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    Method for making a silicon quantum dot fluorescent lamp
    14.
    发明授权
    Method for making a silicon quantum dot fluorescent lamp 有权
    硅量子点荧光灯的制造方法

    公开(公告)号：US07896723B2

    公开(公告)日：2011-03-01

    申请号：US11976444

    申请日：2007-10-24

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC分类号： H01J9/00

    CPC分类号： H01J63/06 ,  H01J63/04

    摘要： A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

    摘要翻译： 通过在阴极组件和阳极组件之间提供高电压源来制造硅量子点荧光灯。 阴极组件通过提供第一衬底，在第一衬底上涂覆缓冲层，在缓冲层上涂覆催化层并在催化层上提供多个纳米放电元件来制造。 阳极组件通过提供第二衬底制造，在第二衬底上涂覆硅量子点荧光膜并在硅量子点荧光膜上涂覆金属膜。

    Process for making multi-crystalline silicon thin-film solar cells
    16.
    发明申请
    Process for making multi-crystalline silicon thin-film solar cells 有权
    制造多晶硅薄膜太阳能电池的工艺

    公开(公告)号：US20110003425A1

    公开(公告)日：2011-01-06

    申请号：US12007154

    申请日：2008-01-07

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02168 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p− type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p− type light-soaking film to form an n+ type emitter. Thus, an n+-p−-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p−-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p−-p+ laminate is etched in a patterned mask process. A p− type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n− type ohmic contact is formed on the n+ type emitter.

    摘要翻译： 将二氯硅烷和乙硼烷沉积在钛基合金膜上以生长p +型背表面场膜。 升高温度以在p +型背表面场膜上生长p型光均热膜。 磷化氢沉积在p型光浸膜上以形成n +型发射极。 因此，在钛基合金膜上设置n + -p-p +层叠体。 SiCNO：使用Ar等离子体钝化n + -p-p +层压体，从而在n +型发射体上形成SiCN / SiO2的防反射膜。 在图案化掩模工艺中蚀刻n + -p-p +层压体。 在钛基合金膜上形成p型欧姆接触。 在图案化掩模工艺中蚀刻抗反射膜。 n +型发射体涂覆有在氢气中退火的钛/钯/银合金膜。 在n +型发射极上形成n型欧姆接触。

    Method for making multi-cystalline film of solar cell
    17.
    发明申请
    Method for making multi-cystalline film of solar cell 审中-公开
    制造太阳能电池多晶硅膜的方法

    公开(公告)号：US20100216278A1

    公开(公告)日：2010-08-26

    申请号：US11976916

    申请日：2007-10-29

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L21/20

    CPC分类号： H01L31/03921 ,  C23C16/24 ,  H01L31/022425 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a multi-crystalline silicon film of a solar cell. In the method, a titanium-based film is coated on a ceramic substrate. A back surface field layer is coated on the titanium-based film via providing dichlorosilane and diborane in an atmospheric pressure chemical vapor deposition process at a first temperature. A light-soaking layer is coated on the back surface field layer via providing more dichlorosilane and diborane in the atmospheric pressure chemical vapor deposition process at a second temperature higher than the first temperature.

    摘要翻译： 公开了制造太阳能电池的多晶硅膜的方法。 在该方法中，将钛基膜涂覆在陶瓷基板上。 通过在大气压化学气相沉积工艺中在第一温度下提供二氯硅烷和乙硼烷，将背表面场层涂覆在钛基膜上。 在大气压化学气相沉积工艺中，在高于第一温度的第二温度下，通过提供更多的二氯硅烷和乙硼烷，在背表面场层上涂覆均热层。

    Pulsed high-voltage silicon quantum dot fluorescent lamp
    18.
    发明申请
    Pulsed high-voltage silicon quantum dot fluorescent lamp 有权
    脉冲高压硅量子点荧光灯

    公开(公告)号：US20100216266A1

    公开(公告)日：2010-08-26

    申请号：US11898344

    申请日：2007-09-11

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC分类号： H01L33/44

    CPC分类号： H01J9/223 ,  H01J63/06

    摘要： In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

    摘要翻译： 在制造脉冲高压硅量子点荧光灯的方法中，通过提供第一衬底，用钛的缓冲层涂覆第一衬底来制造激发源，用选择的材料的催化层涂覆缓冲层 由镍，铝和铂组成的一组，并提供多个纳米排放元件，一个催化层。 通过提供第二基板来制造发光源，用氮化钛的透明电极膜涂覆第二基板，并且用包含硅量子点的硅量子点荧光膜涂覆透明电极膜。 在激发源和发射源之间提供脉冲高压源以产生脉冲场效应电场，以使纳米放电元件释放电子并加速电子以激发硅量子点发射脉冲的可见光。

    In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer
    19.
    发明授权
    In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer 失效
    用于从升级的冶金级硅晶片的表面和内部去除金属杂质的原位吸气方法

    公开(公告)号：US08685840B2

    公开(公告)日：2014-04-01

    申请号：US13313124

    申请日：2011-12-07

    申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221

    摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

    摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。

    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer
    20.
    发明申请
    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer 失效
    用于从表面和内部升级的冶金级硅晶片上去除金属杂质的原位吸气方法

    公开(公告)号：US20130149843A1

    公开(公告)日：2013-06-13

    申请号：US13313124

    申请日：2011-12-07

    申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221

    摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

    摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。