Vertically separated acoustic filters and resonators
    5.
    发明授权
    Vertically separated acoustic filters and resonators 失效
    垂直分离的声学滤波器和谐振器

    公开(公告)号:US07563475B2

    公开(公告)日:2009-07-21

    申请号:US11203003

    申请日:2005-08-11

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Controlled effective coupling coefficients for film bulk acoustic resonators
    7.
    发明授权
    Controlled effective coupling coefficients for film bulk acoustic resonators 有权
    薄膜体声共振器的受控有效耦合系数

    公开(公告)号:US06472954B1

    公开(公告)日:2002-10-29

    申请号:US09841234

    申请日:2001-04-23

    Abstract: In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.

    Abstract translation: 在声谐振器阵列中,分别对第一和第二滤波器的有效耦合系数进行定制,以实现期望的频率响应。 在双工器实施例中,发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。 在一个实施例中,通过改变压电层的厚度与电极层的总厚度之比来实现系数的调整。 例如,发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。 在另一个实施例中,通过与滤波器内的声谐振器并联形成电容器来实现系数调整,有效耦合系数将被降低。 优选地,电容器由用于制造膜体声波谐振器(FBAR)的相同材料形成。 可以通过在电容器上沉积金属层来对电容器进行质量负载以改变其频率。 或者,可以通过将电容器直接形成在基板上来提供质量负载。

    Bulk acoustic wave resonator with improved lateral mode suppression
    8.
    发明授权
    Bulk acoustic wave resonator with improved lateral mode suppression 有权
    具有改进的横向模式抑制的体声波谐振器

    公开(公告)号:US06215375B1

    公开(公告)日:2001-04-10

    申请号:US09282082

    申请日:1999-03-30

    CPC classification number: H03H9/174 H03H9/132 H03H9/585

    Abstract: A bulk acoustic wave device that provides a high spectral purity, high Q, resonator in the radio frequency and microwave frequency ranges. Such resonators may be coupled together to form filters or other frequency selective devices. The bulk acoustical wave filter is constructed from a piezoelectric (PZ) material having a first surface and a second surface and first and second electrodes. The first electrode includes an electrically conducting layer on the first surface, and the second electrode includes an electrically conducting layer on the second surface. The first electrode overlies at least a portion of the second electrode, the portion of the first electrode that overlies the second electrode has a periphery which is a non-rectangular, irregular polygon. In the preferred embodiment of the present invention, the periphery is a three-sided, four-sided, or n-sided irregular polygon in which no two sides are parallel to one another.

    Abstract translation: 一种在射频和微波频率范围内提供高光谱纯度,高Q谐振器的体声波器件。 这样的谐振器可以耦合在一起以形成滤波器或其它频率选择装置。 本体声波滤波器由具有第一表面和第二表面以及第一和第二电极的压电(PZ)材料构成。 第一电极在第一表面上包括导电层,第二电极在第二表面上包括导电层。 第一电极覆盖第二电极的至少一部分,第一电极的覆盖第二电极的部分具有非矩形的不规则多边形的周边。 在本发明的优选实施例中,周边是没有两个侧面彼此平行的三面,四面或者n面的不规则多边形。

    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS
    9.
    发明申请
    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS 审中-公开
    制造垂直分离式声学滤波器和谐振器的方法

    公开(公告)号:US20110047783A1

    公开(公告)日:2011-03-03

    申请号:US12942375

    申请日:2010-11-09

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Film acoustically-coupled transformer
    10.
    发明授权
    Film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号:US07391285B2

    公开(公告)日:2008-06-24

    申请号:US10965637

    申请日:2004-10-13

    Abstract: One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    Abstract translation: 薄膜声耦合变压器(FACT)的一个实施例包括具有下薄膜体声波谐振器(FBAR)的解耦堆叠体声波谐振器(DSBAR),堆叠在下FBAR上的上FBAR,以及在FBAR之间,声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极,它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器(DSBAR),每个如上所述,将第一电路互连到下FBAR,以及互连上FBAR的第二电路。 FACT提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,并将初级和次级电隔离。 一些实施例另外电平衡。

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