-
公开(公告)号：US06424237B1
公开(公告)日：2002-07-23
申请号：US09746525
申请日：2000-12-21
IPC分类号： H03H915
CPC分类号： H03H9/173 , H03H9/0211 , H03H9/02118 , H03H9/132 , Y10T29/42
摘要： A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.
摘要翻译： 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极，压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方，第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘，该边缘与凹陷的对应边缘偏移第二距离，以限定它们之间的第二区域。 由于位于两个区域的不同材料，第一和第二区域具有不同的阻抗。 此外，第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长，使得区域边缘的反射构造地干扰以最大化谐振器的反射率。
-
2.发明授权Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄体声波谐振器（FBAR）的方法公开(公告)号：US06787048B2
公开(公告)日：2004-09-07
申请号：US09799202
申请日：2001-03-05
IPC分类号： H01B1300
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , H04R17/10
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.
摘要翻译： 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过在底部电极层上制造底部电极层和压电（PZ）层，在衬底上制造谐振器。 部分蚀刻PZ层的选定部分。 然后，在PZ层的选定部分上制造顶部电极。
-
3.发明授权Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method 有权在单个基板上制造具有不同频率的薄膜体声波谐振器（FBARS）的方法和体现该方法的装置的方法公开(公告)号：US06617249B2
公开(公告)日：2003-09-09
申请号：US09799148
申请日：2001-03-05
IPC分类号： H01L21302
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10S438/926 , Y10S438/94 , Y10S438/942 , Y10S438/97 , Y10S438/976
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译： 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过引入质量负载顶部电极层在基板上制造FBAR。 对于具有多个谐振器的衬底，仅为选定的谐振器引入顶部质量负载电极层，以在同一衬底上提供具有不同谐振频率的谐振器。
-
公开(公告)号：US06566979B2
公开(公告)日：2003-05-20
申请号：US09799153
申请日：2001-03-05
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.
-
公开(公告)号：US06262637B1
公开(公告)日：2001-07-17
申请号：US09324618
申请日：1999-06-02
IPC分类号： H03H954
摘要： An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
摘要翻译： 一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。
-
6.发明授权Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄膜体声共振器（FBAR）的方法公开(公告)号：US06874211B2
公开(公告)日：2005-04-05
申请号：US09799205
申请日：2001-03-05
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译： 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过减少从顶部电极层的质量而在衬底上制造FBAR。 对于具有多个谐振器的衬底，仅从所选择的谐振器减小质量，以在同一衬底上提供具有不同谐振频率的谐振器。
-
公开(公告)号：US06483229B2
公开(公告)日：2002-11-19
申请号：US09799149
申请日：2001-03-05
IPC分类号： H01L4104
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by mass loading piezoelectric (PZ) layer between two electrodes. For a substrate having multiple resonators, only selected resonator is mass loaded to provide resonators having different resonance frequencies on the same substrate.
-
8.发明授权Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method 有权用于产生不同频率的谐振器的薄膜体声共振器（FBAR）的质量加载方法和体现该方法的装置公开(公告)号：US06469597B2
公开(公告)日：2002-10-22
申请号：US09799204
申请日：2001-03-05
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译： 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过向底部电极层引入质量负载电极，在基板上制造FBAR。 对于具有多个谐振器的基板，仅为所选择的谐振器引入质量负载底部电极，以在同一基板上提供具有不同谐振频率的谐振器。
-
公开(公告)号：US07427819B2
公开(公告)日：2008-09-23
申请号：US11073345
申请日：2005-03-04
申请人： Storrs T. Hoen , Mark A. Unkrich , William R. Trutna , John D. Larson, III , Richard C Ruby , Graham M. Flower , Annette Grot
发明人： Storrs T. Hoen , Mark A. Unkrich , William R. Trutna , John D. Larson, III , Richard C Ruby , Graham M. Flower , Annette Grot
CPC分类号： G01P15/097 , G01L1/165
摘要： An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.
摘要翻译： 一种用于测量采用具有运动板的膜 - 体声波谐振器的目标环境变量（TEV）的装置和方法。 膜 - 体声波谐振器（FBAR）包括形成在FBAR晶片和表面中的声反射器。 第一电极形成在声反射体的表面上并具有表面。 在第一电极的表面上形成压电层并具有表面。 第二电极形成在压电层的表面上。 运动板相对于第二电极的表面以预定距离悬挂在空间中，并且电容耦合到FBAR。
-
公开(公告)号：US07312675B2
公开(公告)日：2007-12-25
申请号：US11373355
申请日：2006-03-09
IPC分类号： H03H9/54
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
摘要翻译： 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。
-
-
-
-
-
-
-
-
-
搜索结果
63 条记录 (耗时 0.025 秒)
