公开(公告)号：US06306762B1

公开(公告)日：2001-10-23

申请号：US08760557

申请日：1996-12-04

申请人： Makiko Nakamura ,  Yasuhiro Fukuda ,  Yasuyuki Tatara ,  Yusuke Harada ,  Hiroshi Onoda

发明人： Makiko Nakamura ,  Yasuhiro Fukuda ,  Yasuyuki Tatara ,  Yusuke Harada ,  Hiroshi Onoda

IPC分类号： H01L214763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/532 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is-formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.

摘要翻译： 具有多层金属化的半导体，其在铝合金和金属氮化物层之间具有金属层，防止当电迁移导致铝合金层不连续时互连的故障。 在一个实施例中，金属层的金属和氮化物层的金属都是相同的金属，例如钛。 在制造半导体器件的方法中，在半导体衬底的表面上形成绝缘层，在真空室中，在绝缘层上形成合金层，在合金层上形成金属层， 在氮气气氛下在金属层上形成金属氮化物层。 可以使用诸如RF偏压溅射或热蒸镀沉积的溅射来施加相应的氮化物，金属和合金层。 如果相同的金属用于金属层和氮化物层，则可以使用相同的真空室来施加两层，通过在氮化物层沉积期间用氮气气氛替换在金属层沉积期间使用的惰性气体气氛 。

公开(公告)号：US4987464A

公开(公告)日：1991-01-22

申请号：US473740

申请日：1990-02-02

申请人： Yasuhiro Fukuda ,  Shooji Kitazawa

发明人： Yasuhiro Fukuda ,  Shooji Kitazawa

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/10

CPC分类号： H01L27/0266 ,  H01L29/1033

摘要： In a semiconductor device having an external input terminal, a first insulated-gate field-effect transistor formed on a semiconductor substrate, and having a gate connected to the input terminal, and a second insulated-gate field effect transistor having a drain connected to the gate of the first insulated-gate field-effect transistor, and having a gate and source connected to a reference voltage source, the ratio W/L of the channel width W to the channel length L of the second insulated-gate field effect transistor is not less than 12.

公开(公告)号：US4636724A

公开(公告)日：1987-01-13

申请号：US653921

申请日：1984-09-24

申请人： Yasuhiro Fukuda ,  Ikuo Suganuma

发明人： Yasuhiro Fukuda ,  Ikuo Suganuma

IPC分类号： G01R31/12 ,  G01R31/26 ,  G01R31/3161 ,  H01L21/66

CPC分类号： G01R31/2642 ,  G01R31/129 ,  G01R31/3161

摘要： A method and apparatus for examining the susceptibility of a semiconductor device to damage by discharge of electrostatic charge on a dielectric package of the device. The package is electrically charged, with an input or output pin of the device disconnected at least from a reference potential of the charging source. The input or output pin is then connected to the reference potential through a load impedance with the charging continued, to effect discharging of the charge on the package. Thus, the electrostatic breakdown voltage of the device can be determined with accuracy by testing of the device after each charging and discharging operation at successively higher charging potentials.

摘要翻译： 一种用于检查半导体器件通过在器件的电介质封装上的静电电荷放电而损坏的敏感性的方法和装置。 该封装是带电的，器件的输入或输出引脚至少与充电源的参考电位断开。 然后通过继续充电的负载阻抗将输入或输出引脚连接到参考电位，以实现封装上的电荷放电。 因此，可以通过在连续更高的充电电位下在每次充电和放电操作之后测试器件来精确地确定器件的静电击穿电压。

公开(公告)号：US09574213B2

公开(公告)日：2017-02-21

申请号：US13878469

申请日：2011-10-21

申请人： Yutaka Nakai ,  Yasunori Baba ,  Chika Tada ,  Yasuhiro Fukuda

发明人： Yutaka Nakai ,  Yasunori Baba ,  Chika Tada ,  Yasuhiro Fukuda

IPC分类号： C12P7/54 ,  C12N1/22 ,  C12P7/52 ,  C02F3/00 ,  C12P5/02 ,  D21C5/02

CPC分类号： C12P7/54 ,  C02F3/00 ,  C12N1/22 ,  C12P5/023 ,  C12P7/52 ,  C12P2203/00 ,  D21C5/02 ,  Y02E50/343 ,  Y02W30/648

摘要： The present application provides a method for producing organic acid, such as acetic acid, propionic acid, butyric acid, or another high-quality raw material designed for methane fermentation and obtained by converting waste paper and other forms of cellulose-based biomass to organic acid, wherein said method comprising a step for reacting rumen fluid collected from a ruminant animal with cellulose-containing waste matter. This method provides the effective use of cellulose-containing waste matter, which is a high-quality fermentation resource.

