Fast model-based optical proximity correction
    1.
    发明授权
    Fast model-based optical proximity correction 失效
    基于快速模型的光学邻近校正

    公开(公告)号:US07079223B2

    公开(公告)日:2006-07-18

    申请号:US10783938

    申请日:2004-02-20

    IPC分类号: G03B27/42

    摘要: A method and system is provided for computing lithographic images that may take into account non-scalar effects such as lens birefringence, resist stack effects, tailored source polarizations, and blur effects of the mask and the resist. A generalized bilinear kernel is formed, which is independent of the mask transmission function, and which may then be treated using a decomposition to allow rapid computation of an image that includes such non-scalar effects. Weighted pre-images may be formed from a coherent sum of pre-computed convolutions of the dominant eigenfunctions of the generalized bilinear kernel with the appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can then be used to perform model-based optical proximity correction (MBOPC).

    摘要翻译: 提供了一种用于计算光刻图像的方法和系统,其可以考虑非标量效应,例如透镜双折射,抗蚀剂堆叠效应,定制的源极化以及掩模和抗蚀剂的模糊效果。 形成广义双线性核,其与掩模传递函数无关,然后可以使用分解来处理,以允许快速计算包括这种非标量效应的图像。 加权预图像可以由广义双线性核的主要本征函数与适当的掩模多边形扇区的预先计算的卷积的相干和形成。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 然后,所得到的图像可用于执行基于模型的光学邻近校正(MBOPC)。

    Stochastic simulation method for processes containing equilibrium steps
    2.
    发明授权
    Stochastic simulation method for processes containing equilibrium steps 失效
    包含平衡步骤的过程的随机模拟方法

    公开(公告)号:US5625579A

    公开(公告)日:1997-04-29

    申请号:US241316

    申请日:1994-05-10

    摘要: A system and method for simulating a mechanistic kinetic process, such as a chemical process including one or more chemical reactions, over a predetermined time period is provided. The simulation proceeds stochastically, by taking discrete time steps through the time period, and performing events (i.e., chemical reactions), based on the relationship between their probabilities of occurrence and the time steps taken. The system and method of the invention include means or method steps for detecting equilibrium conditions, in which a reaction moves forward and backward with a reaction probability which is high, relative to the probabilities of other reactions being simulated. When a reaction in equilibrium is detected, a probability calculation is made, based on the non-equilibrium reactions being simulated. Time steps are made, and events are simulated, based only on the non-equilibrium reactions. Thus, processing time, which would otherwise be consumed simulating back-and-forth events in the equilibrium reaction, is saved.

    摘要翻译: 提供了一种用于在预定时间段内模拟机械动力学过程(例如包括一个或多个化学反应的化学过程)的系统和方法。 该模拟随机地进行,通过在该时间段内采取离散时间步骤,并且基于它们发生的概率与所采用的时间步骤之间的关系来执行事件(即,化学反应)。 本发明的系统和方法包括用于检测平衡条件的手段或方法步骤,其中反应以相对于正在模拟的其他反应的概率为高的反应概率向前和向后移动。 当检测到平衡反应时,基于模拟的非平衡反应进行概率计算。 仅基于非平衡反应,进行时间步长和模拟事件。 因此,节省了在平衡反应中模拟反向事件的处理时间。

    Spatially resolved stochastic simulation system
    3.
    发明授权
    Spatially resolved stochastic simulation system 失效
    空间解析随机仿真系统

    公开(公告)号:US5446870A

    公开(公告)日:1995-08-29

    申请号:US317421

    申请日:1994-10-04

    摘要: The present invention comprises a simulator including at least one data storage apparatus and at least one processor. The simulator further has a material property data group, a system state data group comprising geometrical data for defining a plurality of geometrical subvolumes and system condition data for each subvolume of a simulated system, an event probability data group including a plurality of event subgroups for uniquely identifying a set of events, event probabilities being associated with at least one of the geometrical subvolumes, and an event process data group including the time dependent process functions for all events which can occur in the system. These data groups and at least one functional-relationship link for correlating all of them are stored in the data storage apparatus. Thus, the material energy system can be represented by such data groups without requiring an explicit multiple dimension data structure. The processor performs a simulating process comprising the steps of: (a) computing the probability of occurrence for each of the events and determining a time step by using a total probability of occurrence for each of the events; (b) randomly selecting a simulated event for the time step and updating the system condition data group representing the system state; and (c) repeating the steps (a) and (b) until a predefined simulation end time is reached.

