公开(公告)号：US09263134B2

公开(公告)日：2016-02-16

申请号：US14215091

申请日：2014-03-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Nan Mou ,  Hsin-Pang Lu ,  Hsi-Wen Chen

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C8/08 ,  G11C8/10 ,  G11C8/14

CPC classification number: G11C16/08 ,  G11C8/08 ,  G11C8/10 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/10

Abstract: A non-volatile memory cell includes a plurality of rows of memory cells, a plurality of bit lines coupled to the plurality of rows of memory cells for accessing data to the plurality of rows of memory cells, a plurality of word lines each coupled to a corresponding row of memory cells, and a decoder coupled to the plurality of word lines for enabling at least one row of memory cells of the plurality of rows of memory cells.

Abstract translation: 非易失性存储单元包括多行存储单元，耦合到多行存储单元的多个位线，用于访问到多行存储单元的数据;多个字线，每个字线与 耦合到所述多个字线的解码器，用于使所述多行存储器单元中的至少一行存储器单元能够使用。

公开(公告)号：US20150262621A1

公开(公告)日：2015-09-17

申请号：US14215091

申请日：2014-03-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Nan Mou ,  Hsin-Pang Lu ,  Hsi-Wen Chen

IPC: G11C5/06 ,  G11C16/08

CPC classification number: G11C16/08 ,  G11C8/08 ,  G11C8/10 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/10

Abstract: A non-volatile memory cell includes a plurality of rows of memory cells, a plurality of bit lines coupled to the plurality of rows of memory cells for accessing data to the plurality of rows of memory cells, a plurality of word lines each coupled to a corresponding row of memory cells, and a decoder coupled to the plurality of word lines for enabling at least one row of memory cells of the plurality of rows of memory cells.

Abstract translation: 非易失性存储单元包括多行存储单元，耦合到多行存储单元的多个位线，用于访问到多行存储单元的数据;多个字线，每个字线与 耦合到所述多个字线的解码器，用于使所述多行存储器单元中的至少一行存储器单元能够使用。