公开(公告)号：US11726409B2

公开(公告)日：2023-08-15

申请号：US17522050

申请日：2021-11-09

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Kunugimoto ,  Shota Ueyama ,  Akihiro Teramoto ,  Yuta Nishiyama ,  Shinichi Hatakeyama

IPC: G01G21/22 ,  G03F7/00 ,  B08B13/00 ,  G01F9/00 ,  G03F7/16 ,  B08B3/02

CPC classification number: G03F7/70491 ,  B08B3/02 ,  B08B13/00 ,  G01F9/003 ,  G01G21/22 ,  G03F7/16

Abstract: A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.

公开(公告)号：US10139732B2

公开(公告)日：2018-11-27

申请号：US15941298

申请日：2018-03-30

Applicant: Tokyo Electron Limited

Inventor： Shinichiro Kawakami ,  Hiroshi Mizunoura ,  Shinichi Hatakeyama

IPC: G03D5/00 ,  G03F7/32 ,  G03F7/42 ,  G03F7/30 ,  G03F7/11

Abstract: A coating and developing apparatus 2 includes a first protection processing unit U01, a film forming unit U02, a first cleaning processing unit U03 and a control unit U08. The control unit U08 is configured to control the first protection processing unit U01 to form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit U02 to form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit U03 to supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit U03 to supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit U03 to supply a third cleaning liquid for removing the first protective film PF1 to the peripheral portion Wc.

公开(公告)号：US20180059539A1

公开(公告)日：2018-03-01

申请号：US15682750

申请日：2017-08-22

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Masanobu Watanabe ,  Kouzo Nishi ,  Seiya Totsuka ,  Kentaro Yoshihara

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/0027 ,  G03F7/162 ,  G03F7/70433 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67253

Abstract: A substrate processing apparatus according to the present disclosure includes: a nozzle that ejects a processing liquid to a wafer; a force-feeding unit that force-feeds the processing liquid to the nozzle side; a liquid feeding pipeline that includes first and second valves and guides the processing liquid from the force-feeding unit to the nozzle; and a controller. The controller is configured to perform opening the first valve in a state where the second valve is closed and a pressure between the first and second valves is higher than a pressure between the force-feeding unit and the first valve, controlling the force-feeding unit to increase the pressure between the first and second valves that has been decreased by the opening of the first valve, and opening the second valve after the pressure between the first and second valves is decreased by the opening of the first valve.

公开(公告)号：US09082614B1

公开(公告)日：2015-07-14

申请号：US14682268

申请日：2015-04-09

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Abstract translation: 提供了在基板的周边区域上涂布涂布液的周边涂布方法。 该方法包括：在旋转基板并从涂布液喷嘴排出涂布液的同时，将涂布液喷嘴从基板的边缘的外侧移动到基板的周边区域以上的位置的扫描过程; 并且在旋转基板并从涂布液喷嘴排出涂布液的同时执行将涂布液喷嘴从基板的周边区域上方的位置移动到基板的边缘的外部的扫描处理。 此外，在扫描过程中，涂布液喷嘴以比涂布液移动到基板的边缘侧的速度低的速度移动。