公开(公告)号：US11557495B2

公开(公告)日：2023-01-17

申请号：US16735902

申请日：2020-01-07

Applicant: Tokyo Electron Limited

Inventor： Shogo Inaba

IPC: H01L21/67 ,  B05C11/08 ,  H01L21/02 ,  G03F7/16 ,  B05D1/00

Abstract: A coating film forming method includes: rotating a substrate at a first rotation speed in a coating cup with an upper surface open, and supplying and diffusing a coating solution for forming a coating film on the substrate; and after the supplying and diffusing the coating solution, drying the substrate by exhausting air through a gap between an annular member arranged above the substrate with centers thereof being located on a same axis and the front surface of the substrate, while rotating the substrate at a second rotation speed lower than the first rotation speed, wherein at the drying the substrate, a flow velocity of the air exhausted through the gap is higher than a flow velocity of air supplied from above the substrate in the coating cup to the substrate.

公开(公告)号：US20190146344A1

公开(公告)日：2019-05-16

申请号：US16152603

申请日：2018-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeshi Shimoaoki ,  Yusaku Hashimoto ,  Shogo Inaba

IPC: G03F7/16

CPC classification number: G03F7/162

Abstract: Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.

公开(公告)号：US10359702B2

公开(公告)日：2019-07-23

申请号：US16152603

申请日：2018-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeshi Shimoaoki ,  Yusaku Hashimoto ,  Shogo Inaba

IPC: G03F7/16

Abstract: Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.

公开(公告)号：US11773492B2

公开(公告)日：2023-10-03

申请号：US17464926

申请日：2021-09-02

Applicant: Tokyo Electron Limited

Inventor： Shogo Inaba ,  Masatoshi Kawakita

IPC: B05C5/02 ,  C23C18/20 ,  C23C18/16

CPC classification number: C23C18/2033 ,  B05C5/0204 ,  B05C5/0216 ,  C23C18/1692 ,  C23C18/2046

Abstract: A substrate processing apparatus for forming a coating film on a peripheral edge portion including a peripheral edge of a front surface and a side surface of a substrate, includes: a substrate holder for rotatably holding the substrate; a first chemical liquid supplier for supplying a first chemical liquid onto the peripheral edge including a rear surface of the substrate; a partial removing part for removing the first chemical liquid adhering to at least a portion of the front and side surfaces; a second chemical liquid supplier for supplying a second chemical liquid for forming the coating film onto the front and side surfaces; a first chemical liquid removing part for removing the first chemical liquid remaining on the substrate to which the second chemical liquid adheres; and a controller for controlling the parts described above.

公开(公告)号：US11065639B2

公开(公告)日：2021-07-20

申请号：US16468356

申请日：2017-11-24

Applicant: Tokyo Electron Limited

Inventor： Shogo Inaba ,  Kosuke Yoshihara ,  Shinichi Hatakeyama

IPC: B05C11/08 ,  B05C5/02 ,  B05D1/36 ,  B05D3/12 ,  B05D1/00 ,  H01L21/027

Abstract: A method for coating a top of a substrate with a coating solution includes supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion. The method includes, then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.