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    Bipolar transistor and method of manufacturing the same
    1.
    发明申请
    Bipolar transistor and method of manufacturing the same 失效
    双极晶体管及其制造方法

    公开(公告)号：US20050189565A1

    公开(公告)日：2005-09-01

    申请号：US11053548

    申请日：2005-02-09

    申请人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

    发明人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

    IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/22 ,  H01L29/267 ,  H01L29/737

    CPC分类号： H01L29/267 ,  H01L29/1004 ,  H01L29/7371

    摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.

    摘要翻译： 提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域 与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。 双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层， 形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

    Bipolar transistor with a GaAs substrate and a SiGe base or collector
    2.
    发明授权
    Bipolar transistor with a GaAs substrate and a SiGe base or collector 失效
    具有GaAs衬底和SiGe基极或集电极的双极晶体管

    公开(公告)号：US07157749B2

    公开(公告)日：2007-01-02

    申请号：US11053548

    申请日：2005-02-09

    申请人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

    发明人： Hidetoshi Fujimoto ,  Tetsuro Nozu ,  Yoshitomo Sagae ,  Akira Yoshioka

    IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/267 ,  H01L29/1004 ,  H01L29/7371

    摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.

    摘要翻译： 提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域 与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。 双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层， 形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

    Nitride semiconductor device and method for manufacturing same
    3.
    发明授权
    Nitride semiconductor device and method for manufacturing same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US08759878B2

    公开(公告)日：2014-06-24

    申请号：US13238684

    申请日：2011-09-21

    申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

    NITRIDE SEMICONDUCTOR DEVICE
    4.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号：US20130062671A1

    公开(公告)日：2013-03-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    发明人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

    Nitride semiconductor device
    9.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US09082691B2

    公开(公告)日：2015-07-14

    申请号：US13619560

    申请日：2012-09-14

    申请人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

    CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

    摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

    摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US08860090B2

    公开(公告)日：2014-10-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。