公开(公告)号：US20230395360A1

公开(公告)日：2023-12-07

申请号：US18205426

申请日：2023-06-02

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Koki TANAKA ,  Yuzuru SAKAI ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J2237/182 ,  H01J37/32449 ,  H01J37/32137

Abstract: Provided is a technique capable of suppressing pressure fluctuations within a plasma processing chamber. A plasma processing apparatus according to the present disclosure includes: a chamber; a gas supply that supplies a processing gas into the chamber; a power supply that generates a source RF signal to form a plasma from the processing gas within the chamber; a storage that stores in advance a source set value that is a set value of a parameter of the source RF signal; a pressure regulation valve connected to the chamber, the pressure regulation valve being configured to regulate an internal pressure of the chamber; an opening degree calculator that calculates an opening degree of the pressure regulation valve, the opening degree being calculated based on the source set value; and an opening degree controller that controls the opening degree of the pressure regulation valve based on the calculated opening degree.

公开(公告)号：US20240071723A1

公开(公告)日：2024-02-29

申请号：US18237067

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Koki TANAKA ,  Ryu NAGAI ,  Masahiko YOKOI ,  Ikko TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J2237/334

Abstract: An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.

公开(公告)号：US20230282447A1

公开(公告)日：2023-09-07

申请号：US18115137

申请日：2023-02-28

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Takayuki KATSUNUMA ,  Shinya ISHIKAWA ,  Koki TANAKA ,  Sho KUMAKURA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32091 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/3342 ,  H01J2237/3348

Abstract: A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.

公开(公告)号：US20230035021A1

公开(公告)日：2023-02-02

申请号：US17876307

申请日：2022-07-28

Applicant: Tokyo Electron Limited

Inventor： Masahiko YOKOI ,  Koki TANAKA

IPC: H01J37/32

Abstract: The plasma processing method according to the present disclosure is performed in a plasma processing apparatus. The plasma processing method comprises preparing a substrate including a silicon-containing film and a carbon-containing film formed on the silicon-containing film; setting a temperature of the substrate to a first temperature of 0° C. or less; supplying H2O to the substrate using a first processing gas containing comprising at least one of (a) gas comprising hydrogen atoms and oxygen atoms, and (b) a first gas comprising hydrogen atoms and a second gas comprising oxygen atoms; forming plasma from the first processing gas using a radio frequency and etching the carbon-containing film; setting the temperature of the substrate to a second temperature different from the first temperature; supplying a second processing gas containing a hydrogen- and fluorine-containing gas or both a hydrogen-containing gas and a fluorine-containing gas to the substrate; and forming plasma from the second processing gas using a radio frequency and etching the silicon-containing film.

公开(公告)号：US20220093367A1

公开(公告)日：2022-03-24

申请号：US17469895

申请日：2021-09-09

Applicant: Tokyo Electron Limited

Inventor： Koki TANAKA ,  Ryu NAGAI ,  Takatoshi ORUI ,  Ryutaro SUDA

IPC: H01J37/32

Abstract: A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.

公开(公告)号：US20220075358A1

公开(公告)日：2022-03-10

申请号：US17469251

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Ryu NAGAI ,  Koki TANAKA ,  Shuhei AKAHANE

IPC: G05B19/418 ,  G06K9/62 ,  H01L21/3065

Abstract: An analysis device includes: a calculation part configured to calculate a degree of deviation of a processing space, in which a plasma process is performed, from a reference condition by inputting, among time-series data groups measured in the processing space, a time-series data group measured in a determination section, which is a predetermined period of time before a control section, into a time-series analysis model; and a specifying part configured to specify a characteristic value for determining control data at a time of the plasma process of a substrate in the control section based on the calculated degree of deviation.

公开(公告)号：US20240412955A1

公开(公告)日：2024-12-12

申请号：US18810862

申请日：2024-08-21

Applicant: Tokyo Electron Limited ,  TAIYO NIPPON SANSO CORPORATION

Inventor： Masahiko YOKOI ,  Koki TANAKA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Masahiro YONEKURA

IPC: H01J37/32

Abstract: A temperature adjusting system is a temperature adjusting system that cools a part in a plasma processing chamber and includes: a condenser that condenses a temperature adjusting medium that is in a gaseous state at normal temperature and normal pressure; a heat exchanger that cools the temperature adjusting medium that has been condensed by the condenser; a temperature adjusting unit that cools the part by heat exchange with the temperature adjusting medium that has been cooled by the heat exchanger; and a pump that circulates the temperature adjusting medium.

公开(公告)号：US20230115942A1

公开(公告)日：2023-04-13

申请号：US17961597

申请日：2022-10-07

Applicant: Tokyo Electron Limited

Inventor： Shuhei AKAHANE ,  Ryu NAGAI ,  Koki TANAKA

IPC: H01J37/32 ,  G05B13/02

Abstract: A substrate processing system includes: an acquiring unit that acquires a plurality of types of time-series data for each time when a plasma processing is performed on a substrate; a learning unit that generates a number of learned abnormal value detection models corresponding to a number of the plurality of types of the time-series data by calculating a data density of each of the plurality of types of time-series data acquired in a first phase; and a quantification unit that quantifies a state in a processing space in a second phase by inputting the plurality of types of time-series data acquired in the second phase into the corresponding learned abnormal value detection models, respectively, and calculating a divergence degree from the plurality of types of the time-series data acquired in the first phase.

公开(公告)号：US20230069553A1

公开(公告)日：2023-03-02

申请号：US17822239

申请日：2022-08-25

Applicant: Tokyo Electron Limited

Inventor： Koki TANAKA

IPC: H01J37/32

Abstract: An etching method includes (a) providing a substrate including a carbon-containing film, the substrate being situated on a substrate support and (b) etching the substrate with a plasma to form an etching shape in the carbon-containing film, the plasma being configured to be formed from a gas containing H and O, the etching shape including a bottom. In (b), a temperature of the substrate support is adjusted to 0° C. or less.

公开(公告)号：US20210398819A1

公开(公告)日：2021-12-23

申请号：US17465440

申请日：2021-09-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki TANAKA ,  Maju TOMURA

IPC: H01L21/3213 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311

Abstract: An etching method includes: providing a substrate including a silicon oxide film on a stage; controlling a surface temperature of the substrate to be −70° C. or lower; and etching the silicon oxide film with plasma generated by supplying a radio-frequency power to a gas containing fluorine and hydrogen, after the controlling the surface temperature of the substrate; and increasing the surface temperature of the substrate to volatilize a by-product generated by the etching.