公开(公告)号：US11177133B2

公开(公告)日：2021-11-16

申请号：US16690958

申请日：2019-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi ,  Yoshimasa Watanabe

IPC: H01L21/02 ,  H01L21/268

Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

公开(公告)号：US20220238374A1

公开(公告)日：2022-07-28

申请号：US17648700

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Satoshi Takagi ,  Akari Matsunaga ,  Keisuke Fujita

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/24 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

公开(公告)号：US20190318945A1

公开(公告)日：2019-10-17

申请号：US16379990

申请日：2019-04-10

Applicant: Tokyo Electron Limited

Inventor： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC: H01L21/67

Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.

公开(公告)号：US10283405B2

公开(公告)日：2019-05-07

申请号：US15473489

申请日：2017-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Satoshi Takagi

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01L21/3205 ,  H01L21/3213

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

公开(公告)号：US08895414B1

公开(公告)日：2014-11-25

申请号：US14323148

申请日：2014-07-03

Applicant: Tokyo Electron Limited

Inventor： Akinobu Kakimoto ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

公开(公告)号：US11851752B2

公开(公告)日：2023-12-26

申请号：US17654139

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Akari Matsunaga ,  Yutaka Motoyama ,  Satoshi Takagi

IPC: C23C16/24 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/24 ,  C23C16/45563 ,  C23C16/52 ,  H01L21/02532

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

公开(公告)号：US11251034B2

公开(公告)日：2022-02-15

申请号：US16281418

申请日：2019-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Hayashi ,  Rui Kanemura ,  Satoshi Takagi ,  Mitsuhiro Okada

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/24

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

公开(公告)号：US10570508B2

公开(公告)日：2020-02-25

申请号：US15852668

申请日：2017-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi ,  Katsuhiko Komori ,  Mitsuhiro Okada ,  Masahisa Watanabe ,  Kazuya Takahashi ,  Kazuki Yano ,  Keisuke Fujita

IPC: C23C16/24 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/673 ,  C23C16/46

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.