公开(公告)号：US08519496B2

公开(公告)日：2013-08-27

申请号：US13035857

申请日：2011-02-25

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/10

摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

摘要翻译： 自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。 在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向 变得基本上标题为平面外和第一自由层开关的磁化方向。 在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。

公开(公告)号：US20130001717A1

公开(公告)日：2013-01-03

申请号：US13538863

申请日：2012-06-29

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang ,  Roger Klas Malmhall

IPC分类号： H01L29/82

CPC分类号： H01F10/3236 ,  H01F10/3286 ,  H01L43/10

摘要： Thin film perpendicular magnetic multilayer structures which can be used in various thin film magnetic structures are described. One multilayer structure embodiment is formed by interlacing a soft magnetic layer and a FePt based magnetic layer in N repeats, where N is a positive integer. Various MRAM MTJ structures are described using multilayer structure embodiments for a free layer, a reference layer, and a pinned layer according to the invention.

摘要翻译： 描述了可用于各种薄膜磁性结构的薄膜垂直磁性多层结构。 一个多层结构实施例通过在N个重复中交织软磁层和基于FePt的磁性层来形成，其中N是正整数。 使用根据本发明的自由层，参考层和钉扎层的多层结构实施例描述了各种MRAM MTJ结构。

公开(公告)号：US20120217595A1

公开(公告)日：2012-08-30

申请号：US13289372

申请日：2011-11-04

申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

公开(公告)号：US20120326712A1

公开(公告)日：2012-12-27

申请号：US13134925

申请日：2011-06-21

申请人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： G01R33/02

CPC分类号： G01R33/093

摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

公开(公告)号：US08633720B2

公开(公告)日：2014-01-21

申请号：US13134925

申请日：2011-06-21

申请人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： G01R27/08

CPC分类号： G01R33/093

摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

公开(公告)号：US08565010B2

公开(公告)日：2013-10-22

申请号：US13099321

申请日：2011-05-02

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L43/02

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US08598576B2

公开(公告)日：2013-12-03

申请号：US13029054

申请日：2011-02-16

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L29/66984 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US08574928B2

公开(公告)日：2013-11-05

申请号：US13443818

申请日：2012-04-10

申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  H01L43/12

摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

公开(公告)号：US08885395B2

公开(公告)日：2014-11-11

申请号：US13402123

申请日：2012-02-22

申请人： Yuchen Zhou ,  Zihui Wang ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger K. Malmhall

发明人： Yuchen Zhou ,  Zihui Wang ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger K. Malmhall

IPC分类号： G11C11/00

CPC分类号： G11C11/00 ,  G11C11/161 ,  G11C11/1673 ,  H01L27/222 ,  H01L43/08

摘要： A magnetoresistive logic cell (MRLC) is described that includes two MTJs in series that share a common free layer (CFL). The relative magnetization orientations of the CFL and the switchable reference layer (SRL) in MTJ-1 dominate the overall resistance of the MRLC without regard to the fixed magnetization orientation of the nonswitchable reference layer in MTJ-2. The high resistance state of the MRLC occurs when the switchable reference and common free layers have opposite magnetization orientations. The low resistance state occurs when the orientations are the same. This behavior allows the MRLC to be used as a logical comparator. The CFL is switched by STT effect by application of selected relatively short voltage pulses that do not switch the SRL. The SRL is switched with reference to the CFL by a voltage effect generated by a selected longer voltage pulse that does not switch the CFL.

摘要翻译： 描述了包含共享共同自由层（CFL）的两个串联MTJ的磁阻逻辑单元（MRLC）。 MTJ-1中CFL和可切换参考层（SRL）的相对磁化取向主导了MRLC的总体电阻，而不考虑MTJ-2中不可切换参考层的固定磁化方向。 当可切换参考和公共自由层具有相反的磁化方向时，MRLC的高电阻状态发生。 当取向相同时，发生低电阻状态。 此行为允许将MRLC用作逻辑比较器。 通过施加不切换SRL的选定的相对较短的电压脉冲，通过STT效应来切换CFL。 通过由不会切换CFL的选定的较长电压脉冲产生的电压效应，SRL将根据CFL进行切换。

公开(公告)号：US20120206958A1

公开(公告)日：2012-08-16

申请号：US13099321

申请日：2011-05-02

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L43/02

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。