公开(公告)号：US20230170189A1

公开(公告)日：2023-06-01

申请号：US18070469

申请日：2022-11-29

Applicant: Tokyo Electron Limited

Inventor： Takashi KAKO ,  Ryu NAGAI ,  Koki TANAKA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32495 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/3255 ,  H01L21/31116 ,  H01J2237/3341 ,  H01J2237/3321

Abstract: A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.