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11.发明授权Polysilane compositions, methods for their synthesis and films formed therefrom 有权聚硅烷组合物，其合成方法和由其形成的薄膜公开(公告)号：US07485691B1
公开(公告)日：2009-02-03
申请号：US11246014
申请日：2005-10-06
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c-AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）> = 10，如果n = 0，则q> = 3，如果n和q <0，则（n + q）> = 6。 p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。
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12.发明授权Polysilane compositions, methods for their synthesis and films formed therefrom 有权聚硅烷组合物，其合成方法和由其形成的薄膜公开(公告)号：US08057865B1
公开(公告)日：2011-11-15
申请号：US11893140
申请日：2007-08-14
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c—AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, Halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′h and/or the formula c—AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R为H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。
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13.发明授权Polysilane compositions, methods for their synthesis and films formed therefrom 有权聚硅烷组合物，其合成方法和由其形成的薄膜公开(公告)号：US08236916B1
公开(公告)日：2012-08-07
申请号：US12343200
申请日：2008-12-23
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。
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14.发明授权Polysilane compositions, methods for their synthesis and films formed therefrom 有权聚硅烷组合物，其合成方法和由其形成的薄膜公开(公告)号：US07723457B1
公开(公告)日：2010-05-25
申请号：US12347911
申请日：2008-12-31
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1fm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 在一方面，该方法通常包括以下步骤：将式AHaR14-a的硅烷化合物，式AkHgR1'h和/或式c-AmHpmR1fm与式R4xR5yMXz的催化剂 （或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。 通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛， 有或没有使用紫外线照射。
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公开(公告)号：US08603426B1
公开(公告)日：2013-12-10
申请号：US13730432
申请日：2012-12-28
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B21/068
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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16.发明授权Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers 有权硅聚合物，聚合硅化合物的方法以及从这种硅聚合物形成薄膜的方法公开(公告)号：US08461284B2
公开(公告)日：2013-06-11
申请号：US13299318
申请日：2011-11-17
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译： 含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。
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17.发明授权Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom 有权硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构公开(公告)号：US08367031B1
公开(公告)日：2013-02-05
申请号：US13349838
申请日：2012-01-13
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B31/36
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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18.发明授权Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers 有权硅聚合物，聚合硅化合物的方法，以及从这种硅聚合物形成薄膜的方法公开(公告)号：US08092867B2
公开(公告)日：2012-01-10
申请号：US11867587
申请日：2007-10-04
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译： 含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。
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公开(公告)号：US08124040B1
公开(公告)日：2012-02-28
申请号：US12858327
申请日：2010-08-17
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B31/36
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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20.发明授权Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom 有权硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构公开(公告)号：US07799302B1
公开(公告)日：2010-09-21
申请号：US11934734
申请日：2007-11-02
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B33/26
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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