    摘要翻译: 本发明包括一个包括至少一个数据存储装置和至少一个处理器的模拟器。 模拟器还具有材料属性数据组,系统状态数据组包括用于定义多个几何子体积的几何数据和用于模拟系统的每个子体积的系统条件数据,事件概率数据组包括用于唯一的多个事件子组 识别一组事件,与几何子体积中的至少一个相关联的事件概率,以及包括可在系统中发生的所有事件的时间相关过程函数的事件过程数据组。 这些数据组和用于将它们全部关联的至少一个功能关系链路存储在数据存储装置中。 因此,材料能量系统可以由这样的数据组来表示,而不需要显式的多维数据结构。 处理器执行模拟处理,其包括以下步骤:(a)计算每个事件的发生概率,并且通过使用每个事件的总发生概率来确定时间步长; (b)随机选择时间步长的模拟事件,更新表示系统状态的系统条件数据组; 和(c)重复步骤(a)和(b),直到达到预定的模拟结束时间。

    Method and apparatus for sub-pellicle defect reduction on photomasks
    4.
    发明授权
    Method and apparatus for sub-pellicle defect reduction on photomasks 有权
    在光掩模上进行亚防护薄膜缺陷减少的方法和装置

    公开(公告)号:US08758962B2

    公开(公告)日:2014-06-24

    申请号:US13443427

    申请日:2012-04-10

    IPC分类号: G03F1/48 G03F1/20

    CPC分类号: G03F1/62 G03F1/38 G03F1/48

    摘要: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.

    摘要翻译: 在一个实施例中,本发明是用于光掩模上的亚防护薄膜缺陷减少的方法和装置。 用于光刻的光掩模的一个实施例包括其上形成图案的基板,具有前侧和相对背面的基板以及形成在前侧和后侧中的至少一个上的保护涂层,保护涂层包括硅 基化合物。

    Stabilizers for vinyl ether resist formulations for imprint lithography
    5.
    发明授权
    Stabilizers for vinyl ether resist formulations for imprint lithography 有权
    用于压印光刻的乙烯基醚抗蚀剂配方的稳定剂

    公开(公告)号:US08168109B2

    公开(公告)日:2012-05-01

    申请号:US12545161

    申请日:2009-08-21

    IPC分类号: B29C35/08 B29C59/02 G03F7/004

    摘要: Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.

    摘要翻译: 适用于UV印迹光刻应用的涂料组合物包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 所述至少一种光致酸产生剂可溶于所述至少一种单官能乙烯基醚化合物和所述至少一种具有所述至少两个乙烯基醚基团的乙烯基醚交联剂中选定的一种或两种; 和至少一种稳定剂,其包含在酯位或α位选择性地被取代基取代的酯化合物。 还公开了压印过程。

    METHOD AND APPARATUS FOR SUB-PELLICLE DEFECT REDUCTION ON PHOTOMASKS
    7.
    发明申请
    METHOD AND APPARATUS FOR SUB-PELLICLE DEFECT REDUCTION ON PHOTOMASKS 有权
    用于光子晶体缺陷减少的方法和装置

    公开(公告)号:US20100178598A1

    公开(公告)日:2010-07-15

    申请号:US12685491

    申请日:2010-01-11

    IPC分类号: G03F1/00

    CPC分类号: G03F1/62 G03F1/38 G03F1/48

    摘要: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.

    摘要翻译: 在一个实施例中,本发明是用于光掩模上的亚防护薄膜缺陷减少的方法和装置。 用于光刻的光掩模的一个实施例包括其上形成图案的基板,具有前侧和相对背面的基板以及形成在前侧和后侧中的至少一个上的保护涂层,保护涂层包括硅 基化合物。

    METHOD AND APPARATUS FOR SUB-PELLICLE DEFECT REDUCTION ON PHOTOMASKS
    10.
    发明申请
    METHOD AND APPARATUS FOR SUB-PELLICLE DEFECT REDUCTION ON PHOTOMASKS 有权
    用于光子晶体缺陷减少的方法和装置

    公开(公告)号:US20120196212A1

    公开(公告)日:2012-08-02

    申请号:US13443427

    申请日:2012-04-10

    IPC分类号: G03F1/48 B82Y40/00 B82Y30/00

    CPC分类号: G03F1/62 G03F1/38 G03F1/48

    摘要: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.

    摘要翻译: 在一个实施例中,本发明是用于光掩模上的亚防护薄膜缺陷减少的方法和装置。 用于光刻的光掩模的一个实施例包括其上形成图案的基板,具有前侧和相对背面的基板以及形成在前侧和后侧中的至少一个上的保护涂层,保护涂层包括硅 基化合物。