Power conversion device
    11.
    发明授权
    Power conversion device 有权
    电源转换装置

    公开(公告)号:US08228700B2

    公开(公告)日:2012-07-24

    申请号:US12867866

    申请日:2009-07-30

    摘要: Connection portions (225UP through 225WP) to which upper arm control terminals (320UU through 320UW) are connected are disposed at a first edge portion of a drive circuit board (22). And connection portions (225UN through 225WN to which lower arm control terminals (320LU through 320LW) are connected are disposed at a second edge portion of the drive circuit board (22). Upper arm implementation regions (227UP through 227WP), lower arm implementation regions (227UN through 227WN), and a low voltage pattern region (228) in which photo-couplers (221U through 221W) are implemented are formed in the board region between these board edge portions. And signal wiring (40U) that transmits a control signal from a photo-coupler (221U) to an implementation region (227UN) is formed in a conductor layer that is a lower layer than the conductor layer in the lower arm implementation region in which the lower arm driver circuit is implemented.

    摘要翻译: 上臂控制端子(320UU至320UW)连接到的连接部分(225UP至225WP)设置在驱动电路板(22)的第一边缘部分。 并且在驱动电路基板(22)的第二边缘部分配置有与下臂控制端子(320LU〜320LW)连接的连接部(225UN〜225WN),上臂实施区域(227UP〜227WP),下臂实施区域 (227UN至227WN)和其中实现光耦合器(221U至221W)的低电压图案区域(228)形成在这些板边缘部分之间的板区域中,并且发送控制信号的信号布线(40U) 在作为下臂驱动电路的下臂实施区域中的导体层的下层的导体层中形成从光电耦合器(221U)到实现区域(227UN)的导体层。

    Power Converter Unit
    12.
    发明申请
    Power Converter Unit 审中-公开
    电源转换器单元

    公开(公告)号:US20090002974A1

    公开(公告)日:2009-01-01

    申请号:US12130455

    申请日:2008-05-30

    IPC分类号: H05K7/04

    摘要: A power converter unit has a metal case; a power module having a plurality of power semiconductor devices that is provided inside the metal case; a gate drive circuit board having a circuit for driving the plurality of the power semiconductor devices that is mounted on the power module; a voltage sensor that is mounted on the gate drive circuit board; a metal plate for electrically connecting the metal case with the gate drive circuit board; screws and soldered parts for fixing the metal plate to the gate drive circuit board; a first wiring that is set up on the gate drive circuit board for electrically connecting the voltage sensor with the soldered parts; and a second wiring that is set up on the gate drive circuit board for electrically connecting the screws and the soldered parts.

    摘要翻译: 电源转换器单元具有金属外壳; 功率模块,具有设置在所述金属壳体内的多个功率半导体装置; 门驱动电路板,具有用于驱动安装在功率模块上的多个功率半导体器件的电路; 安装在栅极驱动电路板上的电压传感器; 用于将金属壳体与栅极驱动电路板电连接的金属板; 螺钉和焊接部件,用于将金属板固定到栅极驱动电路板; 设置在栅极驱动电路板上用于将电压传感器与焊接部件电连接的第一布线; 以及第二布线,其设置在用于电连接螺钉和焊接部件的栅极驱动电路板上。

    Power Conversion Device
    14.
    发明申请
    Power Conversion Device 有权
    电源转换装置

    公开(公告)号:US20110199800A1

    公开(公告)日:2011-08-18

    申请号:US12867866

    申请日:2009-07-30

    IPC分类号: H02M7/53862

    摘要: Connection portions (225UP through 225WP) to which upper arm control terminals (320UU through 320UW) are connected are disposed at a first edge portion of a drive circuit board (22). And connection portions (225UN through 225WN to which lower arm control terminals (320LU through 320LW) are connected are disposed at a second edge portion of the drive circuit board (22). Upper arm implementation regions (227UP through 227WP), lower arm implementation regions (227UN through 227WN), and a low voltage pattern region (228) in which photo-couplers (221U through 221W) are implemented are formed in the board region between these board edge portions. And signal wiring (40U) that transmits a control signal from a photo-coupler (221U) to an implementation region (227UN) is formed in a conductor layer that is a lower layer than the conductor layer in the lower arm implementation region in which the lower arm driver circuit is implemented.

    摘要翻译: 上臂控制端子(320UU至320UW)连接到的连接部分(225UP至225WP)设置在驱动电路板(22)的第一边缘部分。 并且在驱动电路基板(22)的第二边缘部分配置有与下臂控制端子(320LU〜320LW)连接的连接部(225UN〜225WN),上臂实施区域(227UP〜227WP),下臂实施区域 (227UN至227WN)和其中实现光耦合器(221U至221W)的低电压图案区域(228)形成在这些板边缘部分之间的板区域中,并且发送控制信号的信号布线(40U) 在作为下臂驱动电路的下臂实施区域中的导体层的下层的导体层中形成从光电耦合器(221U)到实现区域(227UN)的导体层。