摘要:
In a surface treatment for treating a surface of a subject of treating by a discharge-activated gas, under an atmospheric pressure or a pressure in the neighborhood of it, by arranging a second electrode at a position separated from the discharging section for generating said discharge-activated gas by a first electrode coated with a dielectric substance, and arranging a surface to be treated of a subject of treating between said plasma generating part, serving as a discharging section, and said second electrode, a surface treatment of said subject of treating is practiced.
摘要:
The invention provides a method of producing ultra-fine particles and an apparatus therefor. A particle carrier is moved in a chamber which is decompresed and charged with inert gas. An evaporable material is heated so as to deposit evaporated ultra-fine particles onto a part of the moving particle carrier. The deposited ultra-fine particles are collected from the part of the moving particle carrier while evaporated ultra-fine particles deposit onto another part of the moving particle carrier.
摘要:
A vapor source-holding container has an opening smaller than the evaporating area of the material held in the container and a wall portion in contact with the material and having an emissivity lower than the external surface of the wall portion not in contact with the material.
摘要:
A method of producing fine particles of a material by evaporating the material into an inert gas. The material is evaporated in a evaporation vessel and the fine particles are generated by cooling the evaporated material with the inert gas blown into the evaporated material from the evaporation vessel. The flow of the fine particles is restricted within a path from the evaporation vessel toward a deposit holding body by means of a scatter preventing wall around the path. The fine particles are deposited on the surface of the evaporation vessel and then receovered.
摘要:
A method of forming a thin layer on a substrate by vapor deposition wherein particles of the material to be constituted the thin layer are caused to fly in such a direction that they reach the surface of the substrate at substantially a right angle relative to the latter. The substrate is located opposite to a particle generating source. A shield device with a slit is provided in the proximity of the substrate located opposite to the particle generating source and between the substrate and the particle generating source so that they are introduced onto the surface of the substrate through the slit at substantially a right angle relative to the surface of the substrate.