公开(公告)号：US20220213596A1

公开(公告)日：2022-07-07

申请号：US17701341

申请日：2022-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: C23C16/455 ,  H01L21/311 ,  C23F1/08 ,  C23C16/44 ,  C23C16/52 ,  H01L21/306

Abstract: A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NH3 gas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NH3 gas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.

公开(公告)号：US20220068657A1

公开(公告)日：2022-03-03

申请号：US17445961

申请日：2021-08-26

Applicant: Tokyo Electron Limited

Inventor： Koji TAKEYA ,  Gen YOU ,  Jeongchan LEE ,  Satoshi TODA ,  Keiko HADA

IPC: H01L21/311 ,  H01L21/67

Abstract: An etching method of an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening sizes, by supplying an etching gas to the substrate, the etching method including: adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate; desorbing an excess of the organic amine compound gas from the substrate; and selectively etching the oxygen-containing silicon film with respect to each recess by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.

公开(公告)号：US20210090912A1

公开(公告)日：2021-03-25

申请号：US17016872

申请日：2020-09-10

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Ryo KUWAJIMA ,  Satoshi TODA

IPC: H01L21/67 ,  H01L21/687

Abstract: An etching apparatus includes: a processing container configured to be evacuated to form a vacuum atmosphere in the processing container and including a wall that has an alloy composed of aluminum and an additive metal as a base material; a stage installed in the processing container and configured to mount a substrate having a metal film formed on a surface of the substrate; a gas supplier installed in the processing container and configured to supply an oxidizing gas that oxidizes the metal film and an etching gas that is β-diketone to the stage to etch the oxidized metal film; and a wall heater configured to heat the wall to a temperature in a range of 60 degrees C. to 90 degrees C. when the etching gas is supplied from the gas supplier into the processing container.