公开(公告)号：US20240071723A1

公开(公告)日：2024-02-29

申请号：US18237067

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Koki TANAKA ,  Ryu NAGAI ,  Masahiko YOKOI ,  Ikko TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J2237/334

Abstract: An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.

公开(公告)号：US20230170189A1

公开(公告)日：2023-06-01

申请号：US18070469

申请日：2022-11-29

Applicant: Tokyo Electron Limited

Inventor： Takashi KAKO ,  Ryu NAGAI ,  Koki TANAKA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32495 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/3255 ,  H01L21/31116 ,  H01J2237/3341 ,  H01J2237/3321

Abstract: A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.

公开(公告)号：US20230115942A1

公开(公告)日：2023-04-13

申请号：US17961597

申请日：2022-10-07

Applicant: Tokyo Electron Limited

Inventor： Shuhei AKAHANE ,  Ryu NAGAI ,  Koki TANAKA

IPC: H01J37/32 ,  G05B13/02

Abstract: A substrate processing system includes: an acquiring unit that acquires a plurality of types of time-series data for each time when a plasma processing is performed on a substrate; a learning unit that generates a number of learned abnormal value detection models corresponding to a number of the plurality of types of the time-series data by calculating a data density of each of the plurality of types of time-series data acquired in a first phase; and a quantification unit that quantifies a state in a processing space in a second phase by inputting the plurality of types of time-series data acquired in the second phase into the corresponding learned abnormal value detection models, respectively, and calculating a divergence degree from the plurality of types of the time-series data acquired in the first phase.

公开(公告)号：US20210312610A1

公开(公告)日：2021-10-07

申请号：US17193026

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki TANAKA ,  Ryu NAGAI

IPC: G06T7/00 ,  G06N20/00

Abstract: An analysis device includes learning circuitry configured to perform machine learning using a time series data group measured in association with a processing of an object in a processing space and to calculate a value indicating a relationship of time series data in a corresponding time range between respective measurement items and evaluation circuitry configured to evaluate an unknown condition of the processing space based on the value indicating the relationship calculated by performing machine learning by the learning circuitry using a time series data group measured in association with a processing of the object under a known condition of the processing space.

公开(公告)号：US20220093367A1

公开(公告)日：2022-03-24

申请号：US17469895

申请日：2021-09-09

Applicant: Tokyo Electron Limited

Inventor： Koki TANAKA ,  Ryu NAGAI ,  Takatoshi ORUI ,  Ryutaro SUDA

IPC: H01J37/32

Abstract: A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.

公开(公告)号：US20220075358A1

公开(公告)日：2022-03-10

申请号：US17469251

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Ryu NAGAI ,  Koki TANAKA ,  Shuhei AKAHANE

IPC: G05B19/418 ,  G06K9/62 ,  H01L21/3065

Abstract: An analysis device includes: a calculation part configured to calculate a degree of deviation of a processing space, in which a plasma process is performed, from a reference condition by inputting, among time-series data groups measured in the processing space, a time-series data group measured in a determination section, which is a predetermined period of time before a control section, into a time-series analysis model; and a specifying part configured to specify a characteristic value for determining control data at a time of the plasma process of a substrate in the control section based on the calculated degree of deviation.