公开(公告)号：US20100227452A1

公开(公告)日：2010-09-09

申请号：US12161819

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20090298811A1

公开(公告)日：2009-12-03

申请号：US12440646

申请日：2007-09-03

申请人： Kazuo Ando ,  Ingrid Price Buchler ,  Shridhar Gajanan Hedge ,  Makoto Kawai ,  Tsutomu Masuda ,  Hirofumi Omura

发明人： Kazuo Ando ,  Ingrid Price Buchler ,  Shridhar Gajanan Hedge ,  Makoto Kawai ,  Tsutomu Masuda ,  Hirofumi Omura

IPC分类号： A61K31/55 ,  A61K31/5377 ,  A61K31/4965 ,  A61K31/437 ,  A61K31/4245 ,  A61K31/4184 ,  C07D405/14 ,  C07D413/06 ,  C07D403/08 ,  C07D471/04 ,  C07D413/12 ,  C07D235/24

CPC分类号： C07D413/06 ,  A61K31/16 ,  C07D235/26 ,  C07D401/06 ,  C07D403/06 ,  C07D403/12 ,  C07D405/06 ,  C07D413/12 ,  C07D413/14 ,  C07D471/04

摘要： This invention relates to compounds and methods for the treatment of a condition mediated by CB1 receptor activity in a mammalian subject including a human, which comprises administering to a mammal in need of such treatment a therapeutically effective amount of the compound of formula (I) or pharmaceutically acceptable salts thereof, wherein: A, B, R1, R2 and R3 are each as described herein. These compounds are useful in the treatment of a condition mediated by CB2 receptor binding activity such as, but not limited to, inflammatory pain, nociceptive pain, neuropathic pain, fibromyalgia, chronic low back pain, visceral pain, acute cerebral ischemia, pain, chronic pain, acute pain, post herpetic neuralgia, neuropathies, neuralgia, diabetic neuropathy, HIV-related neuropathy, nerve injury, rheumatoid arthritic pain, osteoarthritic pain, back pain, cancer pain, dental pain, fibromyalgia, neuritis, sciatica, inflammation, neurodegenerative disease, spasticity, epilepsy, Tourette's syndrome, Parkinson's disease, neuroprotection, anxiety, cough, broncho constriction, irritable bowel syndrome (IBS), inflammatory bowel disease (IBD), colitis, cerebrovascular ischemia, cachexia, nausea, emesis, chemotherapy-induced emesis, rheumatoid arthritis, asthma, Crohn's disease, ulcerative colitis, asthma, dermatitis, seasonal allergic rhinitis, gastroesophageal reflux disease (GERD), constipation, diarrhea, functional gastrointestinal disorder, cutaneous T cell lymphoma, multiple sclerosis, osteoarthritis, psoriasis, systemic lupus erythematosus, diabetes, glaucoma, osteoporosis, glomerulonephritis, renal ischemia, nephritis, hepatitis, cerebral stroke, vasodialation, hypertension, vasculitis, myocardial infarction, cerebral ischemia, reversible airway obstruction, adult respiratory disease syndrome, chronic obstructive pulmonary disease (COPD), cryptogenic fibrosing alveolitis and bronchitis.

公开(公告)号：US20090061557A1

公开(公告)日：2009-03-05

申请号：US12282176

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L31/18

CPC分类号： H01L21/76254 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.

摘要翻译： 在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入 层。 然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发， 相生长以提供锗基晶体。 锗基晶体层的表面和支撑基板的表面接合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

公开(公告)号：US20080299742A1

公开(公告)日：2008-12-04

申请号：US12153519

申请日：2008-05-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/86

CPC分类号： H01L21/76254 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/014

摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

摘要翻译： 公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US20080194078A1

公开(公告)日：2008-08-14

申请号：US12010711

申请日：2008-01-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.

