摘要:
A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要:
A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要:
A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.
摘要:
An upper metal layer made of a non-magnetic metal is formed as a protection layer on the top surface of a free layer positioned topmost of a magneto-resistive layer constituting a TMR device. An upper electrode, serving additionally as an upper magnetic shield layer, is electrically connected to the free layer through an underlying layer of the upper electrode, and the upper metal layer. The thickness of the upper metal layer is chosen to be 10 nm or more.
摘要:
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.
摘要:
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.
摘要:
A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer. At least a portion of the upper lead layer closer to the upper magnetic shield layer is made of a non-magnetic conductive material.
摘要:
A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer. At least a portion of the upper lead layer closer to the upper magnetic shield layer is made of a non-magnetic conductive material.
摘要:
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.
摘要:
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.