摘要:
A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
摘要:
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
摘要:
A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
摘要:
A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.
摘要:
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.
摘要:
A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
摘要:
A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
摘要:
A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
摘要:
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
摘要:
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.