公开(公告)号：US20130062671A1

公开(公告)日：2013-03-14

申请号：US13420559

申请日：2012-03-14

申请人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

发明人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

IPC分类号： H01L29/78

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

公开(公告)号：US09082691B2

公开(公告)日：2015-07-14

申请号：US13619560

申请日：2012-09-14

申请人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。

公开(公告)号：US08860090B2

公开(公告)日：2014-10-14

申请号：US13420559

申请日：2012-03-14

申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

公开(公告)号：US20110272708A1

公开(公告)日：2011-11-10

申请号：US13052881

申请日：2011-03-21

申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

IPC分类号： H01L29/205 ,  H01L29/22

CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

公开(公告)号：US20070051977A1

公开(公告)日：2007-03-08

申请号：US11507493

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

发明人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC分类号： H01L31/00 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

摘要翻译： 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

公开(公告)号：US07498618B2

公开(公告)日：2009-03-03

申请号：US11507493

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

发明人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

摘要翻译： 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

公开(公告)号：US08575656B2

公开(公告)日：2013-11-05

申请号：US13605814

申请日：2012-09-06

申请人： Akira Yoshioka ,  Yasunobu Saito ,  Wataru Saito

发明人： Akira Yoshioka ,  Yasunobu Saito ,  Wataru Saito

IPC分类号： H01L31/06 ,  H01L29/66

CPC分类号： H01L29/475 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0676 ,  H01L27/0688 ,  H01L27/0727 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/872

摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.

摘要翻译： 根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。 第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。 第二半导体层被设置为与第一半导体层间隔开。 第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。 第四半导体层使第一和第二半导体层绝缘。 第一电极与第一至第三半导体层形成欧姆结。 第二电极设置在第三半导体层上。 栅电极设置在第一和第二电极之间。 第三电极与第一半导体层形成肖特基结。

公开(公告)号：US07157749B2

公开(公告)日：2007-01-02

申请号：US11053548

申请日：2005-02-09

申请人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

发明人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/267 ,  H01L29/1004 ,  H01L29/7371

摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.

摘要翻译： 提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域 与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。 双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层， 形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

公开(公告)号：US20050189565A1

公开(公告)日：2005-09-01

申请号：US11053548

申请日：2005-02-09

申请人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

发明人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/22 ,  H01L29/267 ,  H01L29/737

CPC分类号： H01L29/267 ,  H01L29/1004 ,  H01L29/7371

摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.

摘要翻译： 提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域 与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。 双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层， 形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

公开(公告)号：US08334132B2

公开(公告)日：2012-12-18

申请号：US12514000

申请日：2007-11-09

申请人： Kosuke Oishi ,  Eiji Sato ,  Hiroyuki Mori ,  Akira Yoshioka

发明人： Kosuke Oishi ,  Eiji Sato ,  Hiroyuki Mori ,  Akira Yoshioka

IPC分类号： C12P41/00

CPC分类号： C07C227/12 ,  C12P13/007 ,  C07C229/22

摘要： According to the present invention, by using 4-halogeno-3-hydroxybutanamide as a substrate in quaternary amination reaction with trialkylamine which is an important step in betaine (such as carnitine) preparation processes, it becomes possible to reduce the production of crotonic acid derivatives (the major by-product) greatly compared to conventional processes. Consequently, it becomes possible to prepare a betaine, such as carnitine, at a high yield.

摘要翻译： 根据本发明，通过在作为甜菜碱（例如肉碱）制备方法中的重要步骤的三烷基胺的季胺化反应中使用4-卤代-3-羟基丁酰胺作为底物，可以减少巴豆酸衍生物的生产 （主要副产品）与常规工艺相比大大增加。 因此，可以以高收率制备甜菜碱，如肉毒碱。