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19 条记录 (耗时 0.016 秒)

    GAS CONCENTRATION CALCULATION DEVICE, GAS CONCENTRATION MEASUREMENT MODULE, AND LIGHT DETECTOR
    2.
    发明申请
    GAS CONCENTRATION CALCULATION DEVICE, GAS CONCENTRATION MEASUREMENT MODULE, AND LIGHT DETECTOR 审中-公开
    气体浓度计算装置，气体浓度测量模块和光探测器

    公开(公告)号：US20120330568A1

    公开(公告)日：2012-12-27

    申请号：US13578895

    申请日：2011-02-14

    申请人： Toshiyuki Izawa ,  Koei Yamamoto

    发明人： Toshiyuki Izawa ,  Koei Yamamoto

    IPC分类号： G06F19/00 ,  G01J1/04

    CPC分类号： G01N21/3504 ,  G01N21/0303 ,  G01N21/61

    摘要： A gas concentration measuring module (2X) includes a gas cell (10X) configured to form an introduction space (11X) into which a sample gas (50X) is introduced, an infrared light source (21X) disposed at one end of the gas cell (10X), a reference light receiving element (31X) and a signal light receiving element (32X) disposed at the other end of the gas cell (10X) and configured to receive infrared light emitted from the infrared light source (21X), and an inert gas chamber (40X) disposed on an optical path between the infrared light source (21X) and the reference light receiving element (31X) in the introduction space (11X) and in which an inert gas, inert with respect to the infrared light emitted from the infrared light source (21X) is hermetically enclosed. A calculation circuit (3X) calculates a concentration of carbon dioxide in the sample gas (50X) based on a ratio between an energy value of light received by the reference light receiving element (31X) and an energy value of infrared light received by the signal light receiving element (32X) of the gas concentration measuring module (2X).

    摘要翻译： 气体浓度测量模块（2X）包括：气体电池（10X），被配置为形成引入空气（11X），其中引入样品气体（50X）;红外光源（21X），设置在所述气室的一端 （10X），参考光接收元件（31X）和设置在气室（10X）的另一端处的信号光接收元件（32X），并且被配置为接收从红外光源（21X）发射的红外光;以及 设置在导入空间（11X）中的红外线光源（21X）和基准光接收元件（31X）之间的光路上的惰性气体室（40X），其中相对于红外线为惰性的惰性气体 从红外光源（21X）发射的气密密封。 计算电路（3X）基于由参考光接收元件（31X）接收的光的能量值与由信号接收的红外线的能量值之间的比率，计算样品气体（50X）中的二氧化碳浓度 气体浓度测量模块（2X）的光接收元件（32X）。

    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE
    3.
    发明申请
    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
    后置照明固态图像拾取器件

    公开(公告)号：US20120256287A1

    公开(公告)日：2012-10-11

    申请号：US13258696

    申请日：2010-03-23

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L27/148

    CPC分类号： H01L27/1464 ,  H01L27/14818 ,  H01L27/1485

    摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.

    摘要翻译： 在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2， 相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。 此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE
    4.
    发明申请
    BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
    后置照明固态图像拾取器件

    公开(公告)号：US20120038016A1

    公开(公告)日：2012-02-16

    申请号：US13258680

    申请日：2010-03-24

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Yasuhito Miyazaki ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Yasuhito Miyazaki ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L31/0224

    CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14806 ,  H01L31/02363 ,  H01L31/035281

    摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.

    摘要翻译： 在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于 光入射面，光检测面具有不平坦的表面。 通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。 因此，可以通过背照式固态图像拾取装置获得高质量的图像。

    Semiconductor energy detector
    5.
    发明授权
    Semiconductor energy detector 有权
    半导体能量探测器

    公开(公告)号：US06724062B2

    公开(公告)日：2004-04-20

    申请号：US09886110

    申请日：2001-06-22

    申请人： Hiroshi Akahori ,  Hisanori Suzuki ,  Kazuhisa Miyaguchi ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hiroshi Akahori ,  Hisanori Suzuki ,  Kazuhisa Miyaguchi ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L3100

    CPC分类号： H01L27/14812

    摘要： A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

    摘要翻译： 这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形，该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线 以与辅助布线无关的方式辅助补偿传输电压，其中相应的这些布线连接到相应的传输电极，从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题，从而实现预期的电荷转移 高速高效率。

    Semiconductor energy detector having reinforcement
    6.
    发明授权
    Semiconductor energy detector having reinforcement 有权
    具有加强的半导体能量检测器

    公开(公告)号：US06541753B2

    公开(公告)日：2003-04-01

    申请号：US09845204

    申请日：2001-05-01

    申请人： Hiroshi Akahori ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hiroshi Akahori ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L3100

