利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

423 条记录 (耗时 0.03 秒)

    Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications
    2.
    发明申请
    Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications 有权
    降低CO2MnSi样Heusler合金对CPP，TMR，MRAM或其他自旋电子器件应用的订购温度的新方法

    公开(公告)号：US20070297103A1

    公开(公告)日：2007-12-27

    申请号：US11472126

    申请日：2006-06-21

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

    摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个附加的FeCo层，以得到由FeCo / [HA / IL] N HA表示的构型，[HA / IL] N < HA / FeCo或FeCo / [HA / IL] N / HACo，其中n为整数> = 1，HA为Heusler合金层，IL为插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co 2 MnSi可以与Al或FeCo靶或与Co 2 N 2 MnAl或Co 2 FeSi靶共溅射。

    Magnetoresistive spin valve sensor with tri-layer free layer
    3.
    发明申请
    Magnetoresistive spin valve sensor with tri-layer free layer 有权
    具有三层自由层的磁阻自旋阀传感器

    公开(公告)号：US20070047159A1

    公开(公告)日：2007-03-01

    申请号：US11209231

    申请日：2005-08-23

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

    摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

    摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

    Ultra thin seed layer for CPP or TMR structure
    5.
    发明申请
    Ultra thin seed layer for CPP or TMR structure 有权
    用于CPP或TMR结构的超薄种子层

    公开(公告)号：US20070146928A1

    公开(公告)日：2007-06-28

    申请号：US11317598

    申请日：2005-12-23

    申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

    发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/49021

    摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

    摘要翻译： 已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。 这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

    Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
    6.
    发明授权
    Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications 有权
    Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度

    公开(公告)号：US07672088B2

    公开(公告)日：2010-03-02

    申请号：US11472126

    申请日：2006-06-21

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

    摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个另外的FeCo层，以得到由FeCo / [HA / IL] nHA，[HA / IL] nHA / FeCo或FeCo / [HA / IL] nHA / FeCo表示的构型，其中 n是整数≥1，HA是Heusler合金层，IL是插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co2MnSi可以与Al或FeCo靶或Co2MnAl或Co2FeSi靶共溅射。

    Ultra thin seed layer for CPP or TMR structure
    7.
    发明授权
    Ultra thin seed layer for CPP or TMR structure 有权
    用于CPP或TMR结构的超薄种子层

    公开(公告)号：US07646568B2

    公开(公告)日：2010-01-12

    申请号：US11317598

    申请日：2005-12-23

    申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

    发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/49021

    摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

    摘要翻译： 已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。 这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

    Magnetoresistive spin valve sensor with tri-layer free layer
    8.
    发明授权
    Magnetoresistive spin valve sensor with tri-layer free layer 有权
    具有三层自由层的磁阻自旋阀传感器

    公开(公告)号：US07333306B2

    公开(公告)日：2008-02-19

    申请号：US11209231

    申请日：2005-08-23

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

    摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

    摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
    10.
    发明申请
    Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
    具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器

    公开(公告)号：US20070111332A1

    公开(公告)日：2007-05-17

    申请号：US11280523

    申请日：2005-11-16

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

    摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1欧姆 - 欧姆的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。