公开(公告)号：US20210366792A1

公开(公告)日：2021-11-25

申请号：US17198936

申请日：2021-03-11

Applicant: Tokyo Electron Limited

Inventor： Daniel FULFORD ,  Anton J. DEVILLIERS

IPC: H01L21/66 ,  H01L21/67 ,  H01L23/00

Abstract: A method of microfabrication is provided. A substrate having a working surface and having a backside surface opposite to the working surface is received. The substrate has an initial wafer bow resulting from one or more micro fabrication processing steps executed on the working surface of the substrate. The initial wafer bow of the substrate is measured and the initial wafer bow is used to generate an initial wafer bow value that identifies a degree of first order wafer bowing of the substrate. A correction film recipe based on the initial wafer bow value is identified. The correction film recipe specifies parameters of a correction film to be deposited on the backside surface of the substrate to change wafer bow of the substrate from the initial wafer bow to a modified wafer bow. The correction film on the backside surface of the substrate according to the correction film recipe is deposited. The correction film physically modifies internal stresses on the substrate and causes the substrate to have a modified bow with the predetermined wafer bow value.

公开(公告)号：US20210088904A1

公开(公告)日：2021-03-25

申请号：US17023470

申请日：2020-09-17

Applicant: Tokyo Electron Limited

Inventor： Anton J. DEVILLIERS ,  Jodi GRZESKOWIAK ,  Daniel FULFORD ,  Richard A. FARRELL ,  Jeffrey SMITH

IPC: G03F7/039 ,  H01L21/027 ,  G03F7/16 ,  G03F7/30 ,  G03F7/20

Abstract: A method of forming a pattern on a substrate is provided. The method includes forming a first layer on an underlying layer of the substrate, where the first layer is patterned to have a first structure. The method also includes depositing a grafting material on side surfaces of the first structure, where the grafting material includes a solubility-shifting material. The method further includes diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, where the solubility-shifting material changes solubility of the neighboring structure in a developer, and removing soluble portions of the neighboring structure using the developer to form a second structure.

公开(公告)号：US20210020453A1

公开(公告)日：2021-01-21

申请号：US16784619

申请日：2020-02-07

Applicant: Tokyo Electron Limited

Inventor： Daniel FULFORD ,  Jodi GRZESKOWIAK ,  Anton J. DEVILLIERS

IPC: H01L21/321 ,  H01L21/768

Abstract: The disclosure relates to techniques and methods for planarizing a substrate by amplifying and controlling z-height technology. Variability of z-height can be modeled or measured for each device. A counter height pattern can then be created and processed on a substrate. By using different materials with different etch rates, a planarizing pattern can be transferred to the substrate or system to create a planarized substrate surface for improved lithography. Additionally, a transition region slope can be precisely controlled using the same methods.