摘要翻译： 为了获得大面积地具有高质量Ge基外延膜的半导体衬底，在Si衬底10的主表面上生长SiGe混晶缓冲层和Ge外延膜。 虽然在Ge外延膜11和Si衬底10之间的界面上在Ge外延膜11中引入高密度缺陷，但Ge外延膜在不低于700℃的温度下进行热处理， 不超过900℃导致穿透位错12变为位于Ge外延膜11和Si衬底之间的界面附近的位错环缺陷12'。 为了表面清洁，表面活化等目的，对具有离子注入层的Ge外延膜11和支撑基板20中的至少一个的主表面进行等离子体处理或臭氧处理，之后， Ge外延膜11和支撑基板20的主表面以其表面被确定为接合表面而相互贴合并彼此结合。 然后对接合界面施加外部冲击，使得Ge外延膜沿着氢离子注入界面13分层，从而获得Ge薄膜14。 随后，对Ge薄膜14的表面进行最终表面处理（例如CMP），以消除由氢离子注入引起的损伤，从而得到其表面上具有Ge薄膜14的GeOI基板。

公开(公告)号：US20080148256A1

公开(公告)日：2008-06-19

申请号：US11610674

申请日：2006-12-14

申请人： Kenshi Doi ,  Masaaki Ishibashi ,  Makoto Kawai ,  Nobuhide Matsuoka ,  Kunio Okuda ,  Kazuhiro Yabuta

发明人： Kenshi Doi ,  Masaaki Ishibashi ,  Makoto Kawai ,  Nobuhide Matsuoka ,  Kunio Okuda ,  Kazuhiro Yabuta

IPC分类号： G06F9/46

CPC分类号： H04L67/02 ,  H04L67/142

摘要： A method and system are provided to replay an HTTP transaction that is comprised of multiple events. Each event is identified and organized based upon transaction of events over the course of time. The events of the transaction are replayed and organized into an order dependent relationship. The number of computations increases linearly with the number of events in the transaction.

摘要翻译： 提供了一种方法和系统来重播由多个事件组成的HTTP事务。 每个事件都是根据事件的事件进行识别和组织的。 交易的事件被重播并且被组织成依赖于顺序的关系。 计算次数随交易中的事件数量呈线性增加。

公开(公告)号：US20080119028A1

公开(公告)日：2008-05-22

申请号：US11984184

申请日：2007-11-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/3247 ,  H01L21/76254 ,  H01L29/78603

摘要： To lower a process temperature for an SOQ substrate manufacturing process to reduce the degree of surface roughness of an SOQ film and provide a high-quality SOQ substrate.Hydrogen ions are implanted to a surface of a single crystal Si substrate 10 through an oxide film 11 to uniformly form an ion implanted layer 12 at a predetermined depth (average ion implantation depth L) from the surface of the single crystal Si substrate 10, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate 10 and quartz substrate 20, which are bonded together, to mechanically delaminate a silicon film 13 from a single crystal silicon bulk 14. In this way, the SOQ film 13 is formed on the quartz substrate 20 through the oxide film 11. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point. When measuring surface roughness of an SOQ film after performing hydrogen heat treatment on a sample having surface roughness of about 5 nm in terms of RMS average value immediately after delamination, a satisfactory measurement result of 0.3 nm or less in terms of RMS average value was obtained.

摘要翻译： 为了降低SOQ基板制造工艺的工艺温度以降低SOQ膜的表面粗糙度并提供高质量的SOQ基板。 通过氧化膜11将氢离子注入到单晶Si衬底10的表面，以从单晶硅衬底10的表面以预定深度（平均离子注入深度L）均匀地形成离子注入层12，以及 基板的接合面进行等离子体处理或臭氧处理。 对结合在一起的单晶Si衬底10和石英衬底20施加外部冲击，从而将硅膜13与单晶硅体14机械地分层。这样，SOQ膜13形成在石英 基板20通过氧化膜11.为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。 在对分层后的RMS平均值的表面粗糙度约为5nm的样品进行氢热处理后，测定SOQ膜的表面粗糙度，得到满意的平均值为0.3nm以下的测定结果 。

