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公开(公告)号：US20050102821A1
公开(公告)日：2005-05-19
申请号：US11013743
申请日：2004-12-17
申请人： Takeo Kagami , Kunihiro Ueda , Kentaro Nagai , Shunji Saruki
发明人： Takeo Kagami , Kunihiro Ueda , Kentaro Nagai , Shunji Saruki
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/3116 , G11B5/3903 , G11B5/40 , G11B5/488 , G11B2005/3996 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要翻译： 制造磁头的方法制造具有底座的磁头和堆叠在基座上并包括磁阻装置的层叠体。 该方法将包括基底和层压板的结构的表面机械抛光到靠近磁记录介质的位置，其中该结构的表面包括层压体的端面，该端面包括该磁阻装置的端面和 基础。 接下来，该方法选择性地蚀刻靠近磁记录介质的结构表面上的第一区域，其中第一区域包括基底的表面，但不包括磁阻装置的端面。 随后，该方法完全蚀刻靠近磁记录介质的结构表面。
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公开(公告)号：US07207100B2
公开(公告)日：2007-04-24
申请号：US11013743
申请日：2004-12-17
申请人： Takeo Kagami , Kunihiro Ueda , Kentaro Nagai , Shunji Saruki
发明人： Takeo Kagami , Kunihiro Ueda , Kentaro Nagai , Shunji Saruki
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/3116 , G11B5/3903 , G11B5/40 , G11B5/488 , G11B2005/3996 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要翻译： 制造磁头的方法制造具有底座的磁头和堆叠在基座上并包括磁阻装置的层叠体。 该方法将包括基底和层压板的结构的表面机械抛光到靠近磁记录介质的位置，其中该结构的表面包括层压体的端面，该端面包括该磁阻装置的端面和 基础。 接下来，该方法选择性地蚀刻靠近磁记录介质的结构表面上的第一区域，其中第一区域包括基底的表面，但不包括磁阻装置的端面。 随后，该方法完全蚀刻靠近磁记录介质的结构表面。
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13.发明授权公开(公告)号：US07898775B2
公开(公告)日：2011-03-01
申请号：US11826290
申请日：2007-07-13
申请人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
发明人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/39
摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.
摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。 两个偏置磁场施加层邻近MR元件的两个侧表面设置。 每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。 第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。
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14.发明申请公开(公告)号：US20080030908A1
公开(公告)日：2008-02-07
申请号：US11812311
申请日：2007-06-18
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译： 公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。 在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层 沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制 偏置层和MR多层结构，以及形成在金属层上的上电极层。
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公开(公告)号：US07950135B2
公开(公告)日：2011-05-31
申请号：US11806518
申请日：2007-05-31
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3967 , Y10T29/49037 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.
摘要翻译： 电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成 在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。
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公开(公告)号：US07768747B2
公开(公告)日：2010-08-03
申请号：US11735730
申请日：2007-04-16
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/11 , G11B5/3163 , G11B5/3912 , Y10T29/49046
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, and an upper magnetic shield layer formed on the MR multi-layered structure. The lower magnetic shield layer consists of a first soft magnetic layer and a second soft magnetic layer laminated on and magnetically connected with the first soft magnetic layer. A part of an upper surface of the first soft magnetic layer outside both side ends in a track-width direction of the MR multi-layered structure is located lower in height than an upper surface within a region where the MR multi-layered structure is formed, of the lower magnetic shield layer. The second soft magnetic layer is formed outside both side ends in a track-width direction of the MR multi-layered structure.
摘要翻译： 薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流在垂直于层压层表面的方向上流动，并且形成在MR上的上磁屏蔽层 多层结构。 下磁屏蔽层由层压在第一软磁层上并与第一软磁层磁连接的第一软磁层和第二软磁层组成。 在MR多层结构的轨道宽度方向上的两侧端部外侧的第一软磁性层的上表面的一部分位于比形成有MR多层结构的区域内的上表面的高度 的下磁屏蔽层。 第二软磁性层形成在MR多层结构的轨道宽度方向的两侧端的外侧。
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17.发明申请公开(公告)号：US20070289122A1
公开(公告)日：2007-12-20
申请号：US11806518
申请日：2007-05-31
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
IPC分类号： G11B5/187
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3967 , Y10T29/49037 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.
摘要翻译： 电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成 在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。
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公开(公告)号：US07784171B2
公开(公告)日：2010-08-31
申请号：US11797603
申请日：2007-05-04
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。
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公开(公告)号：US07436633B2
公开(公告)日：2008-10-14
申请号：US11205072
申请日：2005-08-17
申请人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
发明人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
IPC分类号： G11B5/245
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/31 , G11B5/3912 , G11B5/3967 , G11B5/4826 , G11B2005/3996
摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.
摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。
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20.发明申请公开(公告)号：US20060176618A1
公开(公告)日：2006-08-10
申请号：US11348487
申请日：2006-02-07
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A composite thin-film magnetic head includes a substrate; a first insulation layer laminated on the substrate; an MR read head element formed on the first insulation layer and provided with a lower shield layer, an upper shield layer and an MR layer in which a sense current flows in a direction perpendicular to a surface of the MR layer through the upper shield layer and the lower shield layer; a second insulation layer laminated on the MR read head element; an inductive write head element formed on the second insulation layer and provided with a lower magnetic pole layer, a recording gap layer, an upper magnetic pole layer whose end portion is opposed to an end portion of the lower magnetic pole layer through the recording gap layer and a write coil; and a nonmagnetic conductive layer electrically conducted with the lower shield layer and opposed to the substrate in order to increase substantially countered area between the lower shield layer and the substrate.
摘要翻译： 复合薄膜磁头包括基板; 层叠在所述基板上的第一绝缘层; 形成在第一绝缘层上并具有下屏蔽层，上屏蔽层和MR层的MR读头元件，其中感测电流通过上屏蔽层沿垂直于MR层的表面的方向流动， 下屏蔽层; 层叠在MR读取头元件上的第二绝缘层; 形成在第二绝缘层上并具有下磁极层的感应写头元件，记录间隙层，其上端部通过记录间隙层与下磁极层的端部相对的上磁极层 和一个写入线圈; 以及与下屏蔽层电连接并与基板相对的非磁性导电层，以便增加下屏蔽层和基板之间的基本上反向的面积。
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