公开(公告)号：US20100078749A1

公开(公告)日：2010-04-01

申请号：US12514898

申请日：2007-11-13

申请人： Masanori Sahara ,  Mitsutaka Takemura ,  Koei Yamamoto

发明人： Masanori Sahara ,  Mitsutaka Takemura ,  Koei Yamamoto

IPC分类号： H01L31/101

CPC分类号： G01C3/085 ,  G01S17/36 ,  G01S17/89 ,  H01L27/1443 ,  H01L27/14618 ,  H01L27/1464 ,  H01L27/14665 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.

摘要翻译： 在范围图像传感器8中，当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时，从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接，以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此，由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外，当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时，彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此，由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。

公开(公告)号：US20080149943A1

公开(公告)日：2008-06-26

申请号：US11645800

申请日：2006-12-27

申请人： Tatsumi Yamanaka ,  Masanori Sahara ,  Hideki Fujiwara

发明人： Tatsumi Yamanaka ,  Masanori Sahara ,  Hideki Fujiwara

IPC分类号： H01L31/06 ,  H01L31/12

CPC分类号： H01L27/14603 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14654

摘要： A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

摘要翻译： 光电二极管阵列PD1包括n型半导体衬底，其一面是要检测的光的入射表面; 多个pn结型感光区域3，形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。 载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。 从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。

公开(公告)号：US06962140B1

公开(公告)日：2005-11-08

申请号：US10656100

申请日：2003-09-08

申请人： Eiji Nakai ,  Naoki Okada ,  Tsunehiro Sato ,  Yoshiyuki Matsumoto ,  Masami Nakao ,  Masanori Sahara ,  Kouji Habu ,  Hiromu Sugano ,  Masaru Yamamoto ,  Tunehiro Mori

发明人： Eiji Nakai ,  Naoki Okada ,  Tsunehiro Sato ,  Yoshiyuki Matsumoto ,  Masami Nakao ,  Masanori Sahara ,  Kouji Habu ,  Hiromu Sugano ,  Masaru Yamamoto ,  Tunehiro Mori

IPC分类号： F02D45/00 ,  F02B3/06 ,  F02D41/14 ,  F02D41/20 ,  F02D41/24 ,  F02D41/38 ,  F02D41/40

CPC分类号： F02D41/402 ,  F02B3/06 ,  F02D41/1498 ,  F02D41/20 ,  F02D41/2438 ,  F02D41/2441 ,  F02D41/2467 ,  F02D2200/1015 ,  Y02T10/44

摘要： A diesel engine control system and control method capable of conducting accurate fuel injection unaffected by variations in injector performance caused by differences among individual injectors or change with aging. The diesel engine control system includes an injector for directly injecting fuel into a combustion chamber of a diesel engine, injection quantity controller for controlling fuel injection quantity by varying a period of electric current supply to the injector, estimator for estimating that an electric current supply period when a prescribed (stable) combustion state is obtained is the current supply period for injecting the amount of fuel required for the prescribed combustion state, and control data correcting device for correcting control data of the injection quantity controller based on the estimated current supply period.

摘要翻译： 一种柴油发动机控制系统和控制方法，其能够进行精确的燃料喷射，不受喷射器性能的变化的影响，由各个喷油器之间的差异引起，或随着老化而变化。 柴油机控制系统包括用于将燃料直接喷射到柴油发动机的燃烧室中的喷射器，用于通过改变对喷射器的电流供应的时间来控制燃料喷射量的喷射量控制器，用于估计电流供应周期 当获得规定的（稳定）燃烧状态时，是用于喷射规定燃烧状态所需的燃料量的电流供给期间，以及基于估计电力供给期间校正喷射量控制器的控制数据的控制数据校正装置。

公开(公告)号：US06392282B1

公开(公告)日：2002-05-21

申请号：US09628446

申请日：2000-07-28

申请人： Masanori Sahara ,  Takashi Suzuki

发明人： Masanori Sahara ,  Takashi Suzuki

IPC分类号： H01L31107

CPC分类号： H01L27/1443 ,  H01L31/02024 ,  H01L31/107

摘要： An APD is provided, said APD having an N-type first buried region (cathode) formed on a P-type substrate, and P-type first, second layer, and fourth semiconductor region (anode) formed thereon. A vertical type PNP transistor is provided, said vertical type PNP transistor having the N-type first buried region formed on the substrate, a P-type first buried region and a P-type second semiconductor layer (collector) formed on the P-type first semiconductor layer, and an N-type second semiconductor region (base) in the P-type second semiconductor layer. A vertical type NPN transistor is provided, said vertical type NPN transistor having an N-type second buried region and an N-type first semiconductor region (collector) in the substrate, and a P-type third semiconductor region (base) in the N-type first semiconductor region. An NMOS is provided in the surface of the P-type second semiconductor layer. A PMOS is provided in the surface of the N-type second semiconductor region.

摘要翻译： 提供了一种APD，所述APD具有形成在P型基板上的N型第一掩埋区域（阴极）和形成在其上的P型第一，第二层和第四半导体区域（阳极）。 提供了垂直型PNP晶体管，所述垂直型PNP晶体管具有形成在衬底上的N型第一掩埋区，P型第一掩埋区和形成在P型上的P型第二半导体层（集电极） 第一半导体层以及P型第二半导体层中的N型第二半导体区域（基极）。 提供了垂直型NPN晶体管，所述垂直型NPN晶体管在衬底中具有N型第二掩埋区域和N型第一半导体区域（集电极），并且N型中的P型第三半导体区域（基极） 型第一半导体区域。 在P型第二半导体层的表面设置NMOS。 在N型第二半导体区域的表面设置PMOS。

公开(公告)号：US5410175A

公开(公告)日：1995-04-25

申请号：US899591

申请日：1992-06-18

申请人： Mikio Kyomasu ,  Masanori Sahara ,  Kenichi Okajima ,  Hiroyasu Nakamura

发明人： Mikio Kyomasu ,  Masanori Sahara ,  Kenichi Okajima ,  Hiroyasu Nakamura

IPC分类号： H01L27/144 ,  H01L27/14

CPC分类号： H01L27/1443

摘要： This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.

摘要翻译： 本发明涉及具有PIN光电二极管和形成在单个半导体（硅））衬底上的n-p-n双极晶体管的单片IC。 在制造这种IC时，重要的是将光电二极管和双极晶体管电隔离。 此外，需要使基板的表面平坦。 根据本发明，通过在硅衬底上形成两个外延层，在层中形成沟槽，并在沟槽中埋入二氧化硅，可以实现上述两个器件之间的器件间隔离。 在根据本发明的单片IC中，布线容量小，并且可以实现高速性能。 在双极晶体管的下方形成p型掩埋层，从而防止双极晶体管和其它器件之间的穿通。 此外，本发明提供了一种用于制造适于制造单片IC的平面型双极晶体管的方法，并且还提供具有新结构的PIN光电二极管。