公开(公告)号：US20080099065A1

公开(公告)日：2008-05-01

申请号：US11907902

申请日：2007-10-18

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/04 ,  B29C65/00

CPC分类号： H01L31/1804 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。 可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是 由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

公开(公告)号：US20080014963A1

公开(公告)日：2008-01-17

申请号：US11730245

申请日：2007-03-30

申请人： Yasuhisa Takizawa ,  Peter Davis ,  Makoto Kawai ,  Hisato Iwai ,  Akira Yamaguchi ,  Sadao Obana

发明人： Yasuhisa Takizawa ,  Peter Davis ,  Makoto Kawai ,  Hisato Iwai ,  Akira Yamaguchi ,  Sadao Obana

IPC分类号： H04Q7/20

CPC分类号： H04W64/00 ,  G01S5/14

摘要： A radio apparatus forming a radio network system calculates a calculated distance, based on a tentative self-position and tentative positions of a plurality of radio apparatuses existing in the vicinity. The radio apparatus successively and autonomously corrects the tentative self-position so that the calculated distance comes closer to the measured distance, relying more heavily on the calculated distance than the measured distance between itself and each of the plurality of radio apparatuses, and determines the position of itself. Other radio apparatuses also successively correct the tentative self-positions by the same method as the radio apparatus, and determine the positions of themselves.

摘要翻译： 形成无线电网络系统的无线电设备基于存在于附近的多个无线电设备的临时自身位置和临时位置来计算计算出的距离。 无线电设备相继地并且自主地校正临时自身位置，使得所计算的距离更靠近测量的距离，更依赖于所计算的距离，而不是其测量的与多个无线电设备中的每一个之间的距离，并且确定位置 本身。 其他无线电设备也通过与无线电设备相同的方法连续校正临时自身位置，并且确定其自身的位置。

公开(公告)号：US07045597B2

公开(公告)日：2006-05-16

申请号：US10250644

申请日：2001-01-04

申请人： Makoto Kawai ,  Tadashi Okada ,  Fukiko Atsumi ,  Masao Shibata ,  Motoki Kuhara

发明人： Makoto Kawai ,  Tadashi Okada ,  Fukiko Atsumi ,  Masao Shibata ,  Motoki Kuhara

IPC分类号： C07K14/435 ,  A61K39/00

CPC分类号： C07K14/705 ,  C07K16/28

摘要： A mast cell surface antigen, DNA thereof and an antibody against the antigen are provided. The amino acid sequence of this mast cell surface antigen is the translation of the coding region of its DNA. The base sequence of this DNA has been clarified in the following manner. Namely, mast cells obtained by incubating cord blood monocular cells are co-incubated with primary culture of fibroblasts to give connective tissue type mast cells (MC-TC). Then mRNA is extracted from this MC-TC cell extraction and a cDNA library is constructed therefrom. Immunological screening is carried out with the use of anti-MC-TC antiserum and the base sequence of the positive clone thus obtained is identified. Owing to the clarification of the amino acid sequence of this mast cell antigen, it becomes possible to reveal the role of mast cells in the pathology of allergic diseases and thus an antibody against mast cells can be easily obtained.

摘要翻译： 提供肥大细胞表面抗原，其DNA和针对抗原的抗体。 该肥大细胞表面抗原的氨基酸序列是其DNA编码区的翻译。 该DNA的碱基序列已经以下述方式进行了说明。 即，将通过孵育脐带血单核细胞获得的肥大细胞与成纤维细胞的原代培养物共温育以产生结缔组织型肥大细胞（MC-TC）。 然后从该MC-TC细胞提取中提取mRNA，并由其构建cDNA文库。 使用抗MC-TC抗血清进行免疫筛选，鉴定得到的阳性克隆的碱基序列。 由于这种肥大细胞抗原的氨基酸序列的澄清，可以揭示肥大细胞在过敏性疾病的病理学中的作用，因此可以容易地获得抗肥大细胞的抗体。