公开(公告)号：US20090325106A1

公开(公告)日：2009-12-31

申请号：US12147889

申请日：2008-06-27

申请人： Willard E. Conley ,  Terry G. Sparks ,  William J. Taylor, JR.

发明人： Willard E. Conley ,  Terry G. Sparks ,  William J. Taylor, JR.

IPC分类号： H01L21/02

CPC分类号： H01L21/0332 ,  H01L21/2652 ,  H01L29/78

摘要： A semiconductor fabrication method that includes forming a patterned mask (62, 72) by spin coating a developable hard mask layer (32) and a resist layer (42) over a semiconductor substrate (4). Subsequently, the resist layer (42) is exposed and developed to form a patterned resist layer (62), where the development step also removes the underlying hard mask layer (32), thereby forming a patterned mask (62, 72) which defines a void or printed feature to expose a region (97) over the semiconductor substrate which may be implanted, etched or otherwise processed.

摘要翻译： 一种半导体制造方法，包括通过在半导体衬底（4）上旋涂可显影硬掩模层（32）和抗蚀剂层（42）来形成图案化掩模（62,72）。 随后，曝光和显影抗蚀剂层（42）以形成图案化的抗蚀剂层（62），其中显影步骤还去除下面的硬掩模层（32），由此形成图案化掩模（62,72），其限定了 空隙或印刷特征以暴露可以被植入，蚀刻或以其他方式处理的半导体衬底上的区域（97）。

公开(公告)号：US20090274982A1

公开(公告)日：2009-11-05

申请号：US12112058

申请日：2008-04-30

申请人： Willard E. Conley

发明人： Willard E. Conley

IPC分类号： G03F7/26

CPC分类号： H01L21/31144 ,  G03F7/091 ,  H01L21/76802

摘要： Negative photoresist over an insulating layer is exposed to radiation according to a pattern for an opening in the insulating layer for filling conductive material. A post of the negative photoresist is left over the location where the opening in the insulating layer is to be formed. A developable hard mask is formed over the post by a spin-on process so that the hard mask over the post is much thinner than directly over the insulating layer. An etch back is performed to remove the hard mask from over the post so that the post of negative photoresist is thus exposed. The post is removed to form an opening in the hard mask. An etch is performed to form the opening in the insulating layer aligned to the opening in the hard mask. The opening in the insulating layer is filled with the conductive material.

摘要翻译： 根据用于填充导电材料的绝缘层中的开口的图案将绝缘层上的负光致抗蚀剂暴露于辐射。 负光致抗蚀剂的柱留在要形成绝缘层中的开口的位置。 通过旋涂工艺在柱上形成可显影的硬掩模，使得柱上的硬掩模比直接在绝缘层上方薄得多。 执行回蚀以从柱上移除硬掩模，使得负光致抗蚀剂的柱由此暴露。 去除柱子以形成硬掩模中的开口。 执行蚀刻以在与硬掩模中的开口对准的绝缘层中形成开口。 绝缘层中的开口填充有导电材料。

公开(公告)号：US06300035B1

公开(公告)日：2001-10-09

申请号：US09128797

申请日：1998-08-04

申请人： James W. Thackeray ,  Peter R. Hagerty ,  James F. Cameron ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Willard E. Conley

发明人： James W. Thackeray ,  Peter R. Hagerty ,  James F. Cameron ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Willard E. Conley

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  Y10S430/111

摘要： Photoresist compositions are provided comprising 1) a resin binder having photoacid-labile groups, 2) an acid generator and 3) a photospeed control agent. Photoresists of the invention exhibit good photospeed and can provide highly resolved relief images of small dimensions, including lines of sub-micron and sub-half micron dimensions with at least essentially vertical side walls. Methods are also provided that include control of photospeed of a photoresist composition of the invention.

