公开(公告)号：US20230098105A1

公开(公告)日：2023-03-30

申请号：US17908693

申请日：2021-02-18

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Yusaku Hashimoto ,  Takafumi Niwa

IPC: C23C18/16

Abstract: A substrate processing apparatus 5 includes a holder 52 (52A), a supply 53 and a cover body 6. The holder 52 (52A) is configured to attract and hold a substrate W. The supply 53 is configured to supply a heated plating liquid to the substrate W attracted to and held by the holder 52 (52A). The cover body 6 is configured to cover the substrate W attracted to and held by the holder 52 (52A), and heat the plating liquid on the substrate W by using a heating device 63 provided in a ceiling member 61 thereof facing a top surface of the substrate W. The holder 52 (52A) includes protrusions 130 projecting from a facing surface 110 thereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.

公开(公告)号：US20200050111A1

公开(公告)日：2020-02-13

申请号：US16656925

申请日：2019-10-18

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/30 ,  G03F7/16

Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

公开(公告)号：US10359702B2

公开(公告)日：2019-07-23

申请号：US16152603

申请日：2018-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeshi Shimoaoki ,  Yusaku Hashimoto ,  Shogo Inaba

IPC: G03F7/16

Abstract: Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.

公开(公告)号：US10203605B2

公开(公告)日：2019-02-12

申请号：US15444671

申请日：2017-02-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/32 ,  G03F7/26 ,  B05D1/00 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/67

Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

公开(公告)号：US10185220B2

公开(公告)日：2019-01-22

申请号：US15262489

申请日：2016-09-12

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: B05C11/08 ,  B05C5/02 ,  B05D1/40 ,  B05D1/26 ,  G03F7/30 ,  B05D1/00 ,  H01L21/67

Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

公开(公告)号：US20180157178A1

公开(公告)日：2018-06-07

申请号：US15823847

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/30 ,  G03F7/16

CPC classification number: G03F7/3021 ,  G03F7/162

Abstract: A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.