Resonant pressure sensor with improved linearity

    公开(公告)号:US11428594B2

    公开(公告)日:2022-08-30

    申请号:US17143517

    申请日:2021-01-07

    Abstract: A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1×1020 (cm−3) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

    Resonant transducer
    12.
    发明授权

    公开(公告)号:US11211916B2

    公开(公告)日:2021-12-28

    申请号:US15814481

    申请日:2017-11-16

    Abstract: A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

    Method of manufacturing resonant transducer
    13.
    发明授权
    Method of manufacturing resonant transducer 有权
    制造谐振换能器的方法

    公开(公告)号:US09084067B2

    公开(公告)日:2015-07-14

    申请号:US13689199

    申请日:2012-11-29

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    Abstract translation: 一种制造具有振动束的谐振换能器的方法包括:(a)提供SOI衬底,包括:第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; (b)通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层,形成通过第二硅层的第一间隙和第二间隙; (c)在第二硅层上形成杂质扩散源层; (d)在第二硅层的表面部分形成杂质扩散层; (e)通过蚀刻去除杂质扩散源层; 以及(f)通过蚀刻去除所述氧化硅层的至少一部分,使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

    Resonant pressure sensor with imporved linearity

    公开(公告)号:US11592347B2

    公开(公告)日:2023-02-28

    申请号:US17854209

    申请日:2022-06-30

    Abstract: A resonant pressure sensor with improved linearity includes a substrate including a substrate-fixed portion fixed to a housing-fixed portion and a substrate-separated portion separated from the housing-fixed portion in a first direction; a first resonator disposed in the substrate-separated portion to detect a change of a resonance frequency based on a strain caused by static pressure applied by a pressure-receiving fluid interposed in a gap between the housing-fixed portion and the substrate; a first electrode extending along a second direction to output an excitation signal to the first resonator; a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency; and a processor that measures the static pressure based on the detected change.

    RESONANT PRESSURE SENSOR
    15.
    发明申请

    公开(公告)号:US20220349766A1

    公开(公告)日:2022-11-03

    申请号:US17854209

    申请日:2022-06-30

    Abstract: A resonant pressure sensor includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that comprises: a substrate-fixed portion that is fixed to the housing-fixed portion; and a substrate-separated portion that is separated from the housing-fixed portion in a first direction and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a first electrode that extends along a second direction perpendicular to the first direction and that outputs an excitation signal to the first resonator to excite the first resonator; and a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency.

    Building integrity assessment system

    公开(公告)号:US11255989B2

    公开(公告)日:2022-02-22

    申请号:US16806411

    申请日:2020-03-02

    Abstract: A building integrity assessment system includes: an earthquake detector including: a building bottom sensor at a bottom of a building and that detects acceleration and an earthquake early-warning receiver that receives an earthquake early warning; a cloud computer; and sensors disposed at a plurality of positions in the building and that measures an influence of an earthquake on the building at each of the positions and wirelessly transmits measurement results to the cloud computer. The cloud computer estimates and evaluates the integrity of the building based on the measurement results. In response to the building bottom sensor detecting preliminary tremors or the earthquake early-warning receiver receiving the earthquake early warning, the plurality of sensors measures the influence of the earthquake on the building from a time before a major motion arrives at the building to a time after the arrival.

    Current-to-voltage conversion circuit and self-oscillation circuit

    公开(公告)号:US10063217B2

    公开(公告)日:2018-08-28

    申请号:US14717046

    申请日:2015-05-20

    CPC classification number: H03K3/01 G01C19/5776 H02J4/00 H03B5/30 Y10T307/658

    Abstract: A current-to-voltage conversion circuit according to one aspect of the present invention includes a first resistor, a first current source, a first capacitor, a first output terminal, a first voltage source, a first transistor, and a second resistor. The first resistor includes a first end and a second end. The first end of the first resistor is connectable to an electrode included in a sensor and the second end of the first resistor is connected to a first electrical potential. The first capacitor includes a first end and a second end. The first end of the first capacitor is connected to the first end of the first resistor and the second end of the first capacitor is connected to the first current source. The first transistor includes a first terminal, a second terminal, and a control terminal. The first terminal is connected to the second end of the first capacitor, the second terminal is connected to the first output terminal, and the control terminal is connected to the first voltage source. The second resistor includes a first end connected to the second terminal and a second end connected to a second electrical potential.

    RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR
    19.
    发明申请
    RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR 审中-公开
    谐波传感器及其制造方法

    公开(公告)号:US20150047434A1

    公开(公告)日:2015-02-19

    申请号:US14460684

    申请日:2014-08-15

    Abstract: A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

    Abstract translation: 谐振压力传感器包括:第一衬底,包括隔膜和设置在隔膜上的至少一个突起;以及设置在第一衬底中的至少一个谐振器,所述谐振器的至少一部分包括在所述突起中,并且所述谐振器被布置 在所述突起的顶部和所述第一基板的中间水平面之间。

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