    折射率变换装置及方法

    公开(公告)号：US20060065902A1

    公开(公告)日：2006-03-30

    申请号：US11237783

    申请日：2005-09-29

    申请人： Kenji Todori ,  Reiko Yoshimura ,  Fumihiko Aiga ,  Tsukasa Tada

    发明人： Kenji Todori ,  Reiko Yoshimura ,  Fumihiko Aiga ,  Tsukasa Tada

    IPC分类号： H01L33/00 ,  G02B26/02

    CPC分类号： G02F1/01716 ,  B82Y20/00 ,  G02F2001/0151 ,  G02F2001/01791 ,  G02F2203/50 ,  Y10S977/774

    摘要： Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure unit formed of dielectric which surrounds the quantum dots, injection unit configured to inject an electron into position of the ground level in each quantum dot via the barrier structure unit, utilizing tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit, source which emits, to the quantum dots, first light beam having first energy for exciting electrons from the ground level to the excited level, and source which emits, to the quantum dots, second light beam having second energy different from the first energy.

    摘要翻译： 折射率变换装置包括量子点，每个量子点具有包括地面电平和激发电平的离散能级，即使在量子点上提供了由于环境温度导致的能量的激发电平高于地电平，由电介质形成的阻挡结构单元围绕 量子点，注入单元，被配置为通过阻挡结构单元将电子注入每个量子点中的地面位置，利用隧道效应，或防止电子注入该位置，注入电子或防止注入 通过改变喷射单元的能级来控制电子的电子，源发射到量子点的具有第一能量的第一光束，用于将电子从地电平激发到激发电平;以及源向量子点发射第二能量 光束具有与第一能量不同的第二能量。

    Method of producing a metallic nanoparticle inorganic composite, metallic nanoparticle inorganic composite, and plasmon waveguide
    16.
    发明授权
    Method of producing a metallic nanoparticle inorganic composite, metallic nanoparticle inorganic composite, and plasmon waveguide 有权
    制备金属纳米颗粒无机复合材料，金属纳米颗粒无机复合材料和等离子体波导的方法

    公开(公告)号：US08303853B2

    公开(公告)日：2012-11-06

    申请号：US12500691

    申请日：2009-07-10

    申请人： Miho Maruyama ,  Kenji Todori ,  Tsukasa Tada ,  Reiko Yoshimura ,  Yasuyuki Hotta ,  Ko Yamada ,  Masakazu Yamagiwa

    发明人： Miho Maruyama ,  Kenji Todori ,  Tsukasa Tada ,  Reiko Yoshimura ,  Yasuyuki Hotta ,  Ko Yamada ,  Masakazu Yamagiwa

    IPC分类号： H01B1/02 ,  H01B1/08 ,  H01B1/22 ,  B05D3/04

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  C01B33/12 ,  C01G23/00 ,  C01G23/053 ,  Y10T428/24413

    摘要： A method using a chemical synthesis method to produce a metallic nanoparticle inorganic composite having fine metallic nanoparticles that are uniformly dispersed at a high density in a solidified matrix, a metallic nanoparticle inorganic composite, and a plasmon waveguide using this composite are provided. Thus, a method including: preparing a precursor solution, applying the precursor solution onto a substrate, and then hydrolyzing the precursor solution to form an oxide film having fine pores, bringing the oxide film into contact with an acidic aqueous solution of tin chloride to chemically adsorb Sn2+ ions in the fine pores, removing an excess of the Sn2+ ions, bringing the oxide film into contact with an aqueous metal chelate solution to precipitate metallic nanoparticles in the fine pores, and removing an excess of ions of the metal is provided.

    摘要翻译： 提供了一种使用化学合成方法制备具有金属纳米颗粒的金属纳米颗粒无机复合材料，该金属纳米颗粒无机复合材料使用这种复合材料在固化基体，金属纳米颗粒无机复合材料和等离子体波导中均匀分散在高密度下。 因此，一种方法包括：制备前体溶液，将前体溶液施加到基底上，然后水解前体溶液以形成具有细孔的氧化膜，使氧化膜与氯化锡的酸性水溶液接触化学 吸附细孔中的Sn2 +离子，去除过量的Sn2 +离子，使氧化膜与金属螯合溶液接触，使细孔中的金属纳米粒子析出，并除去过量的金属离子。

    METALLIC FINE PARTICLE DISPERSED FILM, AND PROCESS FOR PRODUCING THE SAME
    17.
    发明申请
    METALLIC FINE PARTICLE DISPERSED FILM, AND PROCESS FOR PRODUCING THE SAME 审中-公开
    金属细颗粒分散膜及其制造方法

    公开(公告)号：US20080241473A1

    公开(公告)日：2008-10-02

    申请号：US12026956

    申请日：2008-02-06

    申请人： Miho MARUYAMA ,  Kenji Todori ,  Tsukasa Tada ,  Reiko Yoshimura ,  Ko Yamada

    发明人： Miho MARUYAMA ,  Kenji Todori ,  Tsukasa Tada ,  Reiko Yoshimura ,  Ko Yamada

    IPC分类号： B05D3/10 ,  B05D5/00 ,  B32B5/16 ,  B32B33/00

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02F1/355 ,  Y10T428/24413

    摘要： The present invention is related to a process for producing a metallic fine particle dispersed film which includes metallic fine particles dispersed densely within a silicon oxide layer without aggregation. The process includes hydrolyzing and polycondensing an organosilane to form a silicon oxide layer with hydroxyl and/or alkoxide groups remaining unremoved on its side chains, bringing the silicon oxide layer into contact with an aqueous acidic tin chloride solution, and then bringing the silicon oxide layer into contact with an aqueous metal chelate solution to disperse metallic fine particles in the silicon oxide layer.

    摘要翻译： 本发明涉及一种金属微粒分散膜的制造方法，该金属微粒分散膜包含密度分布在氧化硅层内而不聚集的金属微粒。 该方法包括水解和缩聚有机硅烷以形成氧化硅层，其羟基和/或醇盐基团在其侧链上保持不被除去，使氧化硅层与酸性氯化锡水溶液接触，然后使氧化硅层 与金属螯合水溶液接触以将金属微粒分散在氧化硅层中。