公开(公告)号：US20210312610A1

公开(公告)日：2021-10-07

申请号：US17193026

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki TANAKA ,  Ryu NAGAI

IPC: G06T7/00 ,  G06N20/00

Abstract: An analysis device includes learning circuitry configured to perform machine learning using a time series data group measured in association with a processing of an object in a processing space and to calculate a value indicating a relationship of time series data in a corresponding time range between respective measurement items and evaluation circuitry configured to evaluate an unknown condition of the processing space based on the value indicating the relationship calculated by performing machine learning by the learning circuitry using a time series data group measured in association with a processing of the object under a known condition of the processing space.

公开(公告)号：US20230170189A1

公开(公告)日：2023-06-01

申请号：US18070469

申请日：2022-11-29

Applicant: Tokyo Electron Limited

Inventor： Takashi KAKO ,  Ryu NAGAI ,  Koki TANAKA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32495 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/3255 ,  H01L21/31116 ,  H01J2237/3341 ,  H01J2237/3321

Abstract: A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.

公开(公告)号：US20230130385A1

公开(公告)日：2023-04-27

申请号：US18048618

申请日：2022-10-21

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Koki TANAKA

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/36 ,  G03F7/16

Abstract: In one exemplary embodiment, a method for forming a pattern includes (a) forming, on a substrate, a first pattern having an opening and containing a first material, (b) forming a filling portion in the opening, the filling portion containing a second material different from the first material, and (c) removing the first pattern so that the filling portion remains as a second pattern inverted with respect to the first pattern. At least one of the first material or the second material contains tin.

公开(公告)号：US20200263309A1

公开(公告)日：2020-08-20

申请号：US16793344

申请日：2020-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki TANAKA ,  Maju TOMURA

IPC: C23F4/00

Abstract: An etching method includes: providing a substrate including a silicon oxide film on a stage; controlling a surface temperature of the substrate to be −70° C. or lower; and etching the silicon oxide film with plasma generated by supplying a radio-frequency power to a gas containing fluorine and hydrogen, after the controlling the surface temperature of the substrate; and increasing the surface temperature of the substrate to volatilize a by-product generated by the etching.