公开(公告)号：US20160086814A1

公开(公告)日：2016-03-24

申请号：US14784962

申请日：2014-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Tetsuro TAKAHASHI ,  Shuji MORIYA ,  Masashi MATSUMOTO ,  Junichiro MATSUNAGA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.

Abstract translation: 蚀刻方法包括将目标基板W装载到室40中，其上形成有氮化硅膜的目标基板W和与氮化硅膜相邻形成的多晶硅膜和氧化硅膜中的至少一个; 至少将O2气体激发，将含氟（F）的气体和O 2气体供给到室40中; 并且使用含F气体和O 2气体，相对于至少一个多晶硅膜和氧化硅膜选择性地蚀刻氮化硅膜。

公开(公告)号：US20190153599A1

公开(公告)日：2019-05-23

申请号：US16092683

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: C23C16/455 ,  H01L21/306 ,  C23C16/52 ,  C23C16/44

Abstract: A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NH3 gas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NH3 gas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.

公开(公告)号：US20240412978A1

公开(公告)日：2024-12-12

申请号：US18718981

申请日：2022-09-29

Applicant: Tokyo Electron Limited

Inventor： Kimihiko DEMICHI ,  Tetsuro TAKAHASHI ,  Changhwan SEOK ,  Jun KOBAYASHI ,  Akihiro SATO

IPC: H01L21/311 ,  H01L21/67

Abstract: A gas treatment method of performing a gas treatment on a substrate having a recess includes: disposing the substrate having the recess in a chamber; adjusting a pressure inside the chamber to a predetermined pressure by supplying a pressure adjustment gas into the chamber in an evacuated state to increase the pressure inside the chamber; and subsequently, performing the gas treatment on a side wall of the recess of the substrate by causing a treatment reaction by a process gas in the chamber, wherein the process gas causing the treatment reaction is used as at least a part of the pressure adjustment gas in the adjusting the pressure.

公开(公告)号：US20160111304A1

公开(公告)日：2016-04-21

申请号：US14886325

申请日：2015-10-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Kazunori KAZAMA ,  Noriyuki IWABUCHI ,  Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: H01L21/67 ,  H01L21/3065

Abstract: There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Abstract translation: 提供了一种在真空气氛下对多个目标基板执行预定的基板工艺的基板处理装置，包括：多个处理部件，每个处理部件被配置为对多个目标基板中的每一个进行基板处理; 气体供给机构，其构造成将处理气体供给到所述多个处理部中的每一个; 单个排气机构，其构造成排出所述多个处理部件内的处理气体; 以及控制部，被配置为控制所述单个排气机构，以共同排出所述多个处理部内的处理气体，并且控制所述气体供给机构，以将所述处理气体分别供给到所述多个处理部中的每一个，使得内部 防止了多个处理部件的压力。

公开(公告)号：US20220213596A1

公开(公告)日：2022-07-07

申请号：US17701341

申请日：2022-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: C23C16/455 ,  H01L21/311 ,  C23F1/08 ,  C23C16/44 ,  C23C16/52 ,  H01L21/306

Abstract: A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NH3 gas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NH3 gas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.