Abstract:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
Abstract:
A home network system using a living network control protocol. The home network system includes: at least two electric devices (e.g., a first and a second electric device); and a network based on a predetermined network for networking the electric devices, wherein the first electric device sends a request message to the second electric device, and the second electric device sends a response message to the first electric device, wherein the response message transmitted from a lower layer to an upper layer of the second electric device is transmitted to a lower layer and then to an upper layer of the first electric device, and includes a command code included in the request message, for indicating an operation for the second electric device to execute, and a field related to an execution of the request.
Abstract:
A method of preparing 2-deoxy-L-ribose represented by the following formula I is disclosed. The preparation method includes the steps of: treating L-arabinose with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-L-arabinopyranose; allowing the prepared 1-alkoxy-L-arabinopyranose to react with acyl chloride so as to prepare 1-alkoxy-2,3,4-triacyl-L-arabinopyranose; brominating the alkoxy group of the prepared 1-alkoxy-2,3,4-triacyl-L-arabinopyranose to prepare a 1-bromo-2,3,4-triacyl compound; allowing the prepared compound to react with zinc in the presence of ethyl acetate and an organic base so as to prepare glycal; treating the glycal with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose; treating the prepared 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose with a base to prepare 1-alkoxy-2-deoxy-L-ribopyranose; and hydrolyzing the prepared 1-alkoxy-2-deoxy-L-ribopyranose in the presence of an acid catalyst.
Abstract:
A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.
Abstract:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
Abstract:
The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A sense line crosses both the active region and the device isolation layer, and a word line, spaced apart from the sense line, crosses both the active region and the device isolation layer.
Abstract:
In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.
Abstract:
The present invention discloses a data transmission and receiving method at a data link layer for use in a home network system based on a living network control protocol. The data receiving method at the data link layer of a protocol that consists of a physical layer, a data link layer, and an upper layer, includes the steps of: receiving data from the physical layer, storing the received data in a packet buffer, deciding whether new data has been received within a predetermined data allowable interval time since last data is received; and based on a result of the first decision, completing receiving the data.
Abstract:
A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.
Abstract:
The present invention discloses a remote controlling system for an electric device which can control operations of electric devices such as a washer and a dryer and display states thereof. The remote controlling system for the electric device includes one or more electric devices for communicating with a remote controlling device through a wireless communication network, transmitting state information to the remote controlling device according to a state request command from the remote controlling device, and controlling a predetermined operation according to an operation control command from the remote controlling device, and the remote controlling device supplied with power by a common power source, for transmitting the state request command to the electric device selected by the user, receiving the state information from the electric device, and displaying the state information, or transmitting the operation control command to the electric device.