公开(公告)号：US20150357190A1

公开(公告)日：2015-12-10

申请号：US14312707

申请日：2014-06-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-Cheng Chien ,  Hsin-Kuo Hsu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L21/02 ,  H01L29/36 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/66795 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/36 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7853

Abstract: A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.

Abstract translation: 公开了一种具有鳍状结构的半导体器件。 半导体器件包括：衬底; 基板上的鳍状结构; 以及在鳍状结构的顶表面和侧壁的一部分上的外延层，其中外延层和鳍状结构在其间包括锗浓度的线性梯度。

公开(公告)号：US20150333000A1

公开(公告)日：2015-11-19

申请号：US14279602

申请日：2014-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Kuo Hsu ,  Li-Chieh Hsu ,  Hsiang-Hao Chen ,  Chung-Wei Hsueh

IPC: H01L23/528 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Abstract translation: 提供一种制造半导体器件的方法和使用其制造的器件。 根据本实施例，提供了形成有电介质层的基板。 在电介质层中限定多个沟槽，并且通过电介质层隔离沟槽。 在沟槽中形成第一阻挡层作为沟槽的阻挡层，然后用导体填充沟槽。 然后，沟槽中的导体被部分地去除以形成多个凹槽，其中保留的导体具有平坦的表面。 接下来，在凹槽中形成第二阻挡层作为沟槽的阻挡盖。