摘要翻译： 本申请提供了一种生产有机酸的方法，例如乙酸，丙酸，丁酸，或另一种设计用于甲烷发酵的优质原料，通过将废纸和其它形式的纤维素基生物质转化为有机酸获得 其中所述方法包括使从反刍动物收集的瘤胃液与含纤维素的废物反应的步骤。 这种方法提供了有效利用含有纤维素的废物，这是一种高品质的发酵资源。

公开(公告)号：US08686274B2

公开(公告)日：2014-04-01

申请号：US13301635

申请日：2011-11-21

申请人： Yasuhiro Fukuda ,  Shoichi Ikeda

发明人： Yasuhiro Fukuda ,  Shoichi Ikeda

IPC分类号： G10H1/00

CPC分类号： G10H1/20 ,  G10H3/125 ,  G10H2210/261 ,  G10H2250/035

摘要： A pitch shift device provides pitch-shifted sounds based on performance sounds generated by an electronic string musical instrument. The pitch shift device has a device that detects vibrato. When vibrato is detected, an interpolation device of a pitch shift control device performs a control of interpolating for a pitch shift change in the musical sound signal accompanying a change in pitch shift information stored in a pitch information storage device and read out by a pitch shift readout device from a group of pitch shift information. Therefore, unnatural pitch changes in pitch-shifted sound can be suppressed.

摘要翻译： 音调移位装置基于由电子乐器产生的演奏声音提供音调偏移的声音。 音高移位装置具有检测颤音的装置。 当检测到颤音时，音调移位控制装置的内插装置对音乐信号中随音调信息存储装置中存储的音调偏移信息的变化进行音调偏移改变进行内插控制，并通过音调偏移读出 读出装置从一组音调移位信息。 因此，可以抑制音调移动声音的非自然音高变化。

公开(公告)号：US08148782B2

公开(公告)日：2012-04-03

申请号：US12688080

申请日：2010-01-15

申请人： Yasuhiro Fukuda

发明人： Yasuhiro Fukuda

IPC分类号： H01L23/62

CPC分类号： H01L27/0255 ,  H01L21/84 ,  H01L27/0266 ,  H01L27/1203

摘要： A semiconductor device with an ESD protection function has an SOI substrate, first to fourth diffusion layers, and a gate. The SOI substrate has a semiconductor layer on an insulation layer. The first diffusion layer is of a first conductivity type and is formed on the semiconductor layer. The second diffusion layer is of the first conductivity type and is formed on the semiconductor layer. The third diffusion layer is of a second conductivity type and is formed on the semiconductor layer so as to be adjacent to the first and second diffusion layers. The fourth diffusion layer is of the second conductivity type and is formed on the semiconductor layer so as to be adjacent to the first diffusion layer and electrically connected to the second diffusion layer. The gate is formed over the third diffusion layer.

摘要翻译： 具有ESD保护功能的半导体器件具有SOI衬底，第一至第四扩散层和栅极。 SOI衬底在绝缘层上具有半导体层。 第一扩散层是第一导电类型并形成在半导体层上。 第二扩散层是第一导电类型，并形成在半导体层上。 第三扩散层是第二导电类型，并且形成在半导体层上以便与第一和第二扩散层相邻。 第四扩散层是第二导电类型，并且形成在半导体层上以与第一扩散层相邻并且电连接到第二扩散层。 栅极形成在第三扩散层上。

公开(公告)号：US07723794B2

公开(公告)日：2010-05-25

申请号：US11516752

申请日：2006-09-07

申请人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

发明人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

IPC分类号： H01L23/62

CPC分类号： H01L27/0266 ,  H01L27/0288 ,  Y10T436/206664

摘要： A load driving device includes a drive control signal generation circuit generating a load drive control signal and a semiconductor buffer circuit generating an output signal in response to the load drive control signal. The buffer circuit has a pair of gate driven switching elements which are connected to each other in push-pull configuration and driven at their gate terminals by the load drive control signal. The buffer circuit has an output terminal which is connected to a connection point between ends of controlled electrodes of the gate driven switching elements, and a power source terminal and a ground connection terminal respectively connected to the remaining ends of the other controlled electrodes of the gate driven switching elements. A ground connection side element of a pair of gate driven switching elements has a set of MOS transistors which are connected across the connection point and the ground connection terminal.

