摘要:
An exhaust system for exhausting gases and molten debris caused by an electric arc within a switchgear. The exhaust system includes a switchgear having lower and upper compartments and an exhaust unit externally mounted to the switchgear. A wall panel of the switchgear includes blow out panels coinciding with openings in the lower compartment and corresponding ventilation flaps in a top surface of the exhaust unit to exhaust gas from the lower compartment out the blow out panels in a vertical direction, exiting through the flaps. The upper compartment includes ventilation flaps for exhausting gas in a vertical direction directly through the flaps and optionally through side-mounted blow out panels that communicate with the vertical vent path to the flaps in the top of the exhaust unit. A bus compartment in the exhaust unit includes a vent path to flaps in the top of the exhaust unit for exhausting gas produced by bus arcing.
摘要:
A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a resistive-switching element, a third layer above the second layer including a second conductive electrode, where a first stress is created in the switching element at a first interface between the first layer and the second layer upon heating the memory element, and where a second stress is created in the switching element at a second interface between the second layer and the third layer upon the heating. A stress gradient equal to a difference between the first stress and the second stress has an absolute value greater than 50 MPa, and a reset voltage of the memory element has a polarity relative to a common electrical potential that has a sign opposite the stress gradient when applied to the first conductive electrode
摘要:
This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution.
摘要:
The present invention relates to a VCSEL device comprising an optical gain medium (8) arranged between a first DBR (9) and a second DBR (7). The first and the second DBR form a laser cavity and are designed to allow self-contained lasing in the laser cavity, said second DBR (7) being partially transparent for laser radiation resonating in the laser cavity. An optical element is arranged on a side of the second DBR (7) outside of the laser cavity on the optical axis of the laser cavity. The optical element has a concave surface (5) facing the second DBR (7) and being designed to reflect a portion of laser radiation emitted through the second DBR (7) back into the laser cavity. The ratio R/d of the radius of curvature R of the concave surface (5) and the distance d between the concave surface (5) and the gain medium (8) is in the range between 1 and 2. With the proposed VCSEL device a high power output with an improved mode distribution and mode stabilization is achieved.
摘要:
A device for use in a shower head that discharges a fluid, such as water, has a plurality of nozzles, each nozzle having an opening for discharging the fluid and a plurality of apertures spaced away from the opening having a bore through which the fluid flows, and a face through which the opening extends. The nozzles each create droplets that are large enough to retain heat and moving slowly enough to minimize irritation to a user.
摘要:
A method and apparatus for enhancing the integrity of an implantable sensor. Voids formed between an outer tubing and a sensor substrate or spacing element may be back-filled with a curable, implantable material, minimizing the extent to which unwanted fluids diffuse within the sensor. An enzyme or protein matrix pellet below the sensor window may be pre-treated with a reducing agent to enhance its bond stability, and to reduce undesired swelling that may cause the sensor window to detach or leak. The bonding between the enzyme pellet and a hydrogel layer may be reinforced by application of an intervening bonding layer of a protein material, such as human serum albumin (HSA). The size of the window may be minimized by minimizing the size of an underlying electrode, providing reduced flux and lengthening sensor. A coating may be deposited on the surface of the sensor leads, providing stiffening and lubrication.