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    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
    11.
    发明授权
    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
    具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器

    公开(公告)号：US08557407B2

    公开(公告)日：2013-10-15

    申请号：US12806164

    申请日：2010-08-06

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： G11B5/39

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

    摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1ohm-um2的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。

    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
    12.
    发明授权
    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
    具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器

    公开(公告)号：US08337676B2

    公开(公告)日：2012-12-25

    申请号：US12806082

    申请日：2010-08-05

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： C23C14/34

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

    摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1ohm-um2的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。

    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
    13.
    发明申请
    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
    具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器

    公开(公告)号：US20100320076A1

    公开(公告)日：2010-12-23

    申请号：US12806082

    申请日：2010-08-05

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： C23C14/35

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

    摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1ohm-um2的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。

    Method of manufacturing a CPP structure with enhanced GMR ratio
    17.
    发明授权
    Method of manufacturing a CPP structure with enhanced GMR ratio 有权
    制造具有增强的GMR比的CPP结构的方法

    公开(公告)号：US07918014B2

    公开(公告)日：2011-04-05

    申请号：US11180808

    申请日：2005-07-13

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/187 ,  C23C14/34

    CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

    摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

    摘要翻译： 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    18.
    发明申请
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US20090314632A1

    公开(公告)日：2009-12-24

    申请号：US12583742

    申请日：2009-08-25

    申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC分类号： C23C14/34 ,  B05D5/12

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    摘要翻译： 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    19.
    发明授权
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US07583481B2

    公开(公告)日：2009-09-01

    申请号：US11234719

    申请日：2005-09-23

    申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    摘要翻译： 公开了具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％，z为75至100 原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与使用常规AP2 Co50Fe5或Co75Fe25单层的自旋阀相比，EM性能显着提高。 自旋阀的MR比也增加，RA保持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    Uniformity in CCP magnetic read head devices
    20.
    发明申请
    Uniformity in CCP magnetic read head devices 有权
    CCP磁读头装置的均匀性

    公开(公告)号：US20080192388A1

    公开(公告)日：2008-08-14

    申请号：US11704399

    申请日：2007-02-09

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    IPC分类号： G11B5/127

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3983 ,  Y10T428/1121

    摘要： Improved performance uniformity among CPP magnetic read devices that include an oxide barrier has been achieved by fabricating the oxide layer from at least two separately formed CCP layers. Each CCP layer is given its own PIT and IAO treatment which is of shorter duration than the PIT/IAO treatment that is used when only a single CCP layer is formed.

    摘要翻译： 通过从至少两个单独形成的CCP层制造氧化物层，已经实现了包括氧化物屏障的CPP磁读取装置之间的改进的性能均匀性。 给每个CCP层提供自己的PIT和IAO处理，其持续时间比仅在形成单个CCP层时使用的PIT / IAO处理更短。