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公开(公告)号：US20230380296A1
公开(公告)日：2023-11-23
申请号：US18230189
申请日：2023-08-04
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiu-Jung Chiu , Ya-Sheng Feng , I-Ming Tseng , Yi-An Shih , Yu-Chun Chen , Yi-Hui Lee , Chung-Liang Chu , Hsiu-Hao Hu
Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
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公开(公告)号：US11765983B2
公开(公告)日：2023-09-19
申请号：US17972542
申请日：2022-10-24
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiu-Jung Chiu , Ya-Sheng Feng , I-Ming Tseng , Yi-An Shih , Yu-Chun Chen , Yi-Hui Lee , Chung-Liang Chu , Hsiu-Hao Hu
Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
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公开(公告)号：US20230040932A1
公开(公告)日：2023-02-09
申请号：US17972542
申请日：2022-10-24
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiu-Jung Chiu , Ya-Sheng Feng , I-Ming Tseng , Yi-An Shih , Yu-Chun Chen , Yi-Hui Lee , Chung-Liang Chu , Hsiu-Hao Hu
Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
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公开(公告)号：US11515471B2
公开(公告)日：2022-11-29
申请号：US16988707
申请日：2020-08-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiu-Jung Chiu , Ya-Sheng Feng , I-Ming Tseng , Yi-An Shih , Yu-Chun Chen , Yi-Hui Lee , Chung-Liang Chu , Hsiu-Hao Hu
Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
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公开(公告)号：US20220302374A1
公开(公告)日：2022-09-22
申请号：US17835986
申请日：2022-06-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , JUN XIE
Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
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Patent Agency Ranking
公开(公告)号：US20210111334A1
公开(公告)日：2021-04-15
申请号：US17131767
申请日：2020-12-23
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , JUN XIE
Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
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公开(公告)号：US20210020828A1
公开(公告)日：2021-01-21
申请号：US16531129
申请日：2019-08-05
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , JUN XIE
Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
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公开(公告)号：US20200373478A1
公开(公告)日：2020-11-26
申请号：US16438480
申请日：2019-06-12
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hui-Lin Wang , Chen-Yi Weng , Yi-Wei Tseng , Chin-Yang Hsieh , Jing-Yin Jhang , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , I-Ming Tseng , Yu-Ping Wang
Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
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公开(公告)号：US12156408B2
公开(公告)日：2024-11-26
申请号：US18515289
申请日：2023-11-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Po-Wei Wang , Yi-An Shih , Huan-Chi Ma
Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.
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公开(公告)号：US20240357943A1
公开(公告)日：2024-10-24
申请号：US18760005
申请日：2024-06-30
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiu-Jung Chiu , Ya-Sheng Feng , I-Ming Tseng , Yi-An Shih , Yu-Chun Chen , Yi-Hui Lee , Chung-Liang Chu , Hsiu-Hao Hu
Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
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