公开(公告)号：US20180230596A1

公开(公告)日：2018-08-16

申请号：US15947352

申请日：2018-04-06

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01L21/02 ,  C30B29/06 ,  C30B25/16 ,  C23C16/46

CPC classification number: C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：US20140224178A1

公开(公告)日：2014-08-14

申请号：US14255016

申请日：2014-04-17

Applicant: Veeco Instruments Inc.

Inventor： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC: C30B25/12 ,  C30B25/08

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract translation: 在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。 指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得基底的部分 与轴（14）不同距离的表面每单位面积接收基本相同量的反应气体（4）。 在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US20230060609A1

公开(公告)日：2023-03-02

申请号：US17462990

申请日：2021-08-31

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Bojan Mitrovic ,  Eric A. Armour ,  Yuliy Rashkovsky ,  Robert S. Maxwell, IV ,  Matthew J. Van Doren

IPC: H01L21/677 ,  H01L21/205 ,  H01L21/687 ,  C23C16/46

Abstract: A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.