公开(公告)号：US20160308031A1

公开(公告)日：2016-10-20

申请号：US15196848

申请日：2016-06-29

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L29/66795 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28017 ,  H01L21/31116 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/7851

摘要： A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.

公开(公告)号：US09461147B2

公开(公告)日：2016-10-04

申请号：US14562782

申请日：2014-12-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu ,  Yen-Liang Wu

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/31116 ,  H01L29/6656 ,  H01L29/7848 ,  H01L29/785

摘要： The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the top surface of the fin structure which is not covered by the gate structure is defined as a second top surface. The first top surface is higher than the second top surface, and a spacer covers the sidewalls of the gate structure. The spacer includes an inner spacer and an outer spacer, and the outer pacer further contacts the second top surface of the fin structure directly.

摘要翻译： 本发明提供一种半导体结构，其包括具有设置在其上的翅片结构的基板，栅极结构，跨越鳍片结构的一部分。 由栅极结构覆盖的翅片结构的上表面被定义为第一顶表面，并且未被栅极结构覆盖的翅片结构的顶表面被定义为第二顶表面。 第一顶表面高于第二顶表面，间隔件覆盖栅结构的侧壁。 间隔件包括内隔离件和外间隔件，并且外起重器还直接接触翅片结构的第二顶表面。

公开(公告)号：US20160163797A1

公开(公告)日：2016-06-09

申请号：US14594159

申请日：2015-01-11

申请人： UNITED MICROELECTRONICS CORP.

发明人： Wen-Jiun Shen ,  Chia-Jong Liu ,  Chung-Fu Chang ,  Yen-Liang Wu ,  Man-Ling Lu ,  Yi-Wei Chen ,  Jhen-Cyuan Li

IPC分类号： H01L29/08 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/785 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7847

摘要： The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.

摘要翻译： 本发明提供一种半导体结构，其包括衬底，栅极结构，源极/漏极区域和至少位错。 栅极结构设置在基板上。 源极/漏极区域在栅极结构的两侧设置在衬底中。 位错位于源极/漏极区域中，并且与源极/漏极区域的中间轴线不对称。

公开(公告)号：US08980701B1

公开(公告)日：2015-03-17

申请号：US14071672

申请日：2013-11-05

申请人： United Microelectronics Corp.

发明人： Shui-Yen Lu ,  Chih-Ho Wang ,  Jhen-Cyuan Li

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423 ,  H01L21/84

CPC分类号： H01L29/66795 ,  H01L21/0212 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/845

摘要： A method of forming a semiconductor device includes the following steps. At least a fin structure is provided on a substrate and a gate structure partially overlapping the fin structure is formed. Then, a dielectric layer is formed on the substrate. Subsequently, a first etching process is performed to remove apart of the dielectric layer to form a first spacer surrounding the gate structure and a second spacer surrounding a sidewall of the fin structure, and a protective layer is formed in-situ to cover the gate structure and the first spacer. Finally, a second etching process is performed to remove a part of the protective layer and totally remove the second spacer.

摘要翻译： 形成半导体器件的方法包括以下步骤。 至少在基板上设置翅片结构，并且形成部分地与翅片结构重叠的栅极结构。 然后，在基板上形成电介质层。 随后，执行第一蚀刻工艺以除去电介质层的间隔，以形成围绕栅极结构的第一间隔件和围绕鳍结构的侧壁的第二间隔件，并且保护层原位形成以覆盖栅极结构 和第一间隔物。 最后，执行第二蚀刻工艺以去除保护层的一部分并完全去除第二间隔物。

公开(公告)号：US09761697B2

公开(公告)日：2017-09-12

申请号：US15196848

申请日：2016-06-29

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L29/165

CPC分类号： H01L29/66795 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28017 ,  H01L21/31116 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/7851

摘要： A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.