摘要翻译： 提供的光致抗蚀剂组合物包括1）具有光酸不稳定基团的树脂粘合剂，2）酸发生剂和3）感光控制剂。 本发明的光刻胶表现出良好的感光速度，并且可以提供小尺寸的高度分辨的浮雕图像，包括具有至少基本上垂直的侧壁的亚微米级和次半微米尺寸的线。 还提供了包括控制本发明的光致抗蚀剂组合物的光速的方法。

公开(公告)号：US4828964A

公开(公告)日：1989-05-09

申请号：US93360

申请日：1987-09-04

申请人： William R. Brunsvold ,  Willard E. Conley ,  Scott L. Jacobs ,  George L. Mack ,  David P. Merritt ,  Ann M. Uptmor

发明人： William R. Brunsvold ,  Willard E. Conley ,  Scott L. Jacobs ,  George L. Mack ,  David P. Merritt ,  Ann M. Uptmor

IPC分类号： G03F7/09

CPC分类号： G03F7/094 ,  G03F7/091

摘要： A composition for use in a process for the deposition of patterned thin metal films on integrated circuit substrates, the composition comprising an admixture of a thermoplastic polyimide resin and a coumarin dye dissolved in a substituted phenol solvent. Optionally a polar solvent having a boiling point greater than 160.degree. C. and a low boiling organic compound (70.degree.-150.degree. C.) may be incorporated in the composition.

摘要翻译： 一种用于在集成电路基板上沉积图案化的金属薄膜的方法的组合物，该组合物包含溶解在取代的苯酚溶剂中的热塑性聚酰亚胺树脂和香豆素染料的混合物。 任选地，可以将沸点大于160℃的极性溶剂和低沸点有机化合物（70-150℃）并入组合物中。

公开(公告)号：US07883829B2

公开(公告)日：2011-02-08

申请号：US12184438

申请日：2008-08-01

申请人： Steven J. Holmes ,  Xuefeng Hua ,  Willard E. Conley

发明人： Steven J. Holmes ,  Xuefeng Hua ,  Willard E. Conley

IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/40

CPC分类号： H01L21/0337 ,  H01L21/0338

摘要： In one embodiment, a photoresist is lithographically patterned to form an array of patterned photoresist portions having a pitch near twice a minimum feature size. Fluorine-containing polymer spacers are formed on sidewalls of the patterned photoresist portions. The pattern of the fluorine-containing polymer spacers is transferred into an underlying layer to form a pattern having a sublithographic pitch. In another embodiment, a first pattern in a first photoresist is transferred into a first ARC layer underneath to form first ARC portions. A planarizing second optically dense layer, a second ARC layer, and a second photoresist are applied over the first ARC portions. A second pattern in the second photoresist is transferred into the second ARC layer to form second ARC portions. The combination of the first ARC portions and second ARC portions function as an etch mask to pattern an underlying layer with a composite pattern having a sublithographic pitch.

摘要翻译： 在一个实施例中，光刻胶被图案化以形成具有接近两倍最小特征尺寸的间距的图案化光致抗蚀剂部分的阵列。 含氟聚合物间隔物形成在图案化的光致抗蚀剂部分的侧壁上。 将含氟聚合物间隔物的图案转移到下层中以形成具有亚光刻间距的图案。 在另一个实施例中，将第一光致抗蚀剂中的第一图案转移到下面的第一ARC层中以形成第一ARC部分。 在第一ARC部分上施加平坦化的第二光致密层，第二ARC层和第二光致抗蚀剂。 将第二光致抗蚀剂中的第二图案转移到第二ARC层中以形成第二ARC部分。 第一ARC部分和第二ARC部分的组合用作蚀刻掩模，以用具有亚光刻间距的复合图案来图案化下面的层。

公开(公告)号：US07741221B2

公开(公告)日：2010-06-22

申请号：US11302769

申请日：2005-12-14

申请人： Ruiqi Tian ,  Willard E. Conley ,  Mehul D. Shroff

发明人： Ruiqi Tian ,  Willard E. Conley ,  Mehul D. Shroff

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0334 ,  H01L21/31053 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/32139 ,  Y10S438/926

摘要： A method for forming a semiconductor device includes providing a plurality of features in a layout, selecting critical features from the plurality of features, placing a first plurality of short-range dummy etch features in the layout at a first distance from the critical features to increase the feature density near the critical features, wherein each of the first plurality of short-range dummy etch features has a first width, removing at least one of the first plurality of short-range dummy etch features from the layout that will subsequently interfere with the electrical performance of at least one active feature so that a second plurality of short-range dummy etch features remains, and using the layout to pattern a layer on a semiconductor substrate.

