公开(公告)号：US09105693B2

公开(公告)日：2015-08-11

申请号：US13614563

申请日：2012-09-13

申请人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

发明人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L29/40 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H05K1/0216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76852 ,  H05K1/0298 ,  H05K1/03 ,  H05K2201/0707 ,  H05K2201/09063

摘要： A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.

摘要翻译： 微电子结构和微电子结构的制造方法提供插入在多个导体层之间的多个空隙。 多个空隙也位于衬垫层和层间电介质层之间。 空隙提供了微电子结构的增强的电性能。

公开(公告)号：US08232195B2

公开(公告)日：2012-07-31

申请号：US12137875

申请日：2008-06-12

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/76865

摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.

摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。

公开(公告)号：US20090108450A1

公开(公告)日：2009-04-30

申请号：US11928327

申请日：2007-10-30

申请人： James R. LLOYD, JR. ,  Shom Ponoth ,  Terry A. Spooner ,  Chih-Chao Yang

发明人： James R. LLOYD, JR. ,  Shom Ponoth ,  Terry A. Spooner ,  Chih-Chao Yang

IPC分类号： H01L23/52

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and method of fabricating the same is provided. The interconnect structure is a highly reliable copper interconnect structure. The interconnect structure includes a planarized lower dielectric layer and a lower cap layer on the planarized lower dielectric layer. A copper material is formed in a trench of the planarized lower dielectric layer, below the lower cap layer. A lower liner extends into a pattern of the lower cap layer and contacts the copper layer. An upper dielectric layer is on the lower cap layer and a copper layer contacts the lower liner and is formed in a via of at least the lower cap layer. An upper liner is formed over the copper layer, sandwiching the copper layer between the lower liner and the upper liner. An upper copper layer is formed over the upper liner.

摘要翻译： 提供了互连结构及其制造方法。 互连结构是高度可靠的铜互连结构。 互连结构包括在平坦化的下介电层上的平坦化的下介电层和下盖层。 在平坦化的下介电层的沟槽中形成铜材料，在下盖层下方。 下衬垫延伸成下盖层的图案并与铜层接触。 上电介质层在下盖层上，铜层接触下衬垫，并形成在至少下盖层的通孔中。 在铜层之上形成上衬垫，将铜层夹在下衬套和上衬套之间。 在上衬板上方形成上铜层。

公开(公告)号：US07402883B2

公开(公告)日：2008-07-22

申请号：US11380074

申请日：2006-04-25

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/76865

摘要： A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure, the intermediate interconnect structure having an opening disposed between two surfaces of a dielectric material, wherein the first liner layer is in direct contact with at least a portion of a conductive wiring material of an underneath interconnect layer; a noble metal layer disposed on the first liner layer at least in the opening; and a conductive wiring material disposed on the noble metal layer, the conductive wiring material substantially filling the opening; wherein the first liner layer, the noble metal layer and the conductive wiring material are coplanar with the two surfaces of the dielectric material of the intermediate interconnect structure, and the noble metal layer includes a different material than the first liner layer.

摘要翻译： 提出了半导体器件的线路（BEOL）结构的后端。 在一个实施例中，该结构可以包括设置在中间互连结构上的第一衬里层，所述中间互连结构具有设置在电介质材料的两个表面之间的开口，其中第一衬垫层与至少一部分 下面的互连层的导电布线材料; 至少在所述开口中设置在所述第一衬垫层上的贵金属层; 以及布置在所述贵金属层上的导电布线材料，所述导电布线材料基本上填充所述开口; 其中所述第一衬里层，所述贵金属层和所述导电布线材料与所述中间互连结构的介电材料的两个表面共面，并且所述贵金属层包括与所述第一衬里层不同的材料。

公开(公告)号：US20130012017A1

公开(公告)日：2013-01-10

申请号：US13614563

申请日：2012-09-13

申请人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

发明人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/768

CPC分类号： H05K1/0216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76852 ,  H05K1/0298 ,  H05K1/03 ,  H05K2201/0707 ,  H05K2201/09063

摘要： A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.

公开(公告)号：US20080242082A1

公开(公告)日：2008-10-02

申请号：US12137875

申请日：2008-06-12

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/76865

摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.

摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。

公开(公告)号：US09059251B2

公开(公告)日：2015-06-16

申请号：US13614524

申请日：2012-09-13

申请人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

发明人： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768

CPC分类号： H05K1/0216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76852 ,  H05K1/0298 ,  H05K1/03 ,  H05K2201/0707 ,  H05K2201/09063

摘要： A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.

公开(公告)号：US20090155996A1

公开(公告)日：2009-06-18

申请号：US12177309

申请日：2008-07-22

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07498254B2

公开(公告)日：2009-03-03

申请号：US11682581

申请日：2007-03-06

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07215006B2

公开(公告)日：2007-05-08

申请号：US11245540

申请日：2005-10-07

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L23/58

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。