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公开(公告)号：US20090108450A1
公开(公告)日：2009-04-30
申请号：US11928327
申请日：2007-10-30
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method of fabricating the same is provided. The interconnect structure is a highly reliable copper interconnect structure. The interconnect structure includes a planarized lower dielectric layer and a lower cap layer on the planarized lower dielectric layer. A copper material is formed in a trench of the planarized lower dielectric layer, below the lower cap layer. A lower liner extends into a pattern of the lower cap layer and contacts the copper layer. An upper dielectric layer is on the lower cap layer and a copper layer contacts the lower liner and is formed in a via of at least the lower cap layer. An upper liner is formed over the copper layer, sandwiching the copper layer between the lower liner and the upper liner. An upper copper layer is formed over the upper liner.
摘要翻译： 提供了互连结构及其制造方法。 互连结构是高度可靠的铜互连结构。 互连结构包括在平坦化的下介电层上的平坦化的下介电层和下盖层。 在平坦化的下介电层的沟槽中形成铜材料，在下盖层下方。 下衬垫延伸成下盖层的图案并与铜层接触。 上电介质层在下盖层上，铜层接触下衬垫，并形成在至少下盖层的通孔中。 在铜层之上形成上衬垫，将铜层夹在下衬套和上衬套之间。 在上衬板上方形成上铜层。
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2.发明授权Method for fabricating back end of the line structures with liner and seed materials 失效用衬里和种子材料制造线结构后端的方法公开(公告)号：US08232195B2
公开(公告)日：2012-07-31
申请号：US12137875
申请日：2008-06-12
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/76865
摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.
摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。
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公开(公告)号：US07402883B2
公开(公告)日：2008-07-22
申请号：US11380074
申请日：2006-04-25
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/76865
摘要： A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure, the intermediate interconnect structure having an opening disposed between two surfaces of a dielectric material, wherein the first liner layer is in direct contact with at least a portion of a conductive wiring material of an underneath interconnect layer; a noble metal layer disposed on the first liner layer at least in the opening; and a conductive wiring material disposed on the noble metal layer, the conductive wiring material substantially filling the opening; wherein the first liner layer, the noble metal layer and the conductive wiring material are coplanar with the two surfaces of the dielectric material of the intermediate interconnect structure, and the noble metal layer includes a different material than the first liner layer.
摘要翻译： 提出了半导体器件的线路（BEOL）结构的后端。 在一个实施例中，该结构可以包括设置在中间互连结构上的第一衬里层，所述中间互连结构具有设置在电介质材料的两个表面之间的开口，其中第一衬垫层与至少一部分 下面的互连层的导电布线材料; 至少在所述开口中设置在所述第一衬垫层上的贵金属层; 以及布置在所述贵金属层上的导电布线材料，所述导电布线材料基本上填充所述开口; 其中所述第一衬里层，所述贵金属层和所述导电布线材料与所述中间互连结构的介电材料的两个表面共面，并且所述贵金属层包括与所述第一衬里层不同的材料。
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4.发明授权Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement 有权电镀种子层包括用于屏障增强的氧/氮过渡区域公开(公告)号：US08003524B2
公开(公告)日：2011-08-23
申请号：US12177309
申请日：2008-07-22
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。
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5.发明申请METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS 失效用衬里和种子材料制作线结构的后端的方法公开(公告)号：US20080242082A1
公开(公告)日：2008-10-02
申请号：US12137875
申请日：2008-06-12
IPC分类号： H01L21/768
CPC分类号： H01L21/76846 , H01L21/76865
摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.
摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。
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6.发明申请PLATING SEED LAYER INCLUDING AN OXYGEN/NITROGEN TRANSITION REGION FOR BARRIER ENHANCEMENT 有权包括用于障碍物增强的氧/氮过渡区的种植层公开(公告)号：US20090155996A1
公开(公告)日：2009-06-18
申请号：US12177309
申请日：2008-07-22
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。
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7.发明授权Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement 有权电镀种子层包括用于屏障增强的氧/氮过渡区域公开(公告)号：US07498254B2
公开(公告)日：2009-03-03
申请号：US11682581
申请日：2007-03-06
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。
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8.发明授权Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement 失效电镀种子层包括用于屏障增强的氧/氮过渡区域公开(公告)号：US07215006B2
公开(公告)日：2007-05-08
申请号：US11245540
申请日：2005-10-07
IPC分类号： H01L23/58
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。
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公开(公告)号：US08877645B2
公开(公告)日：2014-11-04
申请号：US13233064
申请日：2011-09-15
IPC分类号： H01L21/768 , H01L23/48 , H01L29/78
CPC分类号： H01L29/42372 , H01L21/28247 , H01L21/76834 , H01L21/7685 , H01L21/76856 , H01L21/76888 , H01L21/76897 , H01L29/495 , H01L29/517 , H01L29/78
摘要： Methods of forming an integrated circuit structure utilizing a selectively formed and at least partially oxidized metal cap over a gate, and associated structures. In one embodiment, a method includes providing a precursor structure including a transistor having a metal gate; forming an etch stop layer over an exposed portion of the metal gate; at least partially oxidizing the etch stop layer; and forming a dielectric layer over the at least partially oxidized etch stop layer.
摘要翻译： 在栅极上利用选择性地形成和至少部分氧化的金属盖形成集成电路结构的方法以及相关联的结构。 在一个实施例中，一种方法包括提供包括具有金属栅极的晶体管的前体结构; 在所述金属栅极的暴露部分上形成蚀刻停止层; 至少部分氧化所述蚀刻停止层; 以及在所述至少部分氧化的蚀刻停止层上形成介电层。
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公开(公告)号：US08803321B2
公开(公告)日：2014-08-12
申请号：US13490542
申请日：2012-06-07
IPC分类号： H01L23/535 , H01L21/283
CPC分类号： H01L21/76897 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76819 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76883 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A stack of a first metal line and a first dielectric cap material portion is formed within a line trench of first dielectric material layer. A second dielectric material layer is formed thereafter. A line trench extending between the top surface and the bottom surface of the second dielectric material layer is patterned. A photoresist layer is applied over the second dielectric material layer and patterned with a via pattern. An underlying portion of the first dielectric cap material is removed by an etch selective to the dielectric materials of the first and second dielectric material layer to form a via cavity that is laterally confined along the widthwise direction of the line trench and along the widthwise direction of the first metal line. A dual damascene line and via structure is formed, which includes a via structure that is laterally confined along two independent horizontal directions.
摘要翻译： 在第一介电材料层的线沟槽内形成第一金属线和第一介电帽材料部分的堆叠。 此后形成第二电介质材料层。 在第二介电材料层的顶表面和底表面之间延伸的线沟槽被图案化。 将光致抗蚀剂层施加在第二介电材料层上并用通孔图案构图。 通过对第一和第二介电材料层的电介质材料的选择性蚀刻去除第一电介质盖材料的下部，以形成沿着线沟槽的宽度方向横向限制的通孔腔，并沿着宽度方向 第一条金属线。 形成双镶嵌线和通孔结构，其包括沿着两个独立的水平方向横向限制的通孔结构。
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