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公开(公告)号：US10731256B2
公开(公告)日：2020-08-04
申请号：US15479429
申请日：2017-04-05
摘要： A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.
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公开(公告)号：US09837308B2
公开(公告)日：2017-12-05
申请号：US14384861
申请日：2013-02-22
IPC分类号： H01L21/768 , H01L21/288 , C23C18/18 , C23C18/16 , C23C18/38 , C23C14/02 , C23C16/02 , C23C28/00 , C23C14/24 , C23C14/04 , C23C16/04
CPC分类号： H01L21/76867 , C23C14/024 , C23C14/046 , C23C14/24 , C23C16/0272 , C23C16/045 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1692 , C23C18/1694 , C23C18/1844 , C23C18/1893 , C23C18/38 , C23C28/322 , C23C28/34 , H01L21/288 , H01L21/76841 , H01L21/76843 , H01L21/76873 , H01L21/76874 , H01L21/76898
摘要： A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.
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公开(公告)号：US20170292192A1
公开(公告)日：2017-10-12
申请号：US15479429
申请日：2017-04-05
摘要： A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.
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公开(公告)号：US09761485B2
公开(公告)日：2017-09-12
申请号：US14796227
申请日：2015-07-10
发明人： Yuichiro Inatomi , Takashi Tanaka
IPC分类号： H01L21/31 , H01L21/469 , H01L21/768 , H01L21/288 , C23C18/16 , C23C18/18 , C23C18/40 , C23C18/50 , C25D7/00
CPC分类号： H01L21/76874 , C23C18/1633 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1893 , C23C18/40 , C23C18/50 , C25D7/00 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L21/76898
摘要： A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.
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公开(公告)号：US09523153B2
公开(公告)日：2016-12-20
申请号：US14548893
申请日：2014-11-20
IPC分类号： C23C28/00 , C23C28/02 , C23C18/04 , C23C18/06 , C23C18/16 , C23C18/32 , H01L21/768 , H01L21/288 , C23C18/18 , C23C18/02 , C23C18/12 , C23C18/38
CPC分类号： C23C28/34 , C23C18/02 , C23C18/04 , C23C18/06 , C23C18/1275 , C23C18/165 , C23C18/1651 , C23C18/1851 , C23C18/1865 , C23C18/1868 , C23C18/1893 , C23C18/32 , C23C18/38 , C23C28/00 , C23C28/021 , C23C28/321 , H01L21/288 , H01L21/76874 , H01L21/76898
摘要： A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.
摘要翻译： 电镀的预处理方法即使在凹部具有高纵横比的情况下，也可以在凹部的内表面和凹部的外侧的基板的表面上形成具有充分粘合性的镀层。 电镀预处理方法包括制备具有凹部的基板的制备方法; 通过使用第一偶联剂，至少在基板的凹部的内表面上形成第一耦合层21a的第一耦合层形成工艺; 以及第二耦合层形成工艺，其在第一耦合层形成工艺之后通过使用第二偶联剂在至少在凹部的外部的基板的表面上形成第二耦合层21b。
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公开(公告)号：US20230098105A1
公开(公告)日：2023-03-30
申请号：US17908693
申请日：2021-02-18
IPC分类号： C23C18/16
摘要： A substrate processing apparatus 5 includes a holder 52 (52A), a supply 53 and a cover body 6. The holder 52 (52A) is configured to attract and hold a substrate W. The supply 53 is configured to supply a heated plating liquid to the substrate W attracted to and held by the holder 52 (52A). The cover body 6 is configured to cover the substrate W attracted to and held by the holder 52 (52A), and heat the plating liquid on the substrate W by using a heating device 63 provided in a ceiling member 61 thereof facing a top surface of the substrate W. The holder 52 (52A) includes protrusions 130 projecting from a facing surface 110 thereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.
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公开(公告)号：US20220406605A1
公开(公告)日：2022-12-22
申请号：US17755405
申请日：2020-10-16
发明人： Yuichiro Inatomi
IPC分类号： H01L21/288 , C23C18/16 , C23C16/44
摘要： A substrate liquid processing method includes holding a substrate W with a substrate holder 52; supplying a plating liquid L1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.
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公开(公告)号：US11028483B2
公开(公告)日：2021-06-08
申请号：US16344932
申请日：2017-08-29
发明人： Yuichiro Inatomi , Takashi Tanaka , Kazutoshi Iwai
IPC分类号： C23C18/18 , C23C18/16 , C23C18/34 , H01L21/3065 , H01L21/033 , H01L21/3205
摘要： A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.
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公开(公告)号：US20190256980A1
公开(公告)日：2019-08-22
申请号：US16344932
申请日：2017-08-29
发明人： Yuichiro Inatomi , Takashi Tanaka , Kazutoshi Iwai
IPC分类号： C23C18/18 , C23C18/34 , H01L21/3065 , C23C18/16
摘要： A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.
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公开(公告)号：US10179950B2
公开(公告)日：2019-01-15
申请号：US15184215
申请日：2016-06-16
IPC分类号： C23C18/50 , C23C18/38 , C23C18/16 , C23C18/32 , H01L21/768 , H01L21/288 , C23C18/18
摘要： Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.
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