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    Magnetic random access memory with switching assist layer
    3.
    发明授权
    Magnetic random access memory with switching assist layer 有权
    具有开关辅助层的磁性随机存取存储器

    公开(公告)号：US08492860B2

    公开(公告)日：2013-07-23

    申请号：US13289372

    申请日：2011-11-04

    申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

    摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

    MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
    5.
    发明申请
    MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
    具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法

    公开(公告)号：US20130119498A1

    公开(公告)日：2013-05-16

    申请号：US13737897

    申请日：2013-01-09

    申请人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

    发明人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

    IPC分类号： H01L43/02

    CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

    摘要翻译： 用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL） ）。 第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

    PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS
    6.
    发明申请
    PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS 审中-公开
    具有MTJ的全面MRAM，包括层压磁性层

    公开(公告)号：US20130001717A1

    公开(公告)日：2013-01-03

    申请号：US13538863

    申请日：2012-06-29

    申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang ,  Roger Klas Malmhall

    IPC分类号： H01L29/82

    CPC分类号： H01F10/3236 ,  H01F10/3286 ,  H01L43/10

    摘要： Thin film perpendicular magnetic multilayer structures which can be used in various thin film magnetic structures are described. One multilayer structure embodiment is formed by interlacing a soft magnetic layer and a FePt based magnetic layer in N repeats, where N is a positive integer. Various MRAM MTJ structures are described using multilayer structure embodiments for a free layer, a reference layer, and a pinned layer according to the invention.

    摘要翻译： 描述了可用于各种薄膜磁性结构的薄膜垂直磁性多层结构。 一个多层结构实施例通过在N个重复中交织软磁层和基于FePt的磁性层来形成，其中N是正整数。 使用根据本发明的自由层，参考层和钉扎层的多层结构实施例描述了各种MRAM MTJ结构。

    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)
    7.
    发明申请
    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 有权
    磁性锁定磁条随机存取存储器（MRAM）

    公开(公告)号：US20120217595A1

    公开(公告)日：2012-08-30

    申请号：US13289372

    申请日：2011-11-04

    申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

    摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)
    10.
    发明申请
    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 有权
    磁性锁定磁条随机存取存储器（MRAM）

    公开(公告)号：US20120087185A1

    公开(公告)日：2012-04-12

    申请号：US13035857

    申请日：2011-02-25

    申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/10

    摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译： 自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。 在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向 变得基本上标题为平面外和第一自由层开关的磁化方向。 在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。