摘要:
A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as DC magnetron sputtering, RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.
摘要:
A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is-formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.
摘要:
A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ diffusion layer encloses the surface of the emitter and has a window part immediately under the emitter. Thus, a semiconductor device and a method of fabricating the same capable of suppressing dispersion of a current amplification factor hFE in a wafer plane of the low breakdown voltage transistor and fabricating the low breakdown voltage transistor and a high breakdown voltage transistor through simple steps are obtained.
摘要:
An aluminum wire is connected to a P-type layer of a polydiode element through a resistive element consisting of a barrier metal film and a tungsten plug. Another aluminum wire is connected to an N-type layer of the polydiode element through another resistive element consisting of another barrier metal film and another tungsten plug. Thus, a semiconductor device including a polydiode element which is resistant to surge or contamination is provided.
摘要:
Each nonvolatile transistor comprises a floating gate electrode, an ONO film and a control gate electrode. An upper surface of a silicon oxide film is positioned at a height between upper and lower surfaces of the floating gate electrode. The control gate electrode continuously extends on the floating gate electrode and the silicon oxide film in a prescribed arrangement direction.
摘要:
A fiber-reinforced composite cylindrical form formed by winding up unidirectional prepreg sheets around a mandrel according to such four patterns as to set the fiber winding angles of the resulting layers thereof at 0.degree., 90.degree., 40.degree. to 50.degree., and -40.degree. to -50.degree. with the longer direction thereof, and then heat-curing said layers of said prepreg sheets.
摘要:
An electric typewriter having a prevention mechanism for preventing printing errors caused by a depression of a few keys in very rapid succession. The prevention mechanism includes a lock member for locking a clutch, which is interposed between a drive motor and a printing mechanism, in a disengaged condition. The lock member is normally held in a non-operational position for allowing the clutch to be engaged, and is moved in response to a special operation of a sensing member to an operational position for keeping the clutch in a disengaged condition. The sensing member is so disposed as to be moved in a distinct way different from the normal operation mode when a few keys have been depressed in very rapid succession.
摘要:
A single element print head having an apparatus for firmly and releasably attaching itself to the drive shaft of a typewriter. The body of the print head is provided with a central opening therethrough for receipt of the drive shaft. A cap is secured on the body around one end of the opening with the purpose of slidably holding a manual slide member in its guide recess and fixedly holding a base portion of a hair pin shaped spring in its holding groove. The spring has a pair of arms for firmly fastening therebetween, and for releasing the drive shaft by virtue of its resilience and the action of a pair of cam surfaces. The pair of cam surfaces are formed in the bottom portion of the slide member, diverging from one end to the other end like a front portion of a bullet, for expanding the arms from each other to release the arms from the drive shaft by means of the slide movement of the slide member.