公开(公告)号：US08466061B2

公开(公告)日：2013-06-18

申请号：US12888761

申请日：2010-09-23

申请人： Stefan Kolb ,  Bernhard Winkler ,  Ivo Rangelow ,  Hans-Olof Blom ,  Johan Bjurstroem

发明人： Stefan Kolb ,  Bernhard Winkler ,  Ivo Rangelow ,  Hans-Olof Blom ,  Johan Bjurstroem

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

摘要翻译： 一种用于在半导体元件中形成通孔的方法包括提供集成在其主侧上的具有电子电路的半导体元件。 半导体元件还包括蚀刻停止层和导电区域，其中导电区域设置在半导体元件的蚀刻停止层和主侧之间。 该方法还包括从半导体元件的与半导体元件的主侧相反的背面选择性地蚀刻穿通通孔到蚀刻停止层，并且至少部分去除蚀刻停止层，使得导电区域暴露于 背面并且至少部分地用导电材料填充通孔，其中导电材料与半导体元件电隔离。

公开(公告)号：US20120074570A1

公开(公告)日：2012-03-29

申请号：US12888761

申请日：2010-09-23

申请人： Stefan Kolb ,  Bernhard Winkler ,  Ivo Rangelow ,  Hans-Olof Blom ,  Johan Bjurstroem

发明人： Stefan Kolb ,  Bernhard Winkler ,  Ivo Rangelow ,  Hans-Olof Blom ,  Johan Bjurstroem

IPC分类号： H01L23/50 ,  H01L21/62

CPC分类号： H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

摘要翻译： 一种用于在半导体元件中形成通孔的方法包括提供集成在其主侧上的具有电子电路的半导体元件。 半导体元件还包括蚀刻停止层和导电区域，其中导电区域设置在半导体元件的蚀刻停止层和主侧之间。 该方法还包括从半导体元件的与半导体元件的主侧相反的背面选择性地蚀刻穿通通孔到蚀刻停止层，并且至少部分去除蚀刻停止层，使得导电区域暴露于 背面并且至少部分地用导电材料填充通孔，其中导电材料与半导体元件电隔离。

公开(公告)号：US20110219635A1

公开(公告)日：2011-09-15

申请号：US13102469

申请日：2011-05-06

申请人： Ivo Rangelow

发明人： Ivo Rangelow

IPC分类号： G01D21/00

CPC分类号： G03F9/7061 ,  B29C64/135 ,  B82Y10/00 ,  G01N23/046 ,  G01Q20/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q60/34 ,  G01Q70/06 ,  G01Q80/00 ,  G03F9/7038 ,  G03F9/7042 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49131 ,  Y10T29/49133 ,  Y10T29/49744 ,  Y10T29/49778 ,  Y10T29/53261 ,  Y10T29/53265

摘要： A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

摘要翻译： 描述了用于使第一制品相对于第二制品对准的方法和装置，例如用于使纳米压印模板与半导体晶片对准。 该方法包括以下步骤：为所述第二制品提供至少一个相对于其固定的柔性结构，至少提供一个点，提供第一制品，其上具有至少一个表面浮雕标记，提供检测器，用于测量柔性结构与 与所述相互作用相关的表面浮雕标记和产生检测器信号，借助于检测器的识别来识别柔性结构的位置，从而相对于表面浮雕标记信号第二制品的位置，并产生第一和第二物品之间的相对运动 以实现由表面浮雕标记限定的第一和第二物品之间的期望对准。 在该方法和装置中，柔性结构与表面浮雕标记接触。

公开(公告)号：US07946029B2

公开(公告)日：2011-05-24

申请号：US11572046

申请日：2005-07-14

申请人： Ivo Rangelow

发明人： Ivo Rangelow

IPC分类号： H01R43/00

CPC分类号： G03F9/7061 ,  B29C64/135 ,  B82Y10/00 ,  G01N23/046 ,  G01Q20/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q60/34 ,  G01Q70/06 ,  G01Q80/00 ,  G03F9/7038 ,  G03F9/7042 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49131 ,  Y10T29/49133 ,  Y10T29/49744 ,  Y10T29/49778 ,  Y10T29/53261 ,  Y10T29/53265

摘要： A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

摘要翻译： 描述了用于使第一制品相对于第二制品对准的方法和装置，例如用于使纳米压印模板与半导体晶片对准。 该方法包括以下步骤：为所述第二制品提供至少一个相对于其固定的柔性结构，至少提供一个点，提供第一制品，其上具有至少一个表面浮雕标记，提供检测器，用于测量柔性结构与 与所述相互作用相关的表面浮雕标记和产生检测器信号，借助于检测器的识别识别柔性结构的位置，从而相对于表面浮雕标记信号第二制品的位置，并产生第一和第二物品之间的相对运动 以实现由表面浮雕标记限定的第一和第二物品之间的期望对准。 在该方法和装置中，柔性结构与表面浮雕标记接触。

公开(公告)号：US20090213900A1

公开(公告)日：2009-08-27

申请号：US11813308

申请日：2006-01-04

申请人： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

发明人： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

IPC分类号： G01K5/00

CPC分类号： G01J5/40 ,  B81B3/0018 ,  B81B2201/0278 ,  G01J5/44

摘要： A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

摘要翻译： 公开了一种具有在温度变化影响下可变形的装置（3）的微系统部件。 该装置包括具有不同热膨胀系数和不同热导率的至少一个第一（4,5）和第二（8）元件。 元件（4,5; 8）在物理上是分开的并且彼此连接并且连接，使得装置（3）呈现取决于温度的弯曲状态。

公开(公告)号：US20070015371A1

公开(公告)日：2007-01-18

申请号：US11421958

申请日：2006-06-02

申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

IPC分类号： C03C25/68 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/30655

摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制是通过小心地控制氟化物存在与慢化剂气体如CH 4，并使用CF 2 SO 2源控制钝化速率和化学计量来实现的。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。

公开(公告)号：US20050225011A1

公开(公告)日：2005-10-13

申请号：US10508478

申请日：2003-03-14

申请人： Ivo Rangelow ,  Tzwetan Ivanov ,  Peter Hudek ,  Olaf Fortagne

发明人： Ivo Rangelow ,  Tzwetan Ivanov ,  Peter Hudek ,  Olaf Fortagne

IPC分类号： G01Q80/00 ,  G11B9/00 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/3174 ,  G01Q80/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J37/3177

摘要： The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.

摘要翻译： 本发明涉及无掩模微光刻的装置和方法。 几个微结构的悬臂（2）布置在阵列（26）中，并且致动器集成在阵列（26）的每个悬臂（2）中。 提供电源和控制单元（24），所述单元调整悬臂（6）相对于将通过适当电压构造的表面（4）的距离。 针（6）的每一点连接到所述电源和控制单元（24）。 为了实现本发明的方法，具有悬臂的阵列（26）与每个表面（6）相连接的表面（4）与表面（4）接触，以使结构的点 针（6）布置成靠近要被构造的表面（4）。