摘要翻译： 一种用于形成半导体器件的方法包括在布局中提供多个特征，从多个特征中选择关键特征，将布置中的第一多个短距离虚拟蚀刻特征放置在离关键特征的第一距离处以增加 临界特征附近的特征密度，其中第一多个短距离虚拟蚀刻特征中的每一个具有第一宽度，从布局去除第一多个短程虚拟蚀刻特征中的至少一个，随后将干扰 至少一个有源特征的电性能，使得第二多个短距离虚拟蚀刻特征保留，并且使用布局来在半导体衬底上图案化。

公开(公告)号：US20100099255A1

公开(公告)日：2010-04-22

申请号：US12254338

申请日：2008-10-20

申请人： Willard E. Conley ,  Massud Abubaker Aminpur ,  Cesar M. Garza

发明人： Willard E. Conley ,  Massud Abubaker Aminpur ,  Cesar M. Garza

IPC分类号： H01L21/44

CPC分类号： H01L21/76816 ,  H01L21/31144

摘要： A method includes forming an insulating layer over a substrate, forming a masking layer over the insulating layer, forming a developable bottom anti-reflective coating (BARC) over the masking layer, forming a first photo resist layer over the developable BARC, exposing and developing portions of both the first photo resist layer and the developable BARC to form a first set of openings in the developable BARC, forming a second photo resist layer over the first set of openings and the developable BARC, exposing and developing portions of both the second photo resist layer and the developable BARC to form a second set of openings in the developable BARC, and extending each opening in the first and second set of openings through the masking layer and the insulating layer.

摘要翻译： 一种方法包括在衬底上形成绝缘层，在绝缘层上形成掩模层，在掩模层上形成可显影的底部抗反射涂层（BARC），在可显影的BARC上形成第一光刻胶层，曝光和显影 第一光致抗蚀剂层和可显影BARC的部分，以在可显影BARC中形成第一组开口，在第一组开口和可显影的BARC上形成第二光致抗蚀剂层，第二照片的曝光和显影部分 抗蚀剂层和可显影BARC以在可显影BARC中形成第二组开口，并且延伸穿过掩模层和绝缘层的第一和第二组开口中的每个开口。

公开(公告)号：US4939070A

公开(公告)日：1990-07-03

申请号：US215966

申请日：1988-07-07

申请人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

发明人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

IPC分类号： G03F7/039

CPC分类号： G03F7/039 ,  Y10S430/143 ,  Y10S430/168

摘要： The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

摘要翻译： 本发明公开了特定的平版印刷聚合物材料和使用这些材料的方法，其中聚合物材料具有垂直于聚合物主链的酸不稳定性或光不稳定性基团。 聚合物材料对于深紫外线辐射具有足够的透明度以允许深紫外成像，可用于生产在大于约160℃的温度下具有热稳定性的抗蚀剂结构，并且当加热至约 160℃至约250℃，它们仍溶于普通的平版印刷显影剂和剥离剂。 本发明还公开了包含取代的聚乙烯基苯甲酸酯的抗蚀剂，其在成像之后，在塑性流动方面表现出意想不到的高热稳定性。 这些抗蚀剂不能使用深紫外成像，因为它们在280nm以下表现出如此高的不透明度; 然而，它们可用作双层抗蚀剂工艺中的顶部成像层，其中顶层在底层的深紫外线曝光期间用作掩模。