公开(公告)号：US20170243954A1

公开(公告)日：2017-08-24

申请号：US15047636

申请日：2016-02-19

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Sheng-Hsu Liu ,  Shui-Yen Lu

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/08

CPC分类号： H01L29/66795 ,  H01L21/26513 ,  H01L29/7848

摘要： A method of forming a FinFET device includes following steps. First of all, a fin shaped structure is formed on a substrate. Then, a portion of the fin shaped structure is removed to form a first trench in the fin shaped structure. Next, a cover film is formed to partially cover surfaces of the first trench and to expose a portion of the fin shaped structure. Afterward, the exposed portion of the fin shaped structure is further removed to form a second trench under the first trench. Finally, a barrier layer is formed on surfaces of the second trench, thereby improving the current leakage issues.

公开(公告)号：US09627538B2

公开(公告)日：2017-04-18

申请号：US14509449

申请日：2014-10-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yen-Liang Wu ,  Yu-Cheng Tung ,  Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/762

CPC分类号： H01L29/7851 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7848

摘要： A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET includes a substrate having a top surface and an insulation. At least a recessed fin is extended upwardly from the top surface of the substrate, and at least a gate stack is formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack. The insulation includes a lateral portion adjacent to the recessed fin, and a central portion contiguous to the lateral portion, wherein a top surface of the lateral portion is higher than a top surface of the central portion. A top surface of the recessed fin is lower than the top surface of the central portion of the insulation.

公开(公告)号：US09419109B2

公开(公告)日：2016-08-16

申请号：US14556690

申请日：2014-12-01

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28017 ,  H01L21/31116 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/7851

摘要： A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.

摘要翻译： 半导体器件包括衬底，栅极结构和栅极间隔物。 衬底具有从衬底的表面突出的半导体鳍片。 栅极结构设置在半导体鳍片上。 栅极间隔物设置在栅极结构的侧壁上，其中栅极间隔物包括彼此堆叠的第一材料层和第二材料层，并且这两个材料层都直接与栅极结构接触。

公开(公告)号：US20160190011A1

公开(公告)日：2016-06-30

申请号：US14608208

申请日：2015-01-29

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L21/8234 ,  H01L21/311 ,  H01L21/762 ,  H01L23/29 ,  H01L29/06 ,  H01L27/088 ,  H01L23/31 ,  H01L21/02 ,  H01L29/78

CPC分类号： H01L21/823431 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： An epitaxial process includes the following step for forming a fin-shaped field effect transistor. A plurality of fin structures are formed on a substrate and a passivation layer is formed on the substrate between the fin structures. An epitaxial structure is formed on each of the fin structures. The present invention also provides an epitaxial structure formed by said epitaxial process. The epitaxial structure includes a plurality of fin structures, a passivation layer and an epitaxial structure. The fin structures are located on a substrate. The passivation layer is disposed on the substrate between the fin structures. The epitaxial structure is disposed on each of the fin structures.

摘要翻译： 外延工艺包括用于形成鳍状场效应晶体管的以下步骤。 在基板上形成多个翅片结构，并且在翅片结构之间的基板上形成钝化层。 在每个翅片结构上形成外延结构。 本发明还提供了由所述外延工艺形成的外延结构。 外延结构包括多个翅片结构，钝化层和外延结构。 翅片结构位于基底上。 钝化层设置在翅片结构之间的衬底上。 外延结构设置在每个翅片结构上。

公开(公告)号：US09685541B2

公开(公告)日：2017-06-20

申请号：US15247909

申请日：2016-08-25

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Shui-Yen Lu ,  Yen-Liang Wu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/311

CPC分类号： H01L29/66795 ,  H01L21/31116 ,  H01L29/6656 ,  H01L29/7848 ,  H01L29/785

摘要： The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the top surface of the fin structure which is not covered by the gate structure is defined as a second top surface. The first top surface is higher than the second top surface, and a spacer covers the sidewalls of the gate structure. The spacer includes an inner spacer and an outer spacer, and the outer pacer further contacts the second top surface of the fin structure directly.