摘要翻译： 负载驱动装置包括产生负载驱动控制信号的驱动控制信号产生电路和响应于负载驱动控制信号产生输出信号的半导体缓冲电路。 缓冲电路具有一对栅极驱动的开关元件，它们以推挽配置相互连接，并通过负载驱动控制信号在其栅极端子处驱动。 缓冲电路具有连接到栅极驱动的开关元件的受控电极的端部之间的连接点的输出端子，以及分别连接到栅极的其他受控电极的剩余端的电源端子和接地连接端子 驱动开关元件。 一对栅极驱动的开关元件的接地连接侧元件具有连接在连接点和接地连接端子上的一组MOS晶体管。

公开(公告)号：US07671415B2

公开(公告)日：2010-03-02

申请号：US11276823

申请日：2006-03-15

申请人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

发明人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

IPC分类号： H01L23/62

CPC分类号： H01L27/0262

摘要： An electro-static discharge protection circuit and a semiconductor device having the same is disclosed. The electro-static discharge protection circuit has a current control circuit. The current control circuit has a first capacitive element. When the external source voltage is applied to the external source voltage supply line, the booster circuit in the internal circuitry boosts the internal source voltage of the internal source voltage supply line. The external source voltage becomes transiently greater than the internal source voltage at the early stage of the boosting step when the booster circuit boosts the internal source voltage based on the external source voltage. The first capacitive element restricts a current from flowing from the second terminal of the thyristor rectifier circuit to the internal source voltage, even when the external source voltage becomes transiently greater than the internal source voltage at the early stage of the boosting step when the booster circuit boosts the internal source voltage based on the external source voltage. This prevents the thyristor rectifier circuit from malfunctioning and turning on.

摘要翻译： 公开了一种静电放电保护电路及具有该静电放电保护电路的半导体器件。 静电放电保护电路具有电流控制电路。 电流控制电路具有第一电容元件。 当外部电源电压施加到外部电源电源线时，内部电路中的升压电路会提升内部电源电压源的内部源电压。 当升压电路根据外部电源电压提升内部源电压时，外部源电压在升压阶段的早期阶段瞬间大于内部源电压。 第一电容元件限制电流从晶闸管整流电路的第二端子流到内部源极电压，即使在升压电路的早期阶段，当外部电源电压瞬时地大于升压阶段的内部源极电压时， 根据外部源电压提升内部源电压。 这样可以防止晶闸管整流电路发生故障并导通。

公开(公告)号：US20070052033A1

公开(公告)日：2007-03-08

申请号：US11516752

申请日：2006-09-07

申请人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

发明人： Toshikazu Kuroda ,  Hirokazu Hayashi ,  Yasuhiro Fukuda

IPC分类号： H01L23/62

CPC分类号： H01L27/0266 ,  H01L27/0288 ,  Y10T436/206664

摘要： A load driving device includes a drive control signal generation circuit generating a load drive control signal and a semiconductor buffer circuit generating an output signal in response to the load drive control signal. The buffer circuit has a pair of gate driven switching elements which are connected to each other in push-pull configuration and driven at their gate terminals by the load drive control signal. The buffer circuit has an output terminal which is connected to a connection point between ends of controlled electrodes of the gate driven switching elements, and a power source terminal and a ground connection terminal respectively connected to the remaining ends of the other controlled electrodes of the gate driven switching elements. A ground connection side element of a pair of gate driven switching elements has a set of MOS transistors which are connected across the connection point and the ground connection terminal.

摘要翻译： 负载驱动装置包括产生负载驱动控制信号的驱动控制信号产生电路和响应于负载驱动控制信号产生输出信号的半导体缓冲电路。 缓冲电路具有一对栅极驱动的开关元件，它们以推挽配置相互连接，并通过负载驱动控制信号在其栅极端子处驱动。 缓冲电路具有连接到栅极驱动的开关元件的受控电极的端部之间的连接点的输出端子，以及分别连接到栅极的其他受控电极的剩余端的电源端子和接地连接端子 驱动开关元件。 一对栅极驱动的开关元件的接地连接侧元件具有连接在连接点和接地连接端子上的一组MOS晶体管。

公开(公告)号：US20060054993A1

公开(公告)日：2006-03-16

申请号：US11082918

申请日：2005-03-18

申请人： Yasuhiro Fukuda

发明人： Yasuhiro Fukuda

IPC分类号： H01L29/00

CPC分类号： H01L23/5258 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a fuse, an internal circuit and a protection capacitor. The fuse has a first terminal connected to be applied to a fixed voltage and a second terminal. The internal circuit includes a transistor. The transistor has a threshold voltage and a gate. The protection capacitor is connected between the second terminal of the fuse and the gate of the transistor. The protection capacitor supplies the threshold voltage to the transistor where the fuse supplies the fixed voltage to the protection capacitor.