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    SUPERABRASIVE ELEMENTS AND RELATED METHODS FOR PROCESSING AND MANUFACTURING USING PROTECTIVE LAYERS
    12.
    发明申请
    SUPERABRASIVE ELEMENTS AND RELATED METHODS FOR PROCESSING AND MANUFACTURING USING PROTECTIVE LAYERS 有权

    公开(公告)号：US20220388121A1

    公开(公告)日：2022-12-08

    申请号：US17890218

    申请日：2022-08-17

    Applicant: US Synthetic Corporation

    Inventor： David P. Miess ,  Andrew E. Dadson

    IPC: B24D3/00 ,  B24D18/00 ,  B24D99/00 ,  F16C33/04 ,  F16C33/26

    Abstract: A method of processing a polycrystalline diamond element includes forming a protective layer over a selected portion of a polycrystalline diamond element, the polycrystalline diamond element having a polycrystalline diamond table that includes a superabrasive face, a superabrasive side surface, and a chamfer extending between the superabrasive face and the superabrasive side surface. A portion of the superabrasive side surface is covered by the protective layer and the protective layer is not formed over the chamfer. The method includes exposing at least a portion of the polycrystalline diamond element to a leaching solution. A polycrystalline diamond element has a polycrystalline diamond table that includes a leached volume extending from the superabrasive face to a portion of the chamfer proximate to the superabrasive side surface, and the leached volume does not substantially extend along the superabrasive side surface.

    Superabrasive elements and methods for processing and manufacturing the same using protective layers
    18.
    发明授权
    Superabrasive elements and methods for processing and manufacturing the same using protective layers 有权

    公开(公告)号：US11420304B2

    公开(公告)日：2022-08-23

    申请号：US14864649

    申请日：2015-09-24

    Applicant: US Synthetic Corporation

    Inventor： David P. Miess ,  Andrew E. Dadson

    IPC: B24D3/00 ,  B24D18/00 ,  B24D99/00 ,  F16C33/04 ,  F16C33/26 ,  F16C17/04 ,  F16C17/02

    Abstract: A method of processing a polycrystalline diamond element includes forming a protective layer over a selected portion of a polycrystalline diamond element, the polycrystalline diamond element having a polycrystalline diamond table that includes a superabrasive face, a superabrasive side surface, and a chamfer extending between the superabrasive face and the superabrasive side surface. A portion of the superabrasive side surface is covered by the protective layer and the protective layer is not formed over the chamfer. The method includes exposing at least a portion of the polycrystalline diamond element to a leaching solution. A polycrystalline diamond element has a polycrystalline diamond table that includes a leached volume extending from the superabrasive face to a portion of the chamfer proximate to the superabrasive side surface, and the leached volume does not substantially extend along the superabrasive side surface.

    Polycrystalline diamond compact including a non-uniformly leached polycrystalline diamond table and applications therefor
    19.
    发明授权
    Polycrystalline diamond compact including a non-uniformly leached polycrystalline diamond table and applications therefor 有权

    公开(公告)号：US10920499B1

    公开(公告)日：2021-02-16

    申请号：US16445439

    申请日：2019-06-19

    Applicant: US SYNTHETIC CORPORATION

    Inventor： Mohammad N. Sani ,  Andrew E. Dadson

    IPC: E21B10/55 ,  B24D3/06 ,  B24D99/00

    Abstract: In an embodiment, a polycrystalline diamond compacts (“PDC”) includes a substrate and a polycrystalline diamond (“PCD”) table bonded to the substrate. The PCD table defines an upper surface and at least one peripheral surface. The PCD table includes a plurality of bonded diamond grains. The PCD table includes a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof, and a leached second region extending inwardly from the upper surface and the at least one peripheral surface that is depleted of the metallic constituent. The leached second region exhibits a leach depth profile having a maximum leach depth that is measured from the upper surface. A leach depth of the leach depth profile decreases with lateral distance from a central axis of the PCD table and toward the at least one peripheral surface.

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