公开(公告)号：US20150361550A1

公开(公告)日：2015-12-17

申请号：US14731468

申请日：2015-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45582 ,  C23C16/4584 ,  H01L21/02219 ,  H01L21/0228

Abstract: Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed.

Abstract translation: 成膜装置包括：将衬底交替放置在第一区域和第二区域中的旋转机构; 原料气供应单元，为第一区域供应气态原料; 处理空间形成构件上下移动以形成与第一区域隔离的处理空间; 气氛气体供给单元，供给形成产生链分解反应的臭氧气氛的气氛气体; 能量供给单元，通过向臭氧气氛供给能量来强制分解臭氧，并通过氧化吸附在基板的表面上的原料来获得氧化物; 缓冲区连接到处理空间并供给惰性气体; 以及分隔单元，当将气氛气体供应到处理空间时，将缓冲区域与处理空间分隔开，并且当臭氧分解时使缓冲区域与处理空间通信。

公开(公告)号：US20150228473A1

公开(公告)日：2015-08-13

申请号：US14613541

申请日：2015-02-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Jun OGAWA

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02337 ,  H01L21/28229 ,  H01L29/517

Abstract: A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.

Abstract translation: 金属氧化物膜形成方法包括：重复循环第一预定次数，该循环包括将含有有机金属前体的气体供给到被处理物体的处理室中，并将氧气供给到处理室 在含有有机金属前体的气体被供给到处理室中之后; 向所述处理室供给臭氧气体，其中重复所述循环和供给所述臭氧气体的步骤重复第二预定次数，使得在被处理物体的表面上形成金属氧化物膜。