    CPC分类号： H01L27/14856 ,  H01L27/14601 ,  H01L27/1464 ,  H01L27/14806 ,  H01L27/14812

    摘要： A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

    摘要翻译： 形成基板光束1b，以便在背光照射时能够分离膜，以便能够在背照射下检测能量射线，通过抑制膜的变形并防止由于变形等而在检测时的散焦。 该距离被设定为从薄膜的每个区域到基板框架或基板光束足够短，从而降低基板电阻并实现高速读取操作。

    Back-illuminated solid-state image pickup device
    7.
    发明授权
    Back-illuminated solid-state image pickup device 有权
    背照式固态摄像装置

    公开(公告)号：US08624301B2

    公开(公告)日：2014-01-07

    申请号：US13258696

    申请日：2010-03-23

    申请人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Masaharu Muramatsu ,  Koei Yamamoto

    发明人： Hisanori Suzuki ,  Yasuhito Yoneta ,  Masaharu Muramatsu ,  Koei Yamamoto

    IPC分类号： H01L27/148

    CPC分类号： H01L27/1464 ,  H01L27/14818 ,  H01L27/1485

    摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.

    摘要翻译： 在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2， 相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。 此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

    SEMICONDUCTOR LIGHT-DETECTING ELEMENT
    8.
    发明申请
    SEMICONDUCTOR LIGHT-DETECTING ELEMENT 有权
    半导体光检测元件

    公开(公告)号：US20110303999A1

    公开(公告)日：2011-12-15

    申请号：US13147871

    申请日：2010-02-15

    申请人： Akira Sakamoto ,  Takashi Iida ,  Koei Yamamoto ,  Kazuhisa Yamamura ,  Terumasa Nagano

    发明人： Akira Sakamoto ,  Takashi Iida ,  Koei Yamamoto ,  Kazuhisa Yamamura ,  Terumasa Nagano

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n− type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n− type semiconductor substrate 1 is formed on the second principal surface 1b side of the n− type semiconductor substrate 1. After formation of the accumulation layer 11, the n− type semiconductor substrate 1 is subjected to a thermal treatment.

    摘要翻译： 制备的n型半导体衬底1具有彼此相对的第一主表面1a和第二主表面1b，并且具有形成在第一主表面1a侧上的p +型半导体区域3。 在n型半导体衬底1的第二主表面1b中至少与p +型半导体区域3相对的区域用脉冲激光束照射以形成不规则凹凸。在形成不规则凹凸10之后，积累 在n型半导体衬底1的第二主表面1b侧上形成杂质浓度高于n型半导体衬底1的层11。在形成蓄积层11之后，n型半导体衬底1 进行热处理。

    Digital X-ray imaging apparatus
    9.
    发明授权
    Digital X-ray imaging apparatus 失效
    数字X射线成像装置

    公开(公告)号：US5677940A

    公开(公告)日：1997-10-14

    申请号：US618991

    申请日：1996-03-20

    申请人： Masakazu Suzuki ,  Keisuke Mori ,  Akifumi Tachibana ,  Kazunari Matoba ,  Koei Yamamoto ,  Seiichiro Mizuno

    发明人： Masakazu Suzuki ,  Keisuke Mori ,  Akifumi Tachibana ,  Kazunari Matoba ,  Koei Yamamoto ,  Seiichiro Mizuno

    IPC分类号： A61B6/00 ,  A61B6/06 ,  A61B6/14 ,  H04N5/32

    CPC分类号： H04N5/32 ,  A61B6/14

    摘要： A digital X-ray imaging apparatus comprises an X-ray generator 6 for generating X-rays toward a subject, an X-ray imaging device 7 for detecting an image of X-rays having passed through the subject, a swivel member 4 and a horizontal movement means 8 provided with the X-ray generator 6 and the X-ray imaging device 7 opposed to each other to relatively move the X-ray generator 6 and the X-ray imaging device 7 with respect to the subject, a CPU 21 for producing a tomographic image in accordance with an imaging signal from the X-ray imaging device 7, frame memories and an image display unit 26 for displaying the tomographic image. The X-ray imaging device 7 includes a MOS image sensor having a plurality of two-dimensional light-receiving pixels. With this configuration, a tomographic image along a given tomographic plane can be produced by a signal X-ray imaging operation, and the imaging sensitivity of the digital X-ray imaging apparatus can be enhanced.

    摘要翻译： 数字X射线成像装置包括用于向被检体产生X射线的X射线发生器6，用于检测穿过被检体的X射线的图像的X射线成像装置7，旋转构件4和 设置有彼此相对的X射线发生器6和X射线摄像装置7的相对于被摄体使X射线发生器6和X射线摄像装置7相对移动的水平移动机构8，CPU21 用于根据来自X射线成像装置7的成像信号，帧存储器和用于显示断层图像的图像显示单元26产生断层图像。 X射线成像装置7包括具有多个二维光接收像素的MOS图像传感器。 利用这种配置，可以通过信号X射线成像操作来产生沿着给定的断层摄影平面的断层图像，并且可以提高数字X射线成像装置的成像灵敏度。