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    Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
    13.
    发明授权
    Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator 有权
    衬底安装的体声波谐振器的腔体跨越底部电极

    公开(公告)号：US06384697B1

    公开(公告)日：2002-05-07

    申请号：US09566868

    申请日：2000-05-08

    申请人： Richard C. Ruby

    发明人： Richard C. Ruby

    IPC分类号： H03H900

    CPC分类号： H03H9/587 ,  H03H3/02 ,  H03H3/04 ,  H03H9/173 ,  H03H9/585

    摘要： A filter formed of acoustic resonators, where each resonator has its own cavity and a bottom electrode that spans the entirety of the cavity, so that the bottom electrode has an unsupported interior region surrounded by supported peripheral regions. In the preferred embodiment, the cavity is formed by etching a depression into the substrate, filling the depression with a sacrificial material, depositing the piezoelectric and electrode layers that define an FBAR or SBAR, and then removing the sacrificial material from the depression. Also in the preferred embodiment, the sacrificial material is removed via release holes that are limited to the periphery of the depression. Preferably, the bottom electrode is the only electrode that spans the cavity, thereby limiting the formation of parasitic FBARs or SBARs. In one embodiment, the bottom electrode includes a serpentine edge that leaves a portion of one side of the cavity free of overlap by the bottom electrode, so that a top electrode may overlap this portion. Thus, the top and bottom electrodes can overlap the same side without sandwiching the piezoelectric layer outside of the unsupported interior region.

    摘要翻译： 由声谐振器形成的滤波器，其中每个谐振器具有其自身的空腔和跨越整个空腔的底部电极，使得底部电极具有被支撑的周边区域包围的无支撑的内部区域。 在优选实施例中，通过将凹陷蚀刻到基板中，用牺牲材料填充凹陷，沉积限定FBAR或SBAR的压电层和电极层，然后从凹陷中去除牺牲材料来形成空腔。 同样在优选实施例中，通过限制在凹陷周边的释放孔去除牺牲材料。 优选地，底部电极是跨越空腔的唯一电极，从而限制寄生FBAR或SBAR的形成。 在一个实施例中，底部电极包括使空腔的一侧的一部分离开由底部电极重叠的蛇形边缘，使得顶部电极可能与该部分重叠。 因此，顶部和底部电极可以重叠在同一侧，而不将压电层夹在未支撑的内部区域之外。

    Bonded wafer structure and method of fabrication
    15.
    发明授权
    Bonded wafer structure and method of fabrication 失效
    粘合晶片结构和制造方法

    公开(公告)号：US08102044B2

    公开(公告)日：2012-01-24

    申请号：US12254536

    申请日：2008-10-20

    申请人： Richard C. Ruby ,  James P. Roland ,  Frank S. Geefay

    发明人： Richard C. Ruby ,  James P. Roland ,  Frank S. Geefay

    IPC分类号： H01L23/12 ,  H01L21/00

    CPC分类号： H03H9/0547 ,  B81B2201/0271 ,  B81C1/00333 ,  B81C2203/0118 ,  B81C2203/032 ,  H01L21/187 ,  H01L23/10 ,  H01L2924/0002 ,  H03H9/1014 ,  H01L2924/00

    摘要： A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

    摘要翻译： 包装电子器件的方法包括提供第一晶片并提供第二晶片。 该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。 该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。 还描述了接合晶片结构。

    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS
    17.
    发明申请
    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS 审中-公开
    制造垂直分离式声学滤波器和谐振器的方法

    公开(公告)号：US20110047783A1

    公开(公告)日：2011-03-03

    申请号：US12942375

    申请日：2010-11-09

    申请人： Richard C. Ruby ,  John D. Larson, III

    发明人： Richard C. Ruby ,  John D. Larson, III

    IPC分类号： H04R31/00

    CPC分类号： H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    摘要翻译： 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Film acoustically-coupled transformer
    20.
    发明授权
    Film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号：US07391285B2

    公开(公告)日：2008-06-24

    申请号：US10965637

    申请日：2004-10-13

    申请人： John D. Larson, III ,  Richard C. Ruby ,  Stephen L. Ellis

    发明人： John D. Larson, III ,  Richard C. Ruby ,  Stephen L. Ellis

    IPC分类号： H03H9/54

    CPC分类号： H03H9/605 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    摘要翻译： 薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。 一些实施例另外电平衡。