公开(公告)号：US20100201043A1

公开(公告)日：2010-08-12

申请号：US12367654

申请日：2009-02-09

申请人： Frances A. Houle ,  Taiichi Furukawa

发明人： Frances A. Houle ,  Taiichi Furukawa

IPC分类号： B29C35/08 ,  C08L29/10

CPC分类号： C09D4/00

摘要： Coating compositions suitable for UV imprint lithographic applications are disclosed that include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; and at least one photoacid generator soluble in a selected one or both of the at least one monofunctional ether compound and the at least one vinyl ether compound, wherein the at least one monofunctional ether compound and the at least one vinyl ether compound are free from fluorine and silicon substituents. Also disclosed are imprint processes.

摘要翻译： 公开了适用于UV印迹光刻应用的涂料组合物，其包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 和至少一种可溶于所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物中选定的一种或两种的光致酸产生剂，其中所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物不含氟 和硅取代基。 还公开了压印过程。

公开(公告)号：US20090169663A1

公开(公告)日：2009-07-02

申请号：US11968603

申请日：2008-01-02

申请人： Frances A. Houle ,  Simone Raoux

发明人： Frances A. Houle ,  Simone Raoux

IPC分类号： B28B11/08 ,  B05D5/00 ,  B05C9/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/887

摘要： Amorphous inorganic oxides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Cu, Co, Sb, Ti, Ta, W and Ge.

摘要翻译： 无定形无机氧化物用作纳米压印光刻模板上的剥离层。 通过减少脱模层和固化的硬化组合物之间的粘附能，这种层有助于从固化的硬化组合物中释放模板，模板已转移到模板中。 剥离层可以包括一种或多种金属或半导体元件，例如Al，Cu，Co，Sb，Ti，Ta，W和Ge。

公开(公告)号：US08173331B2

公开(公告)日：2012-05-08

申请号：US12685491

申请日：2010-01-11

申请人： Jay S. Burnham ,  Frances A. Houle ,  Louis M. Kindt

发明人： Jay S. Burnham ,  Frances A. Houle ,  Louis M. Kindt

IPC分类号： G03F1/00

CPC分类号： G03F1/62 ,  G03F1/38 ,  G03F1/48

摘要： In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.

摘要翻译： 在一个实施例中，本发明是用于光掩模上的亚防护薄膜缺陷减少的方法和装置。 用于光刻的光掩模的一个实施例包括其上形成图案的基板，具有前侧和相对背面的基板以及形成在前侧和后侧中的至少一个上的保护涂层，保护涂层包括硅 基化合物。

公开(公告)号：US20110042862A1

公开(公告)日：2011-02-24

申请号：US12545161

申请日：2009-08-21

申请人： Frances A. Houle ,  Sally A. Swanson ,  Taiichi Furukawa

发明人： Frances A. Houle ,  Sally A. Swanson ,  Taiichi Furukawa

IPC分类号： B29C35/08 ,  B29C59/02 ,  G03F7/004

CPC分类号： G03F7/027 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.

摘要翻译： 适用于UV印迹光刻应用的涂料组合物包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 所述至少一种光致酸产生剂可溶于所述至少一种单官能乙烯基醚化合物和所述至少一种具有所述至少两个乙烯基醚基团的乙烯基醚交联剂中选定的一种或两种; 和至少一种稳定剂，其包含在酯位或α位选择性地被取代基取代的酯化合物。 还公开了压印过程。

公开(公告)号：US20090194502A1

公开(公告)日：2009-08-06

申请号：US12024985

申请日：2008-02-01

申请人： Frances A. Houle ,  Christopher V. Jahnes ,  Simone Raoux ,  Stephen M. Rossnagel

发明人： Frances A. Houle ,  Christopher V. Jahnes ,  Simone Raoux ,  Stephen M. Rossnagel

IPC分类号： B29C35/08 ,  B44C1/22 ,  B28B17/00

CPC分类号： B29C37/0067 ,  B29C35/0888 ,  B29C37/0053 ,  B29C43/003 ,  B29C43/021 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10S977/887

摘要： A morphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.

摘要翻译： 用于纳米压印光刻的模板上使用形态无机氮化物作为剥离层。 通过减少脱模层和固化的硬化组合物之间的粘附能，这种层有助于从固化的硬化组合物中释放模板，模板已转移到模板中。 剥离层可以包括一种或多种金属或半导体元件，例如Al，Mn，B，Co，Ti，Ta，W和Ge。

公开(公告)号：US4617086A

公开(公告)日：1986-10-14

申请号：US360027

申请日：1982-03-19

申请人： Tung J. Chuang ,  Frances A. Houle ,  Kurt E. Petersen

发明人： Tung J. Chuang ,  Frances A. Houle ,  Kurt E. Petersen

IPC分类号： H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/3065

摘要： A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.

摘要翻译： 以45微米/秒的非常快的速率用激光蚀刻硅的方法包括以下步骤：在硅周围提供六氟化硫气氛，并将波长为约0.6或更小的微米的连续激光束引导到 说硅。

公开(公告)号：US07079223B2

公开(公告)日：2006-07-18

申请号：US10783938

申请日：2004-02-20

申请人： Alan E. Rosenbluth ,  Gregg M. Gallatin ,  Ronald L. Gordon ,  Nakgeuon Seong ,  Alexey Y. Lvov ,  William D. Hinsberg ,  John A. Hoffnagle ,  Frances A. Houle ,  Martha I. Sanchez

发明人： Alan E. Rosenbluth ,  Gregg M. Gallatin ,  Ronald L. Gordon ,  Nakgeuon Seong ,  Alexey Y. Lvov ,  William D. Hinsberg ,  John A. Hoffnagle ,  Frances A. Houle ,  Martha I. Sanchez

IPC分类号： G03B27/42

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70441

摘要： A method and system is provided for computing lithographic images that may take into account non-scalar effects such as lens birefringence, resist stack effects, tailored source polarizations, and blur effects of the mask and the resist. A generalized bilinear kernel is formed, which is independent of the mask transmission function, and which may then be treated using a decomposition to allow rapid computation of an image that includes such non-scalar effects. Weighted pre-images may be formed from a coherent sum of pre-computed convolutions of the dominant eigenfunctions of the generalized bilinear kernel with the appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can then be used to perform model-based optical proximity correction (MBOPC).

摘要翻译： 提供了一种用于计算光刻图像的方法和系统，其可以考虑非标量效应，例如透镜双折射，抗蚀剂堆叠效应，定制的源极化以及掩模和抗蚀剂的模糊效果。 形成广义双线性核，其与掩模传递函数无关，然后可以使用分解来处理，以允许快速计算包括这种非标量效应的图像。 加权预图像可以由广义双线性核的主要本征函数与适当的掩模多边形扇区的预先计算的卷积的相干和形成。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 然后，所得到的图像可用于执行基于模型的光学邻近校正